2004
DOI: 10.1016/j.jallcom.2003.07.013
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Photoelectrochemical study of hydrogen in Zircalloy-2 oxide films

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Cited by 1 publication
(4 citation statements)
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(11 reference statements)
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“…These values were summarized in Table 2. This result shows that the all oxide films have an impurity levels in the original band gap because the value of 4.6-4.9 eV agrees well with previously reported band gap energy for ZrO 2 films, 4.8 eV [1,2,10,11]. It suggests that the sub-band was formed by doped elements or hydrogen or oxygen vacancy.…”
Section: Photo-electrochemical Property Of Zirconium Oxide Filmsupporting
confidence: 90%
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“…These values were summarized in Table 2. This result shows that the all oxide films have an impurity levels in the original band gap because the value of 4.6-4.9 eV agrees well with previously reported band gap energy for ZrO 2 films, 4.8 eV [1,2,10,11]. It suggests that the sub-band was formed by doped elements or hydrogen or oxygen vacancy.…”
Section: Photo-electrochemical Property Of Zirconium Oxide Filmsupporting
confidence: 90%
“…As shown in Fig. 2, the oxide film on hydride 1%NbZr and hydrided 2.5%NbZr possessed a peak around −0.53 and −0.56 V, respectively which suggests that some chemical reactions may occur around this potential only under the illumination in contrast with oxide film on hydrided Zr or Zircalloy without Nb [1,2]. That of hydrided Zry4-1.0Nb also possessed a peak around 0.2 V. However it appears independently of the illumination.…”
Section: Photo-electrochemical Property Of Zirconium Oxide Filmmentioning
confidence: 91%
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