Abstract:In this work, we revisit the DFT-based results for the electron-phonon scattering in highly excited silicon. Using state-of-the-art ab initio methods, we examine the main scattering channels which contribute to the total electron-phonon scattering rate and to the energy loss rate of photoexcited electrons in silicon as well as their temperature dependence. Both temperature dependence and the main scattering channels are shown to strongly differ for the total electron-phonon scattering rate and for the energy l… Show more
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