Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe

Babentsov, V.; Boiko, Vitalii; Schepelskii, G.A.; James, R. B.; Franc, J.; Procházka, Jan; Hlı́dek, P.

doi:10.1016/j.jlumin.2010.03.006

Cited by 28 publications

(13 citation statements)

References 19 publications

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“…This transition has been associated with excitons bound to extended defects. [23][24][25][26] Based on the discussion of the Z-band above, we speculate that the radiative mechanism here is similar to the DAP mechanism for the Z-band. Finally, we mention that no "rainbow" coloration could be identified in the spectrum images for the CdCl 2 -treated sample.…”

Section: Resultssupporting

confidence: 51%

Explanation of red spectral shifts at CdTe grain boundaries

Moseley

Al‐Jassim

Moutinho

et al. 2013

Applied Physics Letters

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The best research-cell efficiencies for CdTe thin-film solar cells have recently increased from 17.3% to 20.4%. Despite these impressive recent gains, many improvements in device technology are necessary to reach the detailed-balance efficiency limit for CdTe-based (singlejunction, non-concentrator) solar cells of ~32%. Improvements will increasingly rely on knowledge of the fundamental relationships between processing, electrical properties of defects, and device performance. In this study, scanning electron microscope (SEM)-based cathodoluminescence (CL) spectrum imaging was used to examine these fundamental relationships. In CL spectrum imaging we collect a spectrum per pixel in a 256 × 256 pixel SEM image by synchronizing a cryogenic silicon charge-coupled device with the electron-beam positioning. High spatial resolution photon energy maps obtained with this technique can reveal intricate luminescence phenomena that are not apparent in spectroscopic data.

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Section: Resultssupporting

confidence: 51%

Explanation of red spectral shifts at CdTe grain boundaries

Moseley

Al‐Jassim

Moutinho

et al. 2013

Applied Physics Letters

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“…[3][4][5][6][7] Among various defects, dislocations are of particular interest in CdTe, as they have been experimentally observed to cause defect states within the band gap and show a strong correlation between their spatial distributions and substantial charge trapping in devices excited by X-rays. [7][8][9][10] However, as dislocations often are found decorated with impurities or Te-rich secondary phases (Te precipitates or inclusions) 5,7 , it is difficult to determine experimentally whether the charge carrier trapping is primarily due to the dislocations themselves or their decorating defects. Thus, theoretical calculations are necessary to elucidate the specific role of dislocations on carrier trapping in Cd(Zn)Te, separated from the decorating defects.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of atomic and electronic structures of60∘perfect and30∘/90∘partial glide dislocations in CdTe

2016

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The atomic and electronic structures of 60• glide perfect and 30• /90• glide partial dislocations in CdTe are studied using combined semi-empirical and density functional theory calculations. The calculations predict that the dislocation cores tend to undergo significant reconstructions along the dislocation lines from the singly-periodic (SP) structures, yielding either doubly-periodic (DP) ordering by forming a dimer or quadruplyperiodic (QP) ordering by alternating a dimer and a missing dimer. Charge modulation along the dislocation line, accompanied by the QP reconstruction for the Cd-/Te-core 60• perfect and 30• partials or the DP reconstruction for the Cd-core 90• partial, results in semiconducting character, as opposed to the metallic character of the SP dislocation cores. Dislocation-induced defect states for the 60• Cd-/Te-core are located relatively close to the band edges, whereas the defect states lie in the middle of the band gap for the 30• Cd-/Te-core partial dislocations. In addition to the intra-core charge modulation within each QP core, the possibility of inter-core charge transfer between two different dislocation cores when they are paired together in the same system is discussed. The analysis of the electronic structures reveals the potential role of the dislocations on charge transport in CdTe, particularly in terms of charge trapping and recombination.

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“…Earlier, we published results which concern experiments on the study deep and shallow energy levels introduced by dislocations in CdTe [4,5], in this work we communicate the results of investigation of "fresh" dislocations on the (100), (110), and (111) surfaces of the p-CdTe samples. These dislocations were introduced in CdTe by focused stress from the diamond indenter, and were studied with low temperature photoluminescence (PL) and chemical etching combined with the analysis of crystallographic orientation of the distributed dislocations.…”

Section: Introductionmentioning

confidence: 74%

Dislocation emission caused by different types of nanoscale deformation defects in CdTe

Babentsov¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of "fresh" dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by chemical etching and low temperature photoluminescence in a mapping regime. The crystallographic orientation of the dislocation rosettes of macroscopic plastic deformation lines was analyzed on the (100), (110), and (111) surfaces.

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Photoluminescence and electric spectroscopy of dislocation-induced electronic levels in semi-insulated CdTe and CdZnTe

Cited by 28 publications

References 19 publications

Explanation of red spectral shifts at CdTe grain boundaries

Explanation of red spectral shifts at CdTe grain boundaries

First-principles study of atomic and electronic structures of60∘perfect and30∘/90∘partial glide dislocations in CdTe

Dislocation emission caused by different types of nanoscale deformation defects in CdTe

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