Photoemission studies of the band structures of transition metal dichalcogenides. II. Groups VA and VIA

Shepherd, F. R.; Williams, Philippa

doi:10.1088/0022-3719/7/23/029

Cited by 60 publications

(16 citation statements)

References 18 publications

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“…The electronic characteristics of TMDCs range from metal to semiconductor [14,15,[25][26][27]. Many TMDCs' electronic band structures have been theoretically investigated through the use of several modeling techniques.…”

Section: Electronic Band Structure: Optical and Optoelectronic Propermentioning

confidence: 99%

“…From the 1970s to the present, ab initio and first principles calculations using density functional theory (DFT) with different approximations (e.g., local density approximations (LDA)) were made and widely used [30][31][32][33][34][35][36][37][38][39][40]. These models were guided by a variety of spectroscopic tools [14,18,24,27,[41][42][43][44][45][46][47][48][49][50]. Recently, MoS2 has been of particular interest.…”

Section: Electronic Band Structure: Optical and Optoelectronic Propermentioning

confidence: 99%

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Recent Advancement on the Optical Properties of Two-Dimensional Molybdenum Disulfide (MoS2) Thin Films

et al. 2015

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Abstract:The emergence of two-dimensional (2D) materials has led to tremendous interest in the study of graphene and a series of mono-and few-layered transition metal dichalcogenides (TMDCs). Among these TMDCs, the study of molybdenum disulfide (MoS2) has gained increasing attention due to its promising optical, electronic, and optoelectronic properties. Of particular interest is the indirect to direct band-gap transition from bulk and few-layered structures to mono-layered MoS2, respectively. In this review, the study of these properties is summarized. The use of Raman and Photoluminescence (PL) spectroscopy of MoS2 has become a reliable technique for differentiating the number of molecular layers in 2D MoS2.

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Section: Electronic Band Structure: Optical and Optoelectronic Propermentioning

confidence: 99%

Section: Electronic Band Structure: Optical and Optoelectronic Propermentioning

confidence: 99%

Recent Advancement on the Optical Properties of Two-Dimensional Molybdenum Disulfide (MoS2) Thin Films

et al. 2015

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“…The comparison with other data in this table shows that this method gives results in good agreement with findings of other authors and methods. It should be mentioned that numerous photoemission experiments (29)(30)(31)(32)(33)(34) indicated that the valence band maximum lies about 1 eV under the Fermi level on the energy scale in n-type semiconductors. This supports our conclusion that the electrochemicall effective bandgaps are substantially smaller (Table I) than has been assumed up to now on the basis of energy conversion efficiency measurements (kg's in Fig.…”

Section: Energye [Ev]mentioning

confidence: 99%

The Role of Carrier Diffusion and Indirect Optical Transitions in the Photoelectrochemical Behavior of Layer Type d‐Band Semiconductors

Kautek

Gerischer

Tributsch

1980

J. Electrochem. Soc.

131

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Photocurrents at n‐type single crystals of MoS2 , MoSe2 , and WSe2 , with the van der Waals surfaces exposed to the electrolyte, have been studied by varying the voltage applied and the wavelength of the light. The experiments have been performed under conditions where a depletion layer is formed beneath the semiconductor surface and in the presence of I−‐ions in the electrolyte which act as scavengers for the photogenerated holes and prevent corrosion of the electrodes. An evaluation of the quantum yield in relation to the absorption coefficient and the extension of the space charge layer shows that generation of minority carriers outside the space charge layer contributes to a large extent to the photocurrents. A mean diffusion length for holes of 1.4×10−4 normalcm false(MoS2false) and 5×10−4 normalcm false(MoSe2false) is derived from the experiments. The wavelength dependence of the photocurrent yield is analyzed in terms of light absorption for indirect transitions. This gives a measure of the bandgaps in these materials which turn out as 1.17 eV false(MoS2false) , 1.06 eV false(MoSe2false) , and 1.16 eV false(WSe2false) in good accordance with optical measurements.

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“…Single crystals allow the study of well-characterized sur xces to permit comparison to polycrystalline lubricant films that typically have many defects. Historically, the first of these PES studies used conventional ultraviolet (UV) sources such as DC discharge lamps using H 2 , He, and Ne gases as well as Mg and Al X-ray sources [30][31][32]. More recent work has employed synchrotron radiation to aid in spectral assignments [33][34][35][36].…”

Section: Spectroscopic Studiesmentioning

confidence: 99%

Applications of Surface Science to Solid Lubricants

Didziulis¹,

Fleischauer²

1993

Surface Diagnostics in Tribology

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Photoemission studies of the band structures of transition metal dichalcogenides. II. Groups VA and VIA

Cited by 60 publications

References 18 publications

Recent Advancement on the Optical Properties of Two-Dimensional Molybdenum Disulfide (MoS2) Thin Films

Recent Advancement on the Optical Properties of Two-Dimensional Molybdenum Disulfide (MoS2) Thin Films

The Role of Carrier Diffusion and Indirect Optical Transitions in the Photoelectrochemical Behavior of Layer Type d‐Band Semiconductors

Applications of Surface Science to Solid Lubricants

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