Photoionization mass spectrometry of silane

Hydrogen mediated transport of Sn to Ru film surface

“…23,24 Stannanes are widely used in electronic devices in the initial step of chemical vapor deposition processes. 25,26 In addition to catalytic interest, Sn contamination of Rucoated optics for extreme ultraviolet ͑EUV͒ lithography may become a potential problem 27,28 since the introduction of new powerful Sn-based laser-produced plasma sources. Hydrogen being considered for EUV optics cleaning 21 may react with Sn to yield a volatile hydride, which, in turn, may subsequently dissociate on chemically active surfaces spreading contamination all over a lithography tool.…”

Size Effects on Cation Heats of Formation. III. Methyl and Ethyl Substitutions in Group IV XH4, X = C, Si, Ge, Sn, Pb

“…The heat of formation of the silane radical ion, Δ f H (SiH 4 + ) = 1096 kJ/mol, is derived from Δ f H (SiH 4 ) = 34.31 kJ/mol and the evaluated IE ad (SiH 4 ) = 11.00 ± 0.02 eV . Berkowitz et al observe a small PIMS signal for SiH 4 at 1127 Å (11.0 eV), and a TPES signal has been observed down to 1097 Å by Heinis et al A PIMS observation of an ion current onset at 11.02 eV was attributed to a SiH 2 + fragment ion by Börlin et al, but Berkowitz et al have given good counter arguments in favor of the parent ion SiH 4 + . Clarification is necessary since this is about 600 meV below the PES IE ad = 11.65 eV given by Lias et al…”

Gas‐Phase Ion Chemistry of Silicon‐Containing Molecules†This article is dedicated to Saul Patai.

“…This ion is one of the main products found upon ionization of SiH 4 . Besides generation via electron ionization (EI), SiH C can be generated in the dissociative charge transfer reaction of SiH 4 with small ions 11 An interesting study on the hypervalent silanium ions SiH 7 C has been carried out by Cao and coworkers 17 . These authors measured the infrared spectrum of 3 by vibrational predissociation spectroscopy.…”