“…This phenomenon is consistent with the previous simulation calculation results of our research group. [ 43–47 ] The lattice constant value c film at the substrate temperature of 250 °C is greater than the ideal value c bulk , which may be due to the existence of large residual tensile stress in the sample. Meanwhile, the temperature of the reflected atoms during deposition may increase due to the increase of substrate temperature.…”
Herein, Al-doped ZnO (AZO) thin films are prepared on quartz glass substrates by RF magnetron sputtering. The effects of substrate temperature (T s ) on the structure, morphology, electrical, and optical properties of AZO films are investigated by X-ray diffraction, field emission electron microscopy, Hall effect testing instrument, and ultraviolet spectrophotometer, respectively. The results show that the doping of Al element does not change the structure of ZnO films, and all films have typical hexagonal wurtzite structure with preferred c-axis orientation. The film sample has the strongest (002) diffraction peak and the smallest value of full-width at half-maximum at the T s value of 150 °C. With the increase of T s value, the grain size of the film increases first and then decreases. At 150 °C, the film exhibits good electrical conductivity, and its resistivity is 0.6210 À2 Ω cm, the carrier concentration is 9.8410 19 cm À3 , and the Hall mobility is 13.66 cm 2 V À1 s À1 . All samples show high transmittance, and the average transmittance in the stable visible light region is as high as 95% at the T s value of room temperature and 250 °C, and the average transmittance of all samples is above 80%. This provides a method for the application of ZnO transparent conductive films.
“…This phenomenon is consistent with the previous simulation calculation results of our research group. [ 43–47 ] The lattice constant value c film at the substrate temperature of 250 °C is greater than the ideal value c bulk , which may be due to the existence of large residual tensile stress in the sample. Meanwhile, the temperature of the reflected atoms during deposition may increase due to the increase of substrate temperature.…”
Herein, Al-doped ZnO (AZO) thin films are prepared on quartz glass substrates by RF magnetron sputtering. The effects of substrate temperature (T s ) on the structure, morphology, electrical, and optical properties of AZO films are investigated by X-ray diffraction, field emission electron microscopy, Hall effect testing instrument, and ultraviolet spectrophotometer, respectively. The results show that the doping of Al element does not change the structure of ZnO films, and all films have typical hexagonal wurtzite structure with preferred c-axis orientation. The film sample has the strongest (002) diffraction peak and the smallest value of full-width at half-maximum at the T s value of 150 °C. With the increase of T s value, the grain size of the film increases first and then decreases. At 150 °C, the film exhibits good electrical conductivity, and its resistivity is 0.6210 À2 Ω cm, the carrier concentration is 9.8410 19 cm À3 , and the Hall mobility is 13.66 cm 2 V À1 s À1 . All samples show high transmittance, and the average transmittance in the stable visible light region is as high as 95% at the T s value of room temperature and 250 °C, and the average transmittance of all samples is above 80%. This provides a method for the application of ZnO transparent conductive films.
“…reported the photoelectric conversion properties of 2D ZnO, graphene, Si, Gr/ZnO, Gr/Si, and ZnO/Gr/Si heterostructures. [ 54 ] The absorption coefficient of ZnO/Gr/Si remains high over a wide energy range and reaches the maximum in the visible light range (Figure 3fi). The 2D ZnO/Gr/Si vdW heterostructure has high light absorption efficiency and can stably absorb photon energy in a wide frequency range, resulting in more photogenerated electrons and holes, which is beneficial to improving the photoelectric conversion efficiency (Figure 3fii).…”
Section: Characteristics Of 2d Materials For Self‐powered Sensorsmentioning
confidence: 99%
“…Reproduced with permission. [ 54 ] Copyright 2022, Elsevier Ltd. g) Schematic illustration of the epitaxial lateral heterostructures. Reproduced with permission.…”
Section: Characteristics Of 2d Materials For Self‐powered Sensorsmentioning
confidence: 99%
“…Copyright 2017, Elsevier B.V. f), i) Absorption coefficient, ii) reflectivity of 2D ZnO, Gra, Si, Gra/ZnO, Gra/ Si, and ZnO/Gra/Si. Reproduced with permission [54]. Copyright 2022, Elsevier Ltd. g) Schematic illustration of the epitaxial lateral heterostructures.…”
With the development of the Internet of Things, there is an increasing need for clean energy and large-scale sensory systems. Triboelectric/piezoelectric nanogenerators (TENGs/PENGs), have attracted considerable attention as a new type of power generation terminal, which can harvest surrounding energy and convert it into electrical energy. To improve the output performance of nanogenerators (NGs) and diversify related applications, 2D materials with high carrier mobility and excellent piezoelectric properties can be directly used or integrated as different types of self-powered sensors. In this review, the authors first introduce the excellent piezoelectric and optoelectronic properties of 2D materials, followed by the triboelectric series of 2D materials used in TENGs. The categories of integrated self-powered sensors based on 2D materials are then summarized according to their different structures and compositions. We also discuss in detail the recent applications of integrated self-powered sensors based on 2D materials from five aspects. Finally, the challenges and outlooks in the research field of self-powered sensors are featured. Given the continuous development of self-powered sensors based on 2D materials, they are considered to have significant potential for applications in biomedicine, environmental detection, human motion monitoring, energy harvesting, and smart wearable devices.
“…In light of the above discussion, it is important that an in-depth understanding of the fundamental properties of Lu-doped ZnO, such as charge transfer and spectral changes, be achieved from a theoretical perspective to gain insight into the mechanism of Lu doping effects on ZnO. Density functional theory (DFT) has a wide range of applications in computational materials science, providing a valuable standard tool for predicting the electronic and optical properties of materials. − In recent years, various researchers have utilized DFT to analyze the physical properties of ZnO-doped systems, such as electrical properties, optical properties, magnetic properties, etc. It is now well established from a variety of studies that the results of the DFT calculations for the material match the experimental results, validating the reliability of the DFT.…”
We investigated the effect of different impurity concentrations
of lutetium (Lu)-doped ZnO on its optoelectronic properties utilizing
the first principles based on density functional theory. The findings
show that 1.85 at.% Lu-ZnO has the smallest lattice distortion and
the impurity formation energy is less than zero, with the likelihood
of chemical preparation. Analysis of electrical properties revealed
that the conductivity of Lu-doped ZnO decreases with increasing impurity
concentration and all show n-type semiconductors. Moreover, the spectral
data suggested that the transmittivity increases with increasing doping
concentration, and optical properties were extremely sensitive to
the impurity concentration in the visible region. The current findings
will greatly broaden the application of ZnO in photovoltaic devices.
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