Photoemission Studies of Interface Barrier Energies of Irradiated Mos Structures

Peel, J. L.; Kjar, R. A.; Eden, R.C.

doi:10.1063/1.1653240

Cited by 12 publications

(1 citation statement)

References 7 publications

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“…First there is a trap level 1.5 eV below the con- duction band in Si02 that can be annealed out; electrons are injected into this level with the unannealed samples and have sufficient mobility to travel along this trap level through the sample. It should be noted that trap levels (18) 2.0 eV below the conduction band have been reported and that irradiation has changed barrier heights at Si-SiO2 and Cr-SiO2 interfaces (23). In the second model, unannealed charge trapped in the bulk varies the potential distribution within the oxide resulting in a nonlinear potential vs. distance profile thereby altering the shape of the tunneling barrier.…”

Section: Resultsmentioning

confidence: 99%

Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on Silicon

Osburn

Weitzman

1972

J. Electrochem. Soc.

142

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Conduction through SiO2 films, thermally grown on Si substrates, was found to take place via a Fowler‐Nordheim (F‐N) tunneling mechanism, after an initial transient current associated with trapping of charge, mobile ions, and space charge redistribution has died away. The temperature dependence of the steady‐state F‐N current decreases with increasing applied field and was found to be smaller in magnitude than previously reported. Typical post‐metalization annealing treatments (e.g., 5 min at 500°C in dry N2) lowers the conductivity of the MOS capacitor structures by two to three orders of magnitude, an effect that can be attributed to the elimination of either traps or fixed charge distributed throughout the oxide. For applied fields larger than 8 MV/cm, a current instability arises which can lead to dielectric breakdown. For a wide range of different electrode materials, the onset of this instability appears to correlate well with the temperature and oxide thickness dependences of breakdown, as observed earlier (10). These findings are discussed in terms of a model which suggests that carriers can be generated and redistributed by collision ionization processes within the oxide.

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Section: Resultsmentioning

confidence: 99%

Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on Silicon

Osburn

Weitzman

1972

J. Electrochem. Soc.

142

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Photoemission studies at RT of X-irradiated MOS structures

Kreutz

1972

Phys. Stat. Sol. (a)

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At room temperature changes of drain current and of transfer characteristics have been measured during illumination with visible and UV light in commercially available Si‐n‐channel MOSFET's. The threshold energies of the excitation mechanisms causing positive and negative changes of drain current have been determined by a photoelectric technique. Electron excitation from the Si conduction as well as from valence band into the overlying SiO2 and discharging of oxide traps are responsible for negative and positive drain current changes. The photoelectric threshold energies are characteristically influenced by X‐irradiation depending on the sign of the radiation induced drain current changes. The results are compared with the different concepts involved in the generation of defects in SiO2.

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Radiation Damage

Agajanian¹

1976

Semiconducting Devices

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Photoemission Studies of Interface Barrier Energies of Irradiated Mos Structures

Cited by 12 publications

References 7 publications

Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on Silicon

Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on Silicon

Photoemission studies at RT of X-irradiated MOS structures

Radiation Damage

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