Photoelectronic properties and devices of 2D Xenes

Li, Shiqi; Huang, Guoyi; Jia, Yiding; Wang, Bing; Wang, Hongcheng; Zhang, Han

doi:10.1016/j.jmst.2022.02.038

Cited by 17 publications

(4 citation statements)

References 193 publications

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“…It is well-known that the application of strain is a common tool in bandgap engineering for 2D materials. − Here, the variation in the electronic structure of ML-TiPtGe was observed by applying in-plane strain, both uniaxial and biaxial strains were considered. To apply the uniaxial strain, a supercell of 1 × 3 was constructed based on a unit cell; see the area in the red rectangle marked in Figure a.…”

Section: Resultsmentioning

confidence: 99%

Atomically Thin Semiconductor TiPtGe and Heterostructure of β-Antimonene/TiPtGe: A First-Principles Study

Liu

Wang

et al. 2023

J. Phys. Chem. C

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Half-Heusler intermetallic compounds have been an important subject of interest in the field of semiconductors for years, but have been studied more for their bulk structure and rarely for their two-dimensional structure. Here, a novel two-dimensional semiconductor material with the chemical formula TiPtGe and an indirect bandgap of 1.27 eV has been developed on the basis of first-principles calculations. Significantly, it could be transformed from an indirect to a direct bandgap semiconductor under small biaxial in-plane strain. Given the similar lattice parameters and symmetry with the single-element two-dimensional material antimonene, we have attempted to form a vertical heterostructure of the two. The calculated results show that the heterostructure can be transformed from an indirect to a direct bandgap by increasing the number of TiPtGe layers. Further calculated results of the optical properties show that increasing the number of TiPtGe layers in the heterostructure could significantly improve the absorption efficiency in the visible region. This provides a new possibility for the application of antimonene in optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Atomically Thin Semiconductor TiPtGe and Heterostructure of β-Antimonene/TiPtGe: A First-Principles Study

Liu

Wang

et al. 2023

J. Phys. Chem. C

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“…On the basis of previous research work, 2D materials have made some significant breakthroughs in various fields in the past five years, for example, enhanced internal polarization field in MXenes for regulating photocatalytic water decomposition . At the same time, potential application scenarios for 2D materials were proposed, such as the promising 2D Janus X 2 PAs (X = Si, Ge, and Sn) photocatalyst .…”

Section: Introductionmentioning

confidence: 99%

Intrinsic Coupling between Piezoelectric and Electronic Transport Properties in Janus γ-GeSnXO (X = S, Se) Monolayers with Vertical Piezoelectricity

Zhang,

Shang,

et al. 2024

ACS Appl. Nano Mater.

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Due to their properties and potential applications, two-dimensional (2D) materials have shown enormous advantages in electronic and piezoelectric devices. Unfortunately, few 2D materials have both higher piezoelectric effects and better mechanical durability. We predict the Janus γ-GeSnXO (X = S, Se) monolayer with practicable piezoelectric property and good mechanical durability based on density functional theory. The dynamic, thermodynamic, and mechanical stability results can prove it. In addition, the piezoelectric coefficient d 33 is 1 to 2 orders of magnitude higher than that of the same type of piezoelectric material. The calculation results meet the law of the electronegativity difference ratio. The piezoelectric performance increases with the increase of the electronegativity difference ratio. Furthermore, there is an intrinsic coupling mechanism between piezoelectric and electronic transport properties in this work, where a smaller polarization electric field is accompanied by a larger carrier mobility. This research establishes a practical foundation to address the requirements of diverse piezoelectric nanodevices.

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“…Through the collaborative endeavors of scientists, numerous single-element two-dimensional materials have been successfully synthesized: borophene, gallenene, thallene, silicene, germanene, stanene, plumbene, phosphorene, arsenene, antimonene, bismuthene, selenene and tellurene [11,12]. Extensive research is dedicated to exploring the exceptional properties of 2D materials and their potential in revolutionizing device design with novel operating principles [13][14][15][16][17][18][19][20]. Particular attention is paid to graphene's closest neighbors in group 14-silicene and germanene.…”

Section: Introductionmentioning

confidence: 99%

RHEED Study of the Epitaxial Growth of Silicon and Germanium on Highly Oriented Pyrolytic Graphite

Lozovoy,

Dirko,

Kukenov

et al. 2024

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Two-dimensional silicon (silicene) and germanium (germanene) have attracted special attention from researchers in recent years. At the same time, highly oriented pyrolytic graphite (HOPG) and graphene are some of the promising substrates for growing silicene and germanene. However, to date, the processes occurring during the epitaxial growth of silicon and germanium on the surface of such substrates have been poorly studied. In this work, the epitaxial growth of silicon and germanium is studied directly during the process of the molecular beam epitaxy deposition of material onto the HOPG surface by reflection high-energy electron diffraction (RHEED). In addition, the obtained samples are studied by Raman spectroscopy and scanning electron microscopy. A wide range of deposition temperatures from 100 to 800 °C is considered and temperature intervals are determined for various growth modes of silicon and germanium on HOPG. Conditions for amorphous and polycrystalline growth are distinguished. Diffraction spots corresponding to the lattice constants of silicene and germanene are identified that may indicate the presence of areas of graphene-like 2D phases during epitaxial deposition of silicon and germanium onto the surface of highly oriented pyrolytic graphite.

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Photoelectronic properties and devices of 2D Xenes

Cited by 17 publications

References 193 publications

Atomically Thin Semiconductor TiPtGe and Heterostructure of β-Antimonene/TiPtGe: A First-Principles Study

Atomically Thin Semiconductor TiPtGe and Heterostructure of β-Antimonene/TiPtGe: A First-Principles Study

Intrinsic Coupling between Piezoelectric and Electronic Transport Properties in Janus γ-GeSnXO (X = S, Se) Monolayers with Vertical Piezoelectricity

RHEED Study of the Epitaxial Growth of Silicon and Germanium on Highly Oriented Pyrolytic Graphite

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