1995
DOI: 10.1080/00150199508216933
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Photoelectret state in Al, Ga-Doped Bi12SiO20 crystals

Abstract: The results of the investigation of the photoelectret state in Al-and Ga-doped BSO crystals are presented. The dependences of thermally stimulated depolarization current and capacity in the temperature range (200-800) K are analyzed. Contribution of the quasidipole mechanism of polarization and parameters (the activation energies, the value of trapped charge, the relaxator "strength") of electrically active defects are determined.

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