2006
DOI: 10.1103/physrevlett.96.106601
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Photoinduced Transient Stark Spectroscopy in Organic Semiconductors: A Method for Charge Mobility Determination in the Picosecond Regime

Abstract: Subpicosecond photoinduced Stark spectroscopy experiments are carried out for measuring charge carrier mobility in organic semiconductors. The technique is demonstrated in state-of-art devices based on methanofullerene. The transient mobility of photogenerated charge carriers is measured in the picosecond time domain. Electric field dependent mobility is observed from the earliest time scales. In addition, two distinct transport regimes are revealed: a short-lived state, approximately 10 ps, of high mobility a… Show more

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Cited by 77 publications
(88 citation statements)
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“…If a Stark effect is caused by those charges, an EA contribution is seen in the TA data. In contrast to the case where a uniform electric field is externally applied across the bulk of the film using electrodes, 43,65,66 the Stark effect in the TA data depends on the local radial electric fields around free charges and the local electric dipoles around electron−hole pairs. It can be observed even if the overall macroscopic field cancels due to a random orientation of the electron−hole pairs in the BHJ (in particular for a quadratic dependence on the local field magnitude).…”
Section: Journal Of the American Chemical Societymentioning
confidence: 99%
“…If a Stark effect is caused by those charges, an EA contribution is seen in the TA data. In contrast to the case where a uniform electric field is externally applied across the bulk of the film using electrodes, 43,65,66 the Stark effect in the TA data depends on the local radial electric fields around free charges and the local electric dipoles around electron−hole pairs. It can be observed even if the overall macroscopic field cancels due to a random orientation of the electron−hole pairs in the BHJ (in particular for a quadratic dependence on the local field magnitude).…”
Section: Journal Of the American Chemical Societymentioning
confidence: 99%
“…on how the electron donor (typically a conjugated polymer) and the electron acceptor (typically a fullerene derivative) arrange from the nano-to the microscopic scale [1][2][3]. A particularly interesting model system is pBTTT (poly(2,5-bis(3-hexadecyl-thiophen-2-yl)thieno [3,2-b]thiophene) blended with PCBM ( [6,6]-phenyl C 60 butyric acid methyl ester), since the phase morphology can in this case be carefully controlled during solution processing [4,5]. We present here a relatively new technique, time-resolved electromodulated differential absorption (EDA) [6][7][8][9], applied to solar cell devices containing either neat pBTTT or a 1:1 (by weight) blend of pBTTT with PCBM.…”
Section: Introductionmentioning
confidence: 99%
“…A particularly interesting model system is pBTTT (poly(2,5-bis(3-hexadecyl-thiophen-2-yl)thieno [3,2-b]thiophene) blended with PCBM ( [6,6]-phenyl C 60 butyric acid methyl ester), since the phase morphology can in this case be carefully controlled during solution processing [4,5]. We present here a relatively new technique, time-resolved electromodulated differential absorption (EDA) [6][7][8][9], applied to solar cell devices containing either neat pBTTT or a 1:1 (by weight) blend of pBTTT with PCBM. In neat pBTTT, the polymer chains arrange into ordered lamellae, allowing high transistor mobility [10].…”
Section: Introductionmentioning
confidence: 99%
“…Results and discussion are an extension of a previous short paper, which was focused on mobility determination from the early time dynamics. 11 Our results suggest that geminate recombination is responsible for a loss of 40% of the initially photogenerated charges in the first 450 ps.…”
Section: Introductionmentioning
confidence: 67%
“…In PCBM we reported previously a quadratic dependence with the applied electric field characteristic of excitonic Stark shift. 11 In the second case, the signal depends on 1 as well as 2. In addition to EA, signatures from charge induced absorption ͑bands c 1 and c 2 ͒, are present at 1, as expected from the high rectification ratio of the J-V diode curve and the large charge injection achieved at positive bias ͑inset Fig.…”
Section: Resultsmentioning
confidence: 99%