Photodetection With Gate-Controlled Lateral BJTs From Standard CMOS Technology

Campos, Fernando S.; Faramarzpour, N.; Marinov, O.; Deen, M. Jamal; Swart, Jacobus W.

doi:10.1109/jsen.2012.2235827

Cited by 15 publications

(9 citation statements)

References 25 publications

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“…The thickness of the epitaxial layer and doping concentration have great influence on the performance of the UVPT-μLED device. 38 UVPT is a photocurrent formed by photogenerated carriers instead of a base current, in contrast to a conventional BJT. Nevertheless, the effect of doping concentration and thickness on the UVPT-μLED device in different regions can still be characterized qualitatively through conventional BJT characterization.…”

Section: Structural Optimization Of the Uvpt-μledmentioning

confidence: 99%

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Su,

Wang,

Zou

et al. 2024

ACS Photonics

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A vertical integration of indium gallium nitride/ gallium nitride (InGaN/GaN)-based microlight-emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor (UVPT), based on the same GaN material and process platform (UVPT-μLED), was proposed. The integrated device is a novel integrated device with light-emitting, detecting, sensing, driving and regulating functions. It can be used as a receiver and transmitter. The light-emission effect of the μLED on UVPT can be regulated by changing the power of an external light. Optical-electrical-optical conversion was conducted with Silvaco TCAD software. Electro-optic modulation characteristics and optical power amplification were attained through a Silvaco TCAD simulation. By optimization of the size and concentration of the device epitaxial, the current gain of the optimized device reaches a maximum of 240. The UVPT-μLED device shows a strong response to small-power light and a stable response to high-power light. The UVPT-μLED chip with a high switching ratio was successfully prepared and used to verify the feasibility of the UVPT-μLED device. The proposed monolithic integrated device not only can be used for traditional displays but also shows great potential in intelligent displays, such as human−computer interactive systems, on-chip optical interconnects, photonic chips and visible-light communications.

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Section: Structural Optimization Of the Uvpt-μledmentioning

confidence: 99%

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Su,

Wang,

Zou

et al. 2024

ACS Photonics

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show abstract

Section: Introductionmentioning

confidence: 99%

“…Phototransistors also have higher responsivity than photodiodes owing to the internal gain [9]- [13]. However, the photocurrent at low-light level is insufficient to set conventional phototransistors to the forward amplification operation region and thus the conversion gain deteriorates abruptly when the incident optical power decreases [9]. Some improved phototransistors, such as punchthrough enhanced phototransistors and gate-controlled lateral phototransistors, have been proposed to improve the sensitivity to light, but the improvement in conversion gain results in high dark current [12], [13].…”

Section: Introductionmentioning

confidence: 99%

Design and Numerical Verification of a Gate-Controlled Lateral Thyristor for Low-Light Level Detection

Sun

Pan

et al. 2021

IEEE J. Electron Devices Soc.

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Thyristors operated at switching point are highly sensitive to external physical signals such as light or temperature. However, due to the instability of sensitive switching point, conventional thyristors are commonly used as optical switches and hardly applied for low-light level detection. In this work, a silicon-based gate-controlled lateral thyristor (GC-LT), which takes advantage of high sensitivity at low-light, is studied by numerical simulation. A thyristor photodetector circuit and a novel super-off Reset operation method are also proposed to bias the GC-LT over the switching point quickly and allow the photodetector to be operated in a monotonic dynamic multi-sampling mode to achieve high sensitivity to low-light. Simulation results show that the Reset time can be shortened to <10 s without trigging the GC-LT. The trigger time of the photodetector is sensitive to the optical power density ranging from 1×10 -9 to 2.5×10 -6 W/cm 2 . Furthermore, the average optical gain is about 8.0-6.3, approximately one order of magnitude higher than that of the Si pinned photodiode.

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“…However these approaches achieves dynamic ranges of 70-80 dB, which is too low for some applications. Therefore, there is still a need to improve the performance of CMOS active pixel sensors with respect to high dynamic range, high fill-factor and low complexity [13,14].…”

Section: Introductionmentioning

confidence: 99%

A Tunable CMOS Image Sensor with High Fill-Factor for High Dynamic Range Applications

Campos

Swart

Deen

et al. 2020

7th International Electronic Conference on Sensors and Applications

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Several CMOS imager sensors were proposed to obtain high dynamic range imager (>100 dB). However, as drawback these imagers implement a large number of transistors per pixel resulting in a low fill factor, high power consumption and high complexity CMOS image sensors. In this work, a new operation mode for 3 T CMOS image sensors is presented for high dynamic range (HDR) applications. The operation mode consists at biasing the conventional reset transistor as active load to photodiode generating a reference current. The output voltage achieves steadystate when the photocurrent becomes equal to the reference current similar to the inverter operation in the transition region. At a specific bias voltage, the output swing from o to Vdd in a small light intensity range, however, high dynamic range is achieve using multiple readout at different bias voltage. For high dynamic range operation different values of bias voltage can be applied from each one the signal can be captured and then to compose a high dynamic range image. Compared to other high dynamic range architectures this proposed CMOS image pixel show as advantage high fill-factor (3 T) and lower complexity. Moreover, as the CMOS pixel does not operate in integration mode, de readout can be performed at higher speed. A prototype was fabricated at 3.3 V 0.35 µm CMOS technology. Experimental results as show by applying five different control voltage from 0.65 V to 1.2 V is possible to obtain a dynamic range about 100 dB.

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Photodetection With Gate-Controlled Lateral BJTs From Standard CMOS Technology

Cited by 15 publications

References 25 publications

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Design and Numerical Verification of a Gate-Controlled Lateral Thyristor for Low-Light Level Detection

A Tunable CMOS Image Sensor with High Fill-Factor for High Dynamic Range Applications

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