2020
DOI: 10.1149/1945-7111/abd283
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Photoelectrochemical Performance of S,N-Codoped TiO2 Films Supported on Ti and their Enhanced Photoelectrocatalytic Activity in the Generation of Hydroxyl Radicals

Abstract: New photoanodes for recalcitrant pollutant degradation should harvest photons from a wide region of the solar spectrum and promote a direct water oxidation reaction towards the hydroxyl radical generation. For this purpose, sulfur, nitrogen-codoped titanium dioxide (S,N-TiO2) films were prepared with different sulfur percentages (1.0, 2.5 and 5.0 at.%) on Ti expanded meshes by sol-gel dip-coating followed by thermal treatment at 400 °C. The morphology, composition, oxidation states of dopants, structural featu… Show more

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Cited by 3 publications
(3 citation statements)
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“…Most extensively studied among them is TiO 2 , which has large band gap of 3.2 eV and absorbs only UV radiation. [23,24] ZnO having similar short comings is also a material of great interest in PEC research. Although its properties are similar to TiO 2 but it is less efficient in terms of PEC performance.…”
Section: F I G U R E 3 Diagram Displaying Criterion Of Choosing Elect...mentioning
confidence: 99%
“…Most extensively studied among them is TiO 2 , which has large band gap of 3.2 eV and absorbs only UV radiation. [23,24] ZnO having similar short comings is also a material of great interest in PEC research. Although its properties are similar to TiO 2 but it is less efficient in terms of PEC performance.…”
Section: F I G U R E 3 Diagram Displaying Criterion Of Choosing Elect...mentioning
confidence: 99%
“…Sols were prepared by using a 1.0:4.6 alkoxide: alcohol volume ratio, a 1.0:1.1 alkoxide: acetylacetone molar ratio and a 1.0:4.0 alkoxide: water molar ratio. Thiourea and urea was added to prepare S,N-TiO 2 films with a sulfur percentage of 2.5 at.%, this atomic percentage were selected according to previous work, in which the crystalline, optical and semiconductor properties as well as photoelectrochemical performance displayed for 2.5 at.% S,N TiO 2 /Ti electrode [29]. Ti support was dip-coated with four layers of sol at 6 cm•min −1 immersion rate.…”
Section: Preparation Of Sn Tio 2 /Ti Photoanodesmentioning
confidence: 99%
“…Ti support was dip-coated with four layers of sol at 6 cm•min −1 immersion rate. The films were dried at 100 °C for 1 h and then annealed at 400 °C for 1 h [29].…”
Section: Preparation Of Sn Tio 2 /Ti Photoanodesmentioning
confidence: 99%