Photodetectors based on GaInAsSb/GaAlAsSb heterostructures for the practical tasks of precision diode laser spectroscopy

Abstract

The paper considers the uncooled photodetectors based on GaInAsSb/GaAlAsSb heterostructures, which can be applied in precision diode laser spectroscopy. The spectral sensitivity range of photodetectors with a photosensitive area diameter of 1.0 mm and 2.0 mm is 1.0-2.4 μm. The current monochromatic sensitivity at the wavelength of 2.1 μm has a value of 1.0 A/W without bias. The capacity reaches 375 pF with a photosensitive area diameter of 1.0 mm and 800-5000 pF with 2 mm. The modern gas analyzers based on diode lasers and developed photodetectors for medical screening diagnostics by analyzing the gas compositions of exhaled air, for control of impurity gases in the process of rectification of inorganic hydrides, control of methane leaks in gas pipelines, as well as for registration of exhaust gases of a moving car are presented. Keywords: photodetector, heterostructure, diode laser spectroscopy, gas analyzer.

Model of DC Tunneling Conductivity via Hydrogen‐Like Impurities in Heavily Doped Compensated Semiconductors

“…[51–55]). Table 2 shows the results of calculating using formula (18) and experimental data [ 56–71 ] obtained in the regime of linear hopping of electrons and holes (Ohm's law) near the insulator–metal transition. Semiconductors with moderate compensation ratios K and the concentration of the doping (majority) hydrogen‐like impurity are considered.…”