Photodiodes for Monolithic CMOS Circuit Applications

Internet-of-Things (IoT) devices. Since the storage density of battery technologies has not followed Moore's law scaling trends, IoT systems that rely entirely on power conversion from outside sources such as thermal, vibrational, light, or radio waves are needed. [8] High-performance edge computers, incorporating complex IoT functions such as multiple sensors, encryption/decryption, data storage to nonvolatile memory (NVM), and computing intensive algorithms, [9] draw several hundreds of microwatts of power using the latest IC technology nodes. [10] Edge computing systems with higher memory data rates would be needed for artificial intelligence (AI) applications. [11] Several hundred of milliwatts of power may be required to improve performance for neuromorphic computing. [12] Power converters that can provide highest power in the smallest possible footprint and can be integrated with multiple chips would enable greater functionality. As radio frequency (RF) power converters suffer from low efficiency for chip size <1 mm due to reduced antenna size (l ≪ λ), light energy as a power source can provide much higher efficiency and higher power density in a much smaller footprint than RF devices. In addition to generating high power density, these photovoltaic (PV) devices can provide a stable and sufficient output voltage for on-chip circuitry (>3 V) to drive the nonvolatile memory, charge an on-chip battery, and other devices, without using the less efficient charge pump circuit to ramp up the voltage. There is a great interest in using micro-PVs to power and also communicate with IoT chips. [6,13-16] However, there are two main challenges with small edge computers using photovoltaic energy harvesting and power conversion. 1) Integration: no manufacturable process has been demonstrated for integrating micro-PV and other chips into one system, and 2) power density: existing micro-PVs are unable to meet the above power density and efficiency requirements. We developed solutions to both of these problems in this work. In prior works, the integration process was done using nonmanufacturable processes, including chip stacking and wire bonding between chips. [7,17-22] A high-throughput

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“…There is a great interest in using micro‐PVs to power and also communicate with IoT chips. [ 6,13–16 ]…”

Section: Figurementioning

confidence: 99%

“…In terms of power density and efficiency, Si micro-PVs [6,13,[23][24][25][26][27] suffer from low conversion efficiency and low power density using surface diode structure or require a thick substrate as absorption layer. Existing thin Si micro-PVs are designed for low-light (≈1 sun) applications.…”

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confidence: 99%

Dust‐Sized High‐Power‐Density Photovoltaic Cells on Si and SOI Substrates for Wafer‐Level‐Packaged Small Edge Computers

Han

Spratt

et al. 2020

Advanced Materials

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“…Bu sisteme güç ve veriler optik olarak aktarılmaktadır. Tümleşik tek yonga üzerindeki fotoduyarlı elemanların, optik güç elde edilmesinde kullanıldığı optik sistemler en fazla %5 oranında enerji çevirim oranına sahiptir [20].…”

Section: şEkilunclassified

Tamamen Opti̇k Mi̇krosi̇stemler İçi̇n 180nm Cmos Teknoloji̇si̇nde Tasarlanmiş Düşük Geri̇li̇m Beslemeli̇ Salingaçlarin Karşilaştirilmasi

Sarioğlu

Anil

2020

Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi

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Bu çalışmada tamamen optik entegre bir biyomedikal sistem için düşük güç tüketimine ve düşük besleme gerilimine sahip üç temel osilatör bazlı kapasitif ve dirençsel algılama devre yapısı incelenmiş ve bu devreler güç tüketimi, çalışma besleme gerilimi ve çıkış frekansı değerleri göz önüne alınarak karşılaştırılmıştır. Osilatör temelli algılama devrelerinde kullanılan elemanların değerleri 180 nm CMOS (Complementary Metal Oxide Semiconductor-Tamamlayıcı Metal Oksit Yarı İletken) Teknolojisine göre hesaplanmış ve benzetimleri gerçekleştirilmiştir. Ayrıca çıkış frekansının algılayıcı direnç ve kapasite değerine bağlı teorik eşitlikleri türetilmiştir. Halka osilatör devresi ile 0,5 V besleme geriliminde başarılı sonuçlar alınmış ve bu algılayıcının gerilim yükseltici devreler kullanımına ihtiyaç duymadan tek bir tümleşik CMOS fotodiyot ile çalışabilirliği gösterilmiştir.

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“…The supply unit is complete with a dc/dc converter block utilized to increase the voltage provided by the silicon photovoltaic cell so that the receiver can be supplied properly. An off-chip storage capacitor of 100 nF is also required for supply stability [20].…”

Section: A Cmos Chipmentioning

confidence: 99%

“…The fiber was fixed into its position within the hole with the application of some adhesive epoxy after an optimal response point was obtained. Absolute loss in short circuit current of the photovoltaic cell due to coupling is around 0.32 mA, if data of [20] are considered as a reference for non-coupled photovoltaic cell performance. This corresponds to relative loss values of 3.4 % and 13.8 % for 80 mW and 30 mW of laser power.…”

Section: Experimental Characterizationmentioning

confidence: 99%

Integrated Silicon Photovoltaics on CMOS With MEMS Module for Catheter Tracking

Kouhani

Camli

Cakaci

et al. 2015

J. Lightwave Technol.

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This work presents an electromagnetic actuation based, optoelectronic active catheter tracking system for magnetic resonance imaging (MRI). The system incorporates a radio frequency (RF) micro electro mechanical system (MEMS) resonator array actuated by the Lorentz force induced due to the strong dc magnetic field available in MRI environment. Power transfer to the system and the actuation detection are done optically via fiber optic cables that replace conventional conductive transmission lines; thereby enabling the tracking system to function safely under MRI. The complementary metaloxide-semiconductor (CMOS) receiver, optically powered by a supply unit housing an on-chip silicon photovoltaic cell, detects the location of the catheter tip. The RF MEMS resonator array transmits the position data by transducing the electrical signal into a resonant mechanical vibration linearly. The optical reading of this actuation can be done by diffraction grating interferometry or laser Doppler vibrometry. The fabricated resonator array is tested with the optically powered CMOS chip (0.18 µm UMC technology) in laboratory conditions. The driving electrical current supplied by the chip for resonator actuation is 25 µA rms, where the magnetic field provided by the experimental setup is 0.62 T. The resonator array is observed to be functional with real world application by showing a frequency response of 10 dB, which will be enhanced further under the stronger magnetic field available in 3 T MRI.

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Photodiodes for Monolithic CMOS Circuit Applications

Cited by 10 publications

References 23 publications

Dust‐Sized High‐Power‐Density Photovoltaic Cells on Si and SOI Substrates for Wafer‐Level‐Packaged Small Edge Computers

Dust‐Sized High‐Power‐Density Photovoltaic Cells on Si and SOI Substrates for Wafer‐Level‐Packaged Small Edge Computers

Tamamen Opti̇k Mi̇krosi̇stemler İçi̇n 180nm Cmos Teknoloji̇si̇nde Tasarlanmiş Düşük Geri̇li̇m Beslemeli̇ Salingaçlarin Karşilaştirilmasi

Integrated Silicon Photovoltaics on CMOS With MEMS Module for Catheter Tracking

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