Photoelectron core-level spectroscopy and scanning-tunneling-microscopy study of the sulfur-treated GaAs(100) surface

Moriarty, Philip; Murphy, Bridget; Roberts, L.; Cafolla, A.A.; Hughes, Greg; Koenders, Ludger; Bailey, Paul

doi:10.1103/physrevb.50.14237

Cited by 87 publications

(61 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…2. The fitting parameters ͑Table I͒ were within the range of previously reported values for decapped GaAs surfaces, 11,12 except for the Gaussian widths which were significantly broader than those reported for either the GaAs͑001͒ ͑Ref. 11͒ or GaAs͑111͒B surfaces.…”

supporting

confidence: 79%

Absence of long-range ordered reconstruction on the GaAs(311)A surface

Moriarty

Dunn

et al. 1997

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

We have investigated the decapped GaAs͑311͒A surface using both scanning tunneling microscopy and synchrotron-radiation photoemission. While our data are in broad agreement with the structural model of GaAs͑311͒A proposed in a recent study ͓Wassermeier et al., Phys. Rev. B 51, 14 721 ͑1995͔͒, we find considerable differences in the surface order. In particular, the As dimer rows are unbroken over much shorter length scales and are highly kinked. We observe a correspondingly lower degree of anisotropy in the surface roughness than that previously reported. An (8ϫ1) reconstruction was not observed. An analysis of As 3d and Ga 3d core-level photoemission spectra suggests that surface As atoms are in only one bonding configuration while surface Ga adopts two different bonding states. We discuss possible origins for the core-level spectra surface components.

show abstract

supporting

confidence: 79%

Absence of long-range ordered reconstruction on the GaAs(311)A surface

Moriarty

Dunn

et al. 1997

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

show abstract

“…After exposure to solutions that contain HS -ions the low-energy component, which exists in the As 3d core-level spectrum of initial bare GaAs(1 0 0) surface (Fig. 6) and can be assigned to As-As surface dimers [33], diminishes. Simultaneously a new well-defined component shifted to higher binding energies from the main AsGa component appears.…”

Section: Photoemission Spectroscopy Studymentioning

confidence: 99%

Passivation at semiconductor/electrolyte interface: Role of adsorbate solvation and reactivity in surface atomic and electronic structure modification of III–V semiconductor

Lebedev

2008

Applied Surface Science

View full text Add to dashboard Cite

“…7 Several methods of applying sulphur have been performed, including solution-based methods, 7,8 gasbased methods 9,10 and by the use of an electrochemical cell. 11 Most studies have focused on the low index surfaces of GaAs 8,12 and InP, 13,14 whereas there has been relatively little work on the surfaces of InAs and InSb. The first sulphide treatment on the surface of GaAs was reported using Na2S·9H2O solution.…”

Section: Introductionmentioning

confidence: 99%

Influence of intermolecular interactions on the structure of phthalocyanine layers in molecular thin film heterostructures

2003

View full text Add to dashboard Cite

The surface structures of copper phthalocyanine (CuPc) thin films deposited on sulphur-passivated and plane perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA)-covered InAs(100) surfaces have been studied by low energy electron diffraction (LEED) and van der Waals (vdW) intermolecular interaction energy calculations. The annealing to 300 o C and 450 o C of (NH4)2Sx-treated InAs(100) substrates produces a (1×1) and (2×1) S-passivated surface respectively. The CuPc deposition onto the PTCDA-covered InAs(100) surface leads to a ring-like diffraction pattern, indicating that the 2D ordered overlayer exists and the structure is dominantly determined by the intermolecular interactions rather than substrate-molecule interactions. However, no ordered LEED patterns were observed for the CuPc on S-passivated InAs(100) surface. The intermolecular interaction energy calculations have been carried out to rationalise this structural difference. In the case of CuPc unit cells on PTCDA layer, the planar layered CuPc structure is more stable than the α-herringbone structure, consistent with the experimental LEED results. For CuPc unit cells on a S-(1×1) layer, however, the α-herringbone structure is more stable than the planar layered structure, consistent with the absence of diffraction pattern. The results show that the lattice structure during the initial stages of thin film growth is influenced strongly by the intermolecular interactions at the interface.

show abstract

Photoelectron core-level spectroscopy and scanning-tunneling-microscopy study of the sulfur-treated GaAs(100) surface

Cited by 87 publications

References 34 publications

Absence of long-range ordered reconstruction on the GaAs(311)A surface

Absence of long-range ordered reconstruction on the GaAs(311)A surface

Passivation at semiconductor/electrolyte interface: Role of adsorbate solvation and reactivity in surface atomic and electronic structure modification of III–V semiconductor

Influence of intermolecular interactions on the structure of phthalocyanine layers in molecular thin film heterostructures

Contact Info

Product

Resources

About