Photoelectrochemical and photosensing behaviors of hydrothermally grown ZnO nanorods

Abstract

ZnO nanorods have been grown on indium-tin-oxide coated glass substrates by a low cost chemical process. Current-voltage characteristics have been studied using ZnO nanorods as photoanode in an electrochemical cell. The flat band voltage shift and depletion width of ZnO nanorods/electrolyte interface have been estimated from Mott-Schottky (MS) characteristics. The electrochemical impedance measurements have been carried out to study the charge transport mechanism at the semiconductor-electrolyte interface under dark and white light (100 mW/cm2) illumination. The doping concentration of nanorods has been extracted from MS plot. Photoresponse behavior of ZnO nanorods is found to be enhanced than seed layers with the incident of white light. Spectral dependent photovoltage of ZnO nanorods has been carried out using monochromatic light of wavelength 250–600 nm. The photopotential recovery time has been estimated for nanorods and seed layers. The stability of ZnO nanorods as a photoanode has been investigated.

A study of hydrothermally grown ZnO nanorod-based metal-semiconductor-metal UV detectors on glass substrates

“…31 It can be seen clearly from Figure 5(a) that the I-V characteristics of our ZnO NR-based MSM devices are nonlinear, which confirms the formation of Schottky contacts between the metal (Pd) and the semiconductor (ZnO NRs), in accordance with the Schottky-Mott theory. 32 The I-V relation of these ZnO NR-based MSM detectors can be described as follows 31,33 :…”

Enhanced Photoelectrochemical Performance of the BiVO4/Zn:BiVO4 Homojunction for Water Oxidation

“…The higher photovoltage change can be attributed to a greater accumulation of photogenerated charges. Without light, the recovery of the photovoltage can attributed to trapping and recombination of charge carriers mediated by the trap states . The photovoltage decay behaviors of different samples with the light off are shown in Figure b.…”

Flexible, transparent, high dielectric and photoconductive thin films using ZnO nanosheets-multi-walled carbon nanotube-polymer nanocomposites

“…The extrapolation at the linear region of (ߙℎߥ) ଶ vs ℎߥ plot to the energy axis gives the calculated band gap of ZnO and found to be 3.25 eV, which is equal to the bulk band gap [17]. impedance data using the following relations [34,35].…”

“…ZnO is an important II-VI semiconductor, have been extensively studied in photovoltaics [15,16], photoelectrochemical cells [17], UV detectors [18] , lasers [19], light emitting diodes [20] and gas sensors [21] , due to its unique optical and electrical properties including wide band gap, higher excitonic binding energy, superior electron mobility, low cost, and environmental friendliness. On the other hand, carbon nanotube has many remarkable electrical and physical properties including high carrier transport mobility [22,23], high mechanical strength [24] and excellent chemical stability.…”