1970
DOI: 10.1002/pssa.19700020245
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Photoelectrical properties of n-type CdSnP2-p-type Cu2S heterojunction

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Cited by 16 publications
(3 citation statements)
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“…8,9 It is a narrow-gap semiconductor with E g =0,2eV. Manganese in indium antimonide crystals introduces a shallow acceptor level at energy E a ∼9meV and InSb crystals can be doped with manganese 10 in a wide range of manganese concentrations 10 14 <N Mn <10 19 cm -3 .…”
Section: Methodsmentioning
confidence: 99%
“…8,9 It is a narrow-gap semiconductor with E g =0,2eV. Manganese in indium antimonide crystals introduces a shallow acceptor level at energy E a ∼9meV and InSb crystals can be doped with manganese 10 in a wide range of manganese concentrations 10 14 <N Mn <10 19 cm -3 .…”
Section: Methodsmentioning
confidence: 99%
“…Consequently, these compounds have found use in a range of semiconductor applications, such as non-linear optical devices 2,3 , photodiodes 4,5 , spintronic devices 6,7 , and more recently, thin film intermediate band solar cells 8 . Copper-iron-sulfide chalcopyrite (CuFeS 2 ) is also commercially the most important copper ore as it accounts for the majority of copper reserves.…”
Section: Introductionmentioning
confidence: 99%
“…CdSnP2 is representative of ternary compounds of the type A . B C which have some interesting properties (1,2). The photoconductivity of n-type CdSnP2 crystals (undoped and copper or lithium doped) was investigated.…”
Section: B Y I I I V Vmentioning
confidence: 99%