Photogating effects of HgTe nanoparticles on a single ZnO nanowire

Seong, Hojun; Cho, Kyoungah; Yun, Jae-Ho; Kwak, Kiyeol; Hyung, Jun Jin; Kim, Sangsig

doi:10.1016/j.solidstatesciences.2010.04.034

Cited by 4 publications

(6 citation statements)

References 28 publications

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“…Though photogating has been described as a phenomenon induced by trap states in many literatures, to the best of our knowledge, it has no precise definition . In this letter, we would like to discuss it in a wider universality.…”

Section: Introductionmentioning

confidence: 99%

“…[9,[29][30][31][32] Though photogating has been described as a phenomenon induced by trap states in many literatures, to the best of our knowledge, it has no precise definition. [29,31,[33][34][35][36][37][38][39][40] In this letter, we would like to discuss it in a wider universality. Literally, photogating is a way of modulating the device channel conductance with light-induced gate field or voltage.…”

Section: Introductionmentioning

confidence: 99%

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Photogating in Low Dimensional Photodetectors

2017

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Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth have attracted increasing research interests for electronic and optoelectronic devices in recent years. Photogating, which is usually observed in photodetectors based on low dimensional materials and their hybrid structures, is demonstrated to play an important role. Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states. This review first focuses on the gain of photogating and reveals the distinction from conventional photoconductive effect. The trap‐ and hybrid‐induced photogating including their origins, formations, and characteristics are subsequently discussed. Then, the recent progress on trap‐ and hybrid‐induced photogating in low dimensional photodetectors is elaborated. Though a high gain bandwidth product as high as 109 Hz is reported in several cases, a trade‐off between gain and bandwidth has to be made for this type of photogating. The general photogating is put forward according to another three reported studies very recently. General photogating may enable simultaneous high gain and high bandwidth, paving the way to explore novel high‐performance photodetectors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photogating in Low Dimensional Photodetectors

2017

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“…They make the point that although FET measurements are required for practical device demonstrations, they may only reflect the behavior of QDs in a shallow region of QDs close to the gate electrode and may be sensitive to unintentional impurity doping during fabrication, possibly explaining the strong exclusively p-type behavior seen in the earlier sintered film work. Following the earlier work on IR photoconductivity in HgTe QD films [89], Hojun et al [96], extended the IR photoresponse to 1300 nm and compared both lateral and vertical photoconductor device performances. The frequency response of both of these devices was limited to only 100-200 Hz even though the channel lengths were quite different (500 and 0.9 microns respectively).…”

Section: More Recent Optoelectronic and Electronic Hgte Devicesmentioning

confidence: 99%

“…This was attributed to only QDs in contact with the electrode structures contributing photogenerated carriers to the collected current. The same group subsequently fabricated pn junction devices with intersecting strips of sintered p-type HgTe QDs and n-type ZnO nanowires [97]. With a four electrode geometry (shown in Figure 11a,b) they probed the separate photoconductive responses of the sintered HgTe QD strip and ZnO nanowire and also the combined QD/nanowire junction response.…”

Section: More Recent Optoelectronic and Electronic Hgte Devicesmentioning

confidence: 99%

“…With a four electrode geometry (shown in Figure 11a,b) they probed the separate photoconductive responses of the sintered HgTe QD strip and ZnO nanowire and also the combined QD/nanowire junction response. In subsequent work they extended this idea by decorating a ZnO nanowire with HgTe QDs directly on the surface so that when illuminated at energies above the HgTe QD bandgap but below the ZnO bandgap the resulting QD photocharge on the outside of the nanowire reduced the width of the conduction channel along its axis giving rise to a photogating effect in the nanowire's photoconductive response [98]. From about 2006 onwards the Heiss group also turned their attention to HgTe photodetectors and in 2007 [99] reported the fabrication of HgTe QD pho- toconductive thin film detectors fabricated by inkjet printing from organic solvent (see Figure 11c).…”

Section: More Recent Optoelectronic and Electronic Hgte Devicesmentioning

confidence: 99%

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Infrared Emitting HgTe Quantum Dots and Their Waveguide and Optoelectronic Devices

Kershaw

Rogach

2014

Zeitschrift Für Physikalische Chemie

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Abstract:The development of the research into the synthesis and optoelectronic applications of HgTe and related quantum dots (QDs) is reviewed, from the early days when it was felt that it might be a useful replacement for rare earths in telecom optical amplifiers, through to its more recent and broader appeal as an IR photodetector technology. Appropriately the early investigation of the material sprang from a contact with Prof. Horst Weller and his group at Hamburg University. Though the problem of Auger recombination meant that it was not so easy to make telecom amplifiers and lasers as many had hoped, it has proved to have an extraordinarily broad bandgap tuning range and just recently this has resulted in the demonstration of photodetectors in the mid-to long-IR region operating at up to 12 μm wavelength. This impressive flexibility has led to interest in HgTe QDs and optoelectronic devices based on them to be as strong as ever and growing as the prospects for commercialization improve with every narrowing in the gap between the performance of present day epitaxial devices and QD-based technology. In a further satisfying and well timed twist, Prof. Weller's 60 th year has seen preliminary reports of extended gain lifetime in 'doped' HgTe QDs which may yet lead to a completing of the circle with the distinct possibility of electrically driven telecom wavelength lasers and amplifiers in the coming years. This review follows the development of the several synthetic methods to grow colloidal HgTe QDs, and their deployment in optoelectronic devices to the present.

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Giant enhancement in photoresponse via engineering of photo-induced charge (electron and hole) transfer in linear and non-linear devices

Manohar

Krupanidhi

2020

Sensors and Actuators A: Physical

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Photogating effects of HgTe nanoparticles on a single ZnO nanowire

Cited by 4 publications

References 28 publications

Photogating in Low Dimensional Photodetectors

Photogating in Low Dimensional Photodetectors

Infrared Emitting HgTe Quantum Dots and Their Waveguide and Optoelectronic Devices

Giant enhancement in photoresponse via engineering of photo-induced charge (electron and hole) transfer in linear and non-linear devices

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