Defect
engineering is widely applied in transition metal dichalcogenides
(TMDs) to achieve electrical, optical, magnetic, and catalytic regulation.
Vacancies, regarded as a type of extremely delicate defect, are acknowledged
to be effective and flexible in general catalytic modulation. However,
the influence of vacancy states in addition to concentration on catalysis
still remains vague. Thus, via high throughput calculations, the optimized
sulfur vacancy (S-vacancy) state in terms of both concentration and
distribution is initially figured out among a series of MoS2 models for the hydrogen evolution reaction (HER). In order to realize
it, a facile and mild H2O2 chemical etching
strategy is implemented to introduce homogeneously distributed single
S-vacancies onto the MoS2 nanosheet surface. By systematic
tuning of the etching duration, etching temperature, and etching solution
concentration, comprehensive modulation of the S-vacancy state is
achieved. The optimal HER performance reaches a Tafel slope of 48
mV dec–1 and an overpotential of 131 mV at a current
density of 10 mA cm–2, indicating the superiority
of single S-vacancies over agglomerate S-vacancies. This is ascribed
to the more effective surface electronic structure engineering as
well as the boosted electrical transport properties. By bridging the
gap, to some extent, between precise design from theory and practical
modulation in experiments, the proposed strategy extends defect engineering
to a more sophisticated level to further unlock the potential of catalytic
performance enhancement.