1995
DOI: 10.1016/0022-3093(94)00660-1
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Photodoping in As2S3Ag structures

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Cited by 17 publications
(12 citation statements)
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“…In this process, the holes are trapped by Ag, while electrons are shifted deeper into the chalcogenide film and trapped there. The Ag species move in the doped chalcogenides as positively charged ions [29,30]. The electric field formed by the negatively charged chalcogen atoms and positively charged Ag + ions is sufficient for them to overcome the energy barrier at the interface.…”
Section: Solid Electrolyte Formationmentioning
confidence: 99%
“…In this process, the holes are trapped by Ag, while electrons are shifted deeper into the chalcogenide film and trapped there. The Ag species move in the doped chalcogenides as positively charged ions [29,30]. The electric field formed by the negatively charged chalcogen atoms and positively charged Ag + ions is sufficient for them to overcome the energy barrier at the interface.…”
Section: Solid Electrolyte Formationmentioning
confidence: 99%
“…diffusion. Unfortunately, except of the photo-diffusion of silver [2,3], we have very little information on light-induced atomic transport processes in amorphous chalcogenides. Studies on interdiffusion could provide a better understanding of photo-induced phenomena and in a broader sense, the problem of diffusion in amorphous semiconductors in general.…”
Section: Introductionmentioning
confidence: 98%
“…Photo-stimulated diffusion of metal (silver) in simple metal-glass heterostructures is frequently used for optical recording with geometrical surface relief creation in a two-step process of recording-selective etching [3]. This process can be extended even to the Ag/ChG nanomultilayers (NML) [4], but the experiments reveal unstability of both initial structures in respect of degradation due to the fast diffusion of silver to chalcogenides, that do not favors one-step recording of necessary optical relief.…”
Section: Introductionmentioning
confidence: 99%
“…Optical transmission spectra of as deposited (1) Bi/As 2 S 3 (a), Sb/As 2 S 3 (b) and Se/As 2 S 3 (c) NML with thicknesses d = 2 nm of Se, Bi and Sb sub-layers, and the same for illuminated by green laser diode (2) and annealed(3).…”
mentioning
confidence: 99%