Photoemission microscopy for surface states of copper measured at different photoelectron energies

The contrast of a photoelectron microscopy image depends on the type of excitation photon source and the photoelectron kinetic energy. The contrast inversion observed in the photoelectron image by Hg lamp excitation is due to differences in work functions specific to materials and surface conditions, and the contrast inversion in the case of vacuum ultraviolet light excitation is due to the difference in the valence band density of states. The mechanism of contrast formation in valence photoelectron images is well understood qualitatively as described above, but quantitative evaluations are required for accurate understanding. We investigated the photoelectron image contrast of gold checkerboard pattern printed on the silicon wafer. The intensity of the gold region near the Fermi level is higher than that of the silicon substrate region, while the inverted contrast images were obtained at lower kinetic energies. We found that in the case of core and valence photoelectrons, certain contamination degrades the image quality, but in the case of Hg lamp excitation, it increases signal intensity owing to the lowering of work function.

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Electron Beams Applied to Material Science

Shudo

2020

Vac. Surf. Sci.

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Generation and analysis of electron beams are of great use still today to elucidate electronic and microscopic features of solid materials. Some interesting methods, in terms of visualization of physical property at the sub-micrometer-scale structures, are addressed from researchers' view point in the fields of material science and technology. Readers will conceive something new in the introduced articles that appear in this special issue of the journal.

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Photoemission microscopy for surface states of copper measured at different photoelectron energies

Cited by 3 publications

References 13 publications

Energy level alignment of blended organic semiconductors and electrodes at the interface

Energy level alignment of blended organic semiconductors and electrodes at the interface

Contrast Inversion of Photoelectron Spectro-microscopy Image

Electron Beams Applied to Material Science

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