1995
DOI: 10.1143/jjap.34.1070
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Photoellipsometric Determination of Built-In Electric Field in δ-Doped GaAs

Abstract: The analytical form of the emission probability produced by the interaction of an ultracold three-level atom with an electromagnetic bimodal cavity field with multi-photon transitions of the atoms (multi-photon mazer) is analysed in the framework of the dressed-state formalism, but is distinguished from other treatments by the inclusion of the spatial variation along the cavity axis. In particular, the cavity field mode profile is considered by using the mesamode function and differences in the collapse-reviva… Show more

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