Photoelectric Property Modulation by Nanoconfinement in the Longitude Direction of Short Semiconducting Nanorods

Tang, Chaolong; Jiang, Chengming; Bi, Sheng; Song, Jinhui

doi:10.1021/acsami.6b02497

Cited by 14 publications

(6 citation statements)

References 43 publications

(63 reference statements)

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“…Among these SPM techniques, conductive atomic force microscopy (CAFM) has been successfully applied to study the conductive properties on single or individual nanostructures [30][31][32]. CAFM investigations on a variety of nanowires, such as ZnO, InAs, CdS, CdSe, GaAs, InAsSb, and Si NWs, have already been reported [33][34][35][36][37][38]. While most researches focused on the conductive properties of nanowires with fixed parameters, some investigations were carried out to explore the doping dependence of conductive properties [37][38][39].…”

Section: Introductionmentioning

confidence: 99%

Investigating Size-Dependent Conductive Properties on Individual Si Nanowires

Wang

et al. 2020

Nanoscale Res Lett

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Periodically ordered arrays of vertically aligned Si nanowires (Si NWs) are successfully fabricated by nanosphere lithography combined with metal-assisted chemical etching. By adjusting the etching time, both the nanowires' diameter and length can be well controlled. The conductive properties of such Si NWs and particularly their size dependence are investigated by conductive atomic force microscopy (CAFM) on individual nanowires. The results indicate that the conductance of Si NWs is greatly relevant to their diameter and length. Si NWs with smaller diameters and shorter lengths exhibit better conductive properties. Together with the I-V curve characterization, a possible mechanism is supposed with the viewpoint of size-dependent Schottky barrier height, which is further verified by the electrostatic force microscopy (EFM) measurements. This study also suggests that CAFM can act as an effective means to explore the size (or other parameters) dependence of conductive properties on individual nanostructures, which should be essential for both fabrication optimization and potential applications of nanostructures.

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Section: Introductionmentioning

confidence: 99%

Investigating Size-Dependent Conductive Properties on Individual Si Nanowires

Wang

et al. 2020

Nanoscale Res Lett

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“…[4]. So, given the length-dependent OAC, it is easy to recognize that the adsorbed oxygen density N s on a ZnO NW surface increases when its length increases, leading to an increase in the density of captured electrons which can be proved by the scanning results of surface potential in the report [5].…”

Section: The Procedures Of Modelmentioning

confidence: 85%

“…A peak appeared naturally in the photocurrent-length curve. In addition, they made some supplemental works, such as the research that the lengthdependent photoinduced electron density from the surface of a ZnO NW which originates from the desorption of electrons confined in the NW surface [5], to improve their theory. It seems that this interesting phenomenon has been explained well.…”

Section: Introductionmentioning

confidence: 99%

Length-Dependent Photoelectric Property of ZnO Nanowires

Ren

Líu

et al. 2022

Nanoscale Res Lett

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An interesting phenomenon that the photocurrent (the difference between illumination and dark current) of a ZnO nanowire (NW) under a specified voltage increased as its length increased in a certain range was observed previously and it was supposed to be mainly due to a special mean free path effect (MFPE) which caused a special distribution of dark electron density along the length with two higher electron density regions near the two ends of the NW, respectively, and the lower one in the middle part. However, such an explanation would be unreasonable and the true reasons should be the growing-process caused variation of the oxygen adsorption capacity along the NW length and the length-dependent lifetime of photogenerated carriers. Based on this understanding, a theoretical model to properly explain this phenomenon is proposed and the calculation results are in good agreement with the experimental data. This work has introduced an improved insight into the theory of the length-dependent photoelectric property of ZnO NWs.

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“…Besides the studies applying single nanowire devices which is not easy to fabricate, scanning probe microscopy (SPM)-based electrical measurements have revealed themselves as powerful techniques for electrical characterizations at nanoscale [14,15]. Among these SPM techniques, conductive atomic force microscopy (CAFM) has been most often applied to study the conductive properties of individual nanostructures such as films, heterostructures as well as nanowires [16][17][18][19][20]. By combining with laser irradiation, it can be modified as photoconductive atomic force microscopy (PCAFM) which provides a route to investigate the photoconductive properties on individual nanostructures [21,22].…”

Section: Introductionmentioning

confidence: 99%

Photoelectrical properties investigated on individual Si nanowires and their size dependence

Jiang

et al. 2020

Preprint

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Periodically ordered arrays of vertically aligned Si nanowires (Si NWs) are successfully fabricated with controllable diameters and lengths. Their photoconductive properties are investigated by photoconductive atomic force microscopy (PCAFM) on individual nanowires. The results show that the photocurrent of Si NWs increases significantly with the laser intensity, indicating that Si NWs have good photoconductance and photoresponse capability. This photo-enhanced conductance can be attributed to the photo-induced Schottky barrier change, confirmed by I-V curve analyses. On the other hand, electrostatic force microscopy (EFM) results indicate that a large number of photo-generated charges are trapped in Si NWs under laser irradiation, leading to the lowering of barrier height. Moreover, the size dependence of photoconductive properties is studied on Si NWs with different diameters and lengths. It is found that the increasing magnitude of photocurrent with laser intensity is greatly relevant to the nanowires’ diameter and length. Si NWs with smaller diameters and shorter lengths display better photoconductive properties, which agrees well with the size-dependent barrier height variation induced by photo-generated charges. With optimized diameter and length, great photoelectrical properties are achieved on Si NWs. Overall, in this study the photoelectrical properties of individual Si NWs are systematically investigated by PCAFM and EFM, providing important information for the optimization of nanostructures for practical applications.

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Photoelectric Property Modulation by Nanoconfinement in the Longitude Direction of Short Semiconducting Nanorods

Cited by 14 publications

References 43 publications

Investigating Size-Dependent Conductive Properties on Individual Si Nanowires

Investigating Size-Dependent Conductive Properties on Individual Si Nanowires

Length-Dependent Photoelectric Property of ZnO Nanowires

Photoelectrical properties investigated on individual Si nanowires and their size dependence

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