Photoetching of Si(111)-(7 × 7) studied by STM

Room-temperature chemisorption and thermal evolution of perchloroethylene and trichloroethylene on Si(111)7×7: Formation of chlorinated vinylene and vinylidene and acetylide adspecies, and thermal etching reactions

“…Trans-dichloroethylene and TCE have also been used as a Cl source to reduce metal contamination during Si oxidation [2,3]. Chlorinated hydrocarbons also attract a lot of attention not only as common industrial solvents but also as potential precursors in photochemical etching of semiconductor surfaces [4][5][6][7]. Although the binding and surface chemistry of halobenzenes on Si single-crystal surfaces have been investigated [6][7][8][9], not much is known about the basic interactions of halogenated derivatives of the simplest unsaturated hydrocarbon (halogenated ethylenes) with the Si surface.…”

“…Chlorinated hydrocarbons also attract a lot of attention not only as common industrial solvents but also as potential precursors in photochemical etching of semiconductor surfaces [4][5][6][7]. Although the binding and surface chemistry of halobenzenes on Si single-crystal surfaces have been investigated [6][7][8][9], not much is known about the basic interactions of halogenated derivatives of the simplest unsaturated hydrocarbon (halogenated ethylenes) with the Si surface. Recently, our group has started a series of systematic studies of surface chemical processes of the halogenated ethylenes on Si(1 1 1) and Si(1 0 0) surfaces by using vibrational electron energy loss spectroscopy (EELS) [10], X-ray photoelectron spectroscopy (XPS) [11], and thermal desorption spectrometry (TDS).…”

Materials Modification by Electronic Excitation

“…SPM observations of the Si (1 1 1) 7 Â 7 surface irradiated with 193 nm lasers [14] show vacancies in the 7 Â 7 reconstructed structure generated without disturbing the remaining atoms. The number of removed atoms increased linearly with¯uence (as for an excitonic mechanism), with cross-section 0X52 Â 10 À6 A 2 for the clean surfaces and 1X8Â 10 À6 A 2 for chlorinated surfaces, independent of temperature from room temperature to 10008C.…”

“…2.3 eV laser pulses only create defects on surfaces of GaAs (1 1 0) if the surfaces are already damaged by electron irradiation [16]. For Si (1 1 1) 7 Â 7 surface, the removal rate of atoms neighbouring a vacancy is 10 2 higher than those on undamaged reconstructed surface [14]. A monolayer of Si (1 1 0) 2 Â 1 can be removed by 2.3 eV laser irradiation leaving unreconstructed surfaces resistive to laser irradiation of the same¯uence [20,21].…”

Laser Precision Microfabrication

“…Although substantial effort concerning photo-excited processes and LDE of semiconductors has been documented in the literature [32][33][34][35][36][37][38][39][40][41][42][43][44] it remains to be seen whether this method would find its niche in commercial applications. Examples of successful implementation of the LDE technology for device applications include fabrication of InAlAs/InGaAs high-electron-mobility transistors [45], integrated InP microlenses [46] and GaAs/AlGaAs multiple quantum well circular ring lasers [47].…”