Photogating carbon nanotube transistors

Marcus, Matthew S.; Simmons, Jason M.; Castellini, O. M.; Hamers, Robert J.; Eriksson, M. A.

doi:10.1063/1.2357413

Cited by 55 publications

(56 citation statements)

References 32 publications

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“…2. A few examples have appeared where charge traps in the underlying substrate can lead to photogating [37] , but such phenomena are difficult to control and implement in real applications.…”

Section: Cnt Phototransistorsmentioning

confidence: 99%

Uncooled Carbon Nanotube Photodetectors

Léonard

Kono

2015

Advanced Optical Materials

147

166

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Photodetectors play key roles in many applications such as remote sensing, night vision, reconnaissance, medical imaging, thermal imaging, and chemical detection. Several properties such as performance, reliability, ease of integration, cost, weight, and form factor are all important in determining the attributes of photodetectors for particular applications. While a number of materials have been used over the past several decades to address photodetection needs across the electromagnetic spectrum, the advent of nanomaterials opens new possibilities for photodetectors. In particular, carbon-based nanomaterials such as carbon nanotubes (CNTs) and graphene possess unique properties that have recently been explored for photodetectors. Here, we review the status of the field, presenting a broad coverage of the different types of photodetectors that have been realized with CNTs, placing particular emphasis on the types of mechanisms that govern their operation. We present a comparative summary of the main performance metrics for such detectors, and an outlook for performance improvements.2

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Section: Cnt Phototransistorsmentioning

confidence: 99%

Uncooled Carbon Nanotube Photodetectors

Léonard

Kono

2015

Advanced Optical Materials

147

166

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“…1 Generally, the traditional IR cameras are divided as thermal detector and photon detector, which are mostly depended on photoactive semiconductors with appropriate bandgaps. 2 For example, GaN, InGaAs, HgCdTe, InSb are typically utilized for near-IR, middle wave IR sensing. The detection scheme of IR photons relies on small bandgap of semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

Infrared light field imaging using single carbon nanotube detector

Chen

Zhou

et al. 2014

SPIE Proceedings

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The conventional photographs only record the sum total of light rays of each point on image plane so that they tell little about the amount of light traveling along individual rays. The focus and lens aberration problems have challenged photographers since the very beginning therefore light field photography was proposed to solve these problems. Lens array and multiple camera systems are used to capture 4D light rays, by reordering the different views of scene from multiple directions. The coded aperture is another method to encode the angular information in frequency domain.However, infrared light field sensing is still widely opening to research. In the paper, we will propose micro plane mirror optics together with compressive sensing algorithm to record light field in infrared spectrum. The micro mirror reflects objects irradiation and forms a virtual image behind the plane in which the mirror lies. The Digital Micromirror (DMD) consists of millions microscale mirrors which work as CCD array in the camera and it is controlled separately so as to project linear combination of object image onto lens. Coded aperture could be utilized to control angular resolution of infrared light rays. The carbon nanotube based infrared detector, which has ultra high signal to noise ratio and ultra fast responsibility, will sum up all image information on it without image distortion. Based on a number of measurements, compressive sensing algorithm was used to recover images from distinct angles, which could compute different views of scene to reconstruct infrared light field scence. Two innovative applications of full image recovery using nano scale photodetector and DMD based synthetic aperture photography will also be discussed in this paper.

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“…14,15 It is also suggested that the direct excitation through SWNTs does not significantly contribute to the photoconductivity to SWNT EFTs. Reference 16 has revealed that at a positive V g , where the Si band bending is not suitable for generating photovoltage, photo illumination on SWNT network FETs does not cause the increase in I d .…”

mentioning

confidence: 98%

Illumination-Enhanced Hysteresis of Transistors Based on Carbon Nanotube Networks

et al. 2009

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The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO 2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si-SiO 2 interface. We show that the hysteresis in SWNT transistors with a nearly trap-free Si backgate is thermally activated (activation energy E a ∼ 129-184 meV) in a dark ambient condition, and it is attributed to hole trappings at the SiO 2 surfaces proximate to SWNTs. Photon-illumination on the SWNT transistor devices with thin SiO 2 dielectrics (80 nm) results in the ON-current increase due to the effective gating from the photovoltage generated at the Si-SiO 2 interface. The light-induced simultaneous enhancement of ON-current and hysteresis suggests that the illumination-enhanced hysteresis is due to the photovoltageactivated hole trapping process on SiO 2 surfaces.Hysteresis between forward and reverse gate bias sweeps is usually observed in field-effect transistors (FETs) based on single-walled carbon nanotubes (SWNTs). This raises concerns of using SWNT FETs for electronic integrated circuits. These FETs are normally with SWNTs lying on a Si backgate (SiO 2 on doped Si). Therefore, the hysteresis is reasonably related to the mobile charges or traps in the gate structures. 1-3 Other studies have suggested that the charges injected from SWNTs into the surrounding dielectrics contribute to the hysteresis. [4][5][6] The surface bound-water layer has also been suggested to act as a charge trap or mediator. 7 However, several recent studies have raised questions on the role of water layers. 8,9 Instead, the hysteresis has been suggested to involve surface silanol groups as the major sources of charge screening. 9 Although the origin of the hysteresis in SWNT FETs is still under debate, the charge exchange between SWNTs and their surroundings is believed to be the root cause.In this contribution, we study the hysteretic behaviors of transfer characteristics (drain current I d vs gate voltage V g ) for SWNT FETs lying on a nearly trap-free backgate substrate (80 nm SiO 2 on Si) to exclude the hysteresis contributing from the underlying backgate. The hysteresis observed in the dark is thermally activated and with the extracted activation energy (E a ) ∼ 129-184 meV, indicating that the charge trapping/detrapping process is involved. We attribute the corresponding negative shift of threshold voltage (V th ) to the electric field (negative V g )-driven hole trapping at SiO 2 surfaces proximate to SWNTs, as suggested by Lee et al. 9 Interestingly, the photon illumination on the SWNT transistors results in the simultaneous enhancement of ON-current and hysteresis. These results suggest that the illumination-enhanced hysteresis is due to the photovoltageactivated hole-trapping process on SiO 2 surfaces. Moreover, the pronounced changes in electrical characteristics upon light exposure postulate a sensitive strategy for light detection.In our experiments, the typical SWNT FETs were fabri...

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Photogating carbon nanotube transistors

Cited by 55 publications

References 32 publications

Uncooled Carbon Nanotube Photodetectors

Uncooled Carbon Nanotube Photodetectors

Infrared light field imaging using single carbon nanotube detector

Illumination-Enhanced Hysteresis of Transistors Based on Carbon Nanotube Networks

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