1992
DOI: 10.1063/1.462220
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Photoinduced dissociative electron attachment of CH3Br on Pt(111): The role of the local work function

Abstract: The photoinduced dissociative electron attachment of CH3Br on Pt(111) has been examined by measuring CH3 photofragment translational energy distributions from CH3Br adsorbed on Xe multilayers deposited upon CH3Br covered Pt(111). Subvacuum level, photoexcited substrate electrons produced by 308 nm laser irradiation were found to propagate through the Xe layer where attachment to CH3Br led to fragmentation. A simple model for surface dissociative electron attachment, DEA, was found to quantitatively predict the… Show more

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Cited by 38 publications
(24 citation statements)
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“…6: (i) The excitation mechanism generally observed in methyl halide molecules that are adsorbed on metal surfaces consists in the attachment of hot electrons, which have been excited from the metal valence band states, to the molecules leading to the formation of transient anions. However, these anion states are repulsive and hence the excitation leads to dissociation of the molecules liberating methyl radicals and halide ions (dissociative electron attachment, DEA [15,16]; see also excitation mechanism (1) in Fig. 6).…”
Section: Adsorption Of Chmentioning
confidence: 98%
See 1 more Smart Citation
“…6: (i) The excitation mechanism generally observed in methyl halide molecules that are adsorbed on metal surfaces consists in the attachment of hot electrons, which have been excited from the metal valence band states, to the molecules leading to the formation of transient anions. However, these anion states are repulsive and hence the excitation leads to dissociation of the molecules liberating methyl radicals and halide ions (dissociative electron attachment, DEA [15,16]; see also excitation mechanism (1) in Fig. 6).…”
Section: Adsorption Of Chmentioning
confidence: 98%
“…Whereas on insulating substrates like LiF [10,11] and MgO [12] direct photodissociation was found to prevail, dissociative electron attachment was discussed as predominant mechanism for methyl fragment generation on the surfaces of metals like aluminum [13], platinum [14][15][16], nickel [17], copper [11], and silver [18]. On the surface of the semiconductor GaAs the mechanism leading to dissociation could be tuned through the appropriate doping [19,20].…”
mentioning
confidence: 97%
“…Microscopic reversibility implies that an entrance channel barrier should be surmounted in the reverse reaction, methane dissociative adsorption. In the photochemical hydrogenation reaction, methyl radicals were produced with translational energies of up to 2 eV, 33 and the reactive trajectories may have sampled a portion of the reactive potential somewhat differently than in a thermal reaction. As a consequence, it was instructive to examine the thermal hydrogenation, CH 3 (ad) + H(ad) f CH 4 (g), by angle resolved thermal programmed reaction (TPR), where detailed balance should apply.…”
mentioning
confidence: 99%
“…This is contrary to w hat we would expect the top adsorbate layer com pletely covers th e underlayers. The decrease of hot electrons through increasing layers of adsorbed molecules has been noted in previous studies [37]. We would expect th a t as additional layers are added, th a t charge transfer would become a less effective process and more of the signal would result from direct photodissociation.…”
Section: I* Branching Ratio and Ct-pdismentioning
confidence: 95%
“…[37,17], and th e electron affinity of brom ine EAsr-is 3.36 eV [37,26]. Using a range of 0 to 4 quanta for the vibrational energy of th e CHz fragm ent and using equation 4.8 we find for gas phase CHzBv, th a t Tavaii ranges from 0.89 eV for v = 0 to 0.59 eV for v=4.…”
Section: Tavai = " Do + Eay---e % " "^ (48)mentioning
confidence: 99%