2007
DOI: 10.1103/physrevb.76.104423
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Photoinduced phase separation inBi0.4Ca0.6MnO3thin films

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Cited by 9 publications
(11 citation statements)
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“…[34][35][36]The decreaseof particle size can reduce the migration time of photogenerated electrons (e -)and holes (h + ) from the interior to the surface of particles and is thus favorable for the decrease of their recombination efficiency. [37,38] For the BiOX nanosheets, the self-generated IEF along the c-axis improves the separation of photoinduced e -and h + [31,39]and accelerates the movements of e -alone the caxis, [8,13,39]which was considered as the reason for the photoactivity enhancement of BiOX nanosheets with increasing F (001) .…”
Section: 3thickness-dependence Of Photoactivitymentioning
confidence: 99%
“…[34][35][36]The decreaseof particle size can reduce the migration time of photogenerated electrons (e -)and holes (h + ) from the interior to the surface of particles and is thus favorable for the decrease of their recombination efficiency. [37,38] For the BiOX nanosheets, the self-generated IEF along the c-axis improves the separation of photoinduced e -and h + [31,39]and accelerates the movements of e -alone the caxis, [8,13,39]which was considered as the reason for the photoactivity enhancement of BiOX nanosheets with increasing F (001) .…”
Section: 3thickness-dependence Of Photoactivitymentioning
confidence: 99%
“…Since the lattice parameter of LAO, 3.79 Å, is slightly smaller than the lattice parameter of bulk Bi 0.4 Ca 0.6 MnO 3 , V 1/3 = 3.81 Å, thin films grown on LAO are under small compressive strain. 15 Compressive strain leads to the increase in the out-of-plane lattice parameters, since in-plane lattice parameters are stretched. The relaxation of strain, which could occur under annealing, should lead in this case to the decrease in the lattice parameters, which is not observed experimentally.…”
Section: A High Temperature Resistivity Changesmentioning
confidence: 99%
“…Insulator-to-metal transition in manganese oxides makes these materials attractive from the point of view of creating photonic and optoelectronic devices. 5,7,14,15 However, the origin of the photoinduced effects in manganites is not well understood at present. From this perspective, it is important to better understand the origin of the photoinduced effects and to be able to control the magnitude of photoinduced changes and their lifetime.…”
Section: Introductionmentioning
confidence: 99%
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“…Notably, the recovery process is complete in several seconds and much shorter than that had been reported on un-doped BSO thin lm, 23 which is mostly due to the high carrier density and mobility in BSO-H thin lm. 34,35 Secondly, the recovery process reects the carrier's dynamics of recombination, and the carrier transit time (s 1 ) and the excess life-time of trapped carriers (s 2 , s 2 > s 1 ) are well-known to be the main parts of the recovery time in oxide semiconductors. 36 Therefore, the experimental data should be well tted by a double exponential function 37 (see red solid lines in Fig.…”
mentioning
confidence: 99%