Photoerasable Organic Field-Effect Transistor Memory Based on a One-Step Solution-Processed Hybrid Floating Gate Layer

Li, Qingyan; Li, Tengteng; Zhang, Yating; Chen, Zhiliang; Li, Yifan; Jin, Lufan; Zhao, Hongliang; Li, Jie; Yao, Jianquan

doi:10.1021/acs.jpcc.0c06880

Cited by 27 publications

(23 citation statements)

References 52 publications

(187 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Heavily doped n-type Si wafers with 300 nm-thick SiO 2 substrates (Si/SiO 2 , Sibranch International Trading Co., Ltd) were cleaned by conventional steps according to a previous report . A 45 nm-thick pentacene (Sigma-Aldrich) was thermally evaporated on Si/SiO 2 substrates with a deposition rate of 0.2 Å/s under 3.0 × 10 –4 Pa.…”

Section: Methodsmentioning

confidence: 99%

“…The sandwich structure is widely used in resistive random access memory due to its simple preparation process and excellent memory performance; − however, there are few reports on HFGMs with a sandwich structure. In our previous work, the memory window was limited by the optimal mixing ratio of the charge-trapping material to the polymer . Here, a HFGM with a large memory window is demonstrated by sandwiching the PCBM@PS hybrid floating gate between two layers of pentacene.…”

Section: Introductionmentioning

confidence: 98%

“…] ,− in the same solvent. For HFGMs, the memory window can be increased by increasing the blending ratio of the charge-trapping material in the host organic polymer. − Nevertheless, an excessive mixing ratio may increase the chance of contact between the charge-trapping materials and between the charge-trapping layer and semiconductor channel layer, resulting in lateral and vertical leakage of the trapped charges. , …”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Hybrid Floating Gate Memory with a Large Memory Window Based on the Sandwich Structure

Zhang

et al. 2021

J. Phys. Chem. C

Self Cite

View full text Add to dashboard Cite

Hybrid floating gate memories (HFGMs) based on organic field-effect transistors have been extensively investigated owing to their remarkable charge trapping performance, good compatibility with integrated circuit, and simple solution preparation process. Here, a high-performance HFGM with a large memory window is demonstrated by sandwiching a [6,6]-phenyl-C61-butyric acid methyl ester@polystyrene hybrid floating gate between two layers of pentacene. A series of programming operations with different voltages and time prove the enhanced effect of the sandwich structure on the memory window. The memory window is enlarged by up to 347% under different programming operations. Compared to the memory device without the sandwich structure, the new memory device also presents admirable endurance and retention characteristics in 600 continuous erasing–reading–programing–reading cycling and data retention tests. Thus, the HFGM with the sandwich structure provides a feasible path to develop high-performance memory devices with a large memory window, which is beneficial for practical application and popularization.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Hybrid Floating Gate Memory with a Large Memory Window Based on the Sandwich Structure

Zhang

et al. 2021

J. Phys. Chem. C

Self Cite

View full text Add to dashboard Cite

show abstract

“…Because of the presence of the charge blocking and charge tunneling layers, the charge trapped in the floating gate is non-volatile. This permits the realization of effective charge storage that causes the threshold voltage to change, enabling the adjustment of the channel conductivity and the modulation of the SW. [167][168][169][170] In addition, the number of trapped charges can be regulated through the application of gate voltage pulses, and the channel conductivity. Thus, the SW can be controlled.…”

Section: Fo-fgstsmentioning

confidence: 99%

Recent Advances in Flexible Organic Synaptic Transistors

Liu

Huang

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

organic electronic devices have attracted substantial attention. [18][19][20][21][22][23][24] However, many issues still exist. For instance, the flexible substrates can be easily bent and thus cause damage to the devices or affect their electrical performance. Moreover, the flexible substrates are sensitive to operating conditions and are unstable during longterm operation. [25][26][27][28][29] Therefore, many research groups have dedicated their efforts to study and improve the flexibility and stretchability of organic electronic devices. [30][31][32][33] In recent years, organic three-terminal synaptic transistors have evolved from two-terminal devices to avoid the problem of crosstalk between adjacent cells. [34] This is an evolutionary structural design to improve the function of organic synaptic devices. In addition, the organic three-terminal synaptic transistors can be designed to form a highly interconnected neural network system. [35] At the same time, the organic three-terminal synaptic transistors can concurrently receive and read stimuli, which is conducive to the design of multiple input devices. [36] Currently, the threeterminal artificial synapses devices based on flexible organic transistors are considered to be the representative structures of biomimetic devices, which can be used to simulate the plasticity of biological synapses. [37,38] Compared with the traditional inorganic synaptic devices, the flexible organic synaptic transistors (FOSTs) can be used to simulate the plasticity of the human brain with a simpler structure and lower manufacturing cost. Therefore, a FOST is a promising component of future organic neuromorphic systems. [39][40][41][42][43][44][45][46] To date, the FOSTs have been widely used in wearable electronic devices and intelligent e-skins. [47][48][49] In 2018, a flexible artificial afferent nerve was reported by Xu et al. [47] representing significant progress toward the development of intelligent e-skin and soft robotics. This paper reviews the recent progress in the development of FOSTs and their applications in neuromorphic systems. Generally, the FOSTs are divided into four categories: flexible organic floating-gate synaptic transistors (FO-FGSTs), flexible organic ferroelectric-gate synaptic transistors (FO-FeGSTs), flexible organic electrolyte-gate synaptic transistors (FO-EGSTs), and flexible organic optoelectronic synaptic transistors (FO-OSTs). First, a brief introduction of the device structure mostly used in the FOSTs is provided. Then, the selection of substrate materials, gate dielectric materials, organic channel materials, and electrode materials in the FOSTs is summarized. Next, the major advances of these FOSTs and their potential applications are reviewed and discussed. Lastly, the summary, outlook, and In recent years, flexible organic synaptic transistors have attracted considerable attention due to their flexibility, biocompatibility, easy processability, and reduced complexity. Flexible organic synaptic transistors have functions and structures sim...

show abstract

“…[16][17][18] Among them, floating gate dielectrics provide the best performance in the discrete localization of photogating materials, which are shown to be a promising candidate to bistably store charges for extended periods without a power supply.The advantages of ultrafast light signal response and the wide bandwidth optical spectrum make photonic FET memory efficacious in photoassisted information recording, image sensing, and capturing. Many floating gate materials have been proposed, including polymer-perovskite (PVSK) hybrid composites, [19][20][21] conjugated polymer blends, [22][23][24] and conjugated block copolymers. [25] The prime factors in evaluating the performance of a photonic memory device using a floating gate electret include i) the uniform dispersion of photogating material among the polymer medium and ii) compatible energy level alignments between the photogating material, insulating medium and channel material.…”

mentioning

confidence: 99%

Volatility Transition from Short‐Term to Long‐Term Photonic Transistor Memory by Using Smectic Liquid Crystalline Molecules as a Floating Gate

Hung

Chiang

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

electrical/optical coupled programming for diversified and efficient multibit data storage. [5][6][7][8] The electrets in FET memory can be divided into three categories: i) floating gate dielectrics, [9][10][11] ii) polymeric electrets, [12][13][14][15] and iii) ferroelectric materials. [16][17][18] Among them, floating gate dielectrics provide the best performance in the discrete localization of photogating materials, which are shown to be a promising candidate to bistably store charges for extended periods without a power supply.The advantages of ultrafast light signal response and the wide bandwidth optical spectrum make photonic FET memory efficacious in photoassisted information recording, image sensing, and capturing. Many floating gate materials have been proposed, including polymer-perovskite (PVSK) hybrid composites, [19][20][21] conjugated polymer blends, [22][23][24] and conjugated block copolymers. [25] The prime factors in evaluating the performance of a photonic memory device using a floating gate electret include i) the uniform dispersion of photogating material among the polymer medium and ii) compatible energy level alignments between the photogating material, insulating medium and channel material. However, polymer composites or blends suffer from poor processability and dispersion. In addition, polymer−PVSK hybrids are confined by less selective and adaptive energy levels and low ambient stability. Our group proposed a type of floating gate with conjugated rod−coil molecules, showing a fast photoresponse, a high current contrast between "photo−ON" and "electrical−OFF" bistable states over 10 5 , and an extremely low programming driving force of 0.1 V. [26,27] The high performance of the photonic FET memory with conjugated rod-coil molecules as electrets can be attributed to the low energy barrier between the memory layer and the channel layer and the trapped charges being effectively blocked in the electret by the ordered end-on orientation. In addition, the conjugated rod−coil molecules exceled in preventing packing frustration that usually occur in polymeric electrets, which significantly deteriorated the homogeneity and yield of the memory device. [28] Highly crystalline molecules with superior charge carrier mobility can be obtained by a single-crystal formation process [29] Rod-like molecules with liquid crystalline phase transitions show highly ordered stacking and orientation, which is promising as the floating gate electret in highperformance photonic field-effect transistor (FET) memory. In this work, a series of rod-like molecules, alkyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C n -DNTT), are investigated with a smectic liquid crystalline phase transition. The photonic FET memory featuring these rod-like molecules is correlated with their morphology and crystallographic properties. A volatility transition from short−term to long−term memory behavior is found by utilizing the smectic liquid crystalline phase transitions (SmX, X = H, K, E) to orient the stacking in the floating...

show abstract

Photoerasable Organic Field-Effect Transistor Memory Based on a One-Step Solution-Processed Hybrid Floating Gate Layer

Cited by 27 publications

References 52 publications

Hybrid Floating Gate Memory with a Large Memory Window Based on the Sandwich Structure

Hybrid Floating Gate Memory with a Large Memory Window Based on the Sandwich Structure

Recent Advances in Flexible Organic Synaptic Transistors

Volatility Transition from Short‐Term to Long‐Term Photonic Transistor Memory by Using Smectic Liquid Crystalline Molecules as a Floating Gate

Contact Info

Product

Resources

About