Photoluminescence and Raman study of porous silicon synthesized by visible and infrared laser etching

Estimation of Silicon Nanocrystalline Sizes from Photoluminescence Measurements of RF Co-Sputtered Si/SiO2 Films.

“…Several studies confirm the presence of nanocrystals (called "quantum dots", QD) or aggregates of nanocrystals in long structures ("quantum wires", QW) in luminescent specimens [6][7][8][9][10][11][12]. The evidence points at the existence of statistical distributions of nanocrystal sizes mainly because the process of production of the specimens is highly stochastic [13][14][15][16][17]. A model by John and Singh [13] proposes that the PL characteristics should be in accordance with such distribution of sizes, at least for nanocrystals non passivated on their surface with foreign species.…”

Photoluminescent studies on porous silicon/tin oxide heterostructures

“…The PSi samples prepared at current densities above and below 30 mA/cm 2 show PL spectra with asymmetric and overlapped peaks. It means that, in such PSi surface profile, there is the presence of a set of semi-isolated silicon nanocrystallites with different dimensions or shapes [12]. Each set of such silicon crys- tals consists of a narrow distribution of similar dimensions and contribute to one of the PL peaks in the broad PL spectra [13][14][15].…”

Porous Silicon Formation by Photoetching

“…A summary of PS formation by photoetching is presented in Tables 1 and 2 (Xu and Adachi Adachi and Kubota 2007;Tomioka et al 2007;Andersen et al 1995;Noguchi and Suemune 1993;Zhang et al 1993;Cheah and Choy 1994;Jones et al 1996;Kolasinski et al 2000;Takai 2000, 2001;Mavi et al 2001Mavi et al , 2006Marotti et al 2003;Cho et al 2006;Xu and Adachi 2008;Matsui and Adachi 2012;Zheng et al 2005;Adachi and Tomioka 2005).…”