Photodetachment of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">H</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">−</mml:mi></mml:mrow></mml:msup></mml:mrow></mml:math>in an electric field

Du, Ming; Delos, J. B.

doi:10.1103/physreva.38.5609

Cited by 240 publications

(264 citation statements)

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“…These oscillations are similar as if they are in the presence of a static electric field [5,6,7,8,9,10,11]. Quite recently, Afaq and Du [12] have argued that this oscillatory effect in the photodetachment cross section of H − is because of two-path interference of the detached-electron wave from the negative ion.…”

Section: Introductionmentioning

confidence: 60%

Photodetachment of H ⁻ near a Partially Reflecting Surface—I

Afaq

2008

Chinese Phys. Lett.

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Theoretical and interpretative study on the subject of photodetachment of H − near a partial reflecting surface is presented, and the absorption effect of the surface is investigated on the total and differential cross sections using a theoretical imaging method. To understand the absorption effect, a reflection parameter K is introduced as a multiplicative factor to the outgoing detached-electron wave of H − propagating toward the wall. The reflection parameter measures, how much electron wave would reflect from the surface; K = 0 corresponds to no reflection and K = 1 corresponds to the total reflection.PACS number: 32.80.GcIt has been observed both theoretically as well as experimentally that the photodetachment cross section of H − shows a smooth behavior in the free space [1,2]; while in the presence of a reflecting surface it displays oscillations [3,4]. These oscillations are similar as if they are in the presence of a static electric field [5,6,7,8,9,10,11]. Quite recently, Afaq and Du [12] have argued that this oscillatory effect in the photodetachment cross section of H − is because of two-path interference of the detached-electron wave from the negative ion. To the observation point, one path comes directly from the source H − , while the second path appears to be coming from an image of the source behind the wall. In reference [12], the idea has been discussed without considering the absorption effect of a wall. What would happen on the photodetachment cross section of negative ion when the wall in use will be absorbing? This problem is still interesting and has to be discussed. I use a simple model for H − and provide quantitative answer to the problem.Near an absorbing wall the physical picture of the photodetachment process may be described as: When the detached-electron wave is made incident on the wall, a part of it is absorbed by the wall and the other part is reflected with low intensity. This low intensity electron wave propagates away from the system and appears to be coming from an image behind the wall, and at a very large distance it interferes with the direct outgoing detached-electron wave. Consequently, we obtain an outgoing electron flux interference pattern on the screen. The photodetachment cross section is proportional to the integrated outgoing electron flux across a large enclosure in which the source H − sits.A partial reflecting wall (0 ≤ K ≤ 1) is used for the electron scattering and it is placed from H − at a distance more than 50 Bohr radii, so that the asymptotic approximations can be valid. The assumptions about the partial reflecting wall are the same as in reference [12]. For an observer at large distance from H − , there are two components of detached-electron wave going from H − to the observer. The first component propagates directly from H − to the observer as if there is no wall; the second component first propagates toward the wall, after being partially reflected by the wall, it then propagates from the wall to the observer. In the theoretical imaging

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Section: Introductionmentioning

confidence: 60%

Photodetachment of H ⁻ near a Partially Reflecting Surface—I

Afaq

2008

Chinese Phys. Lett.

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“…The classical orbits which will contribute then depend on the nature and spatial extent of the coupling. In fact in the well-known problem of diamagnetic hydrogen, the "source function" analogous to f W (y) varies on a scale much smaller than the relevant phase, being effectively a delta-function, and the resulting semiclassical theory involves all closed orbits at the source point 26 and not periodic orbits. The current situation is intermediate between the absorption spectrum for diamagnetic hydrogen and a pure density of states measurement; a periodic orbit sum can describe the tunneling spectrum quantitatively, but a closed orbit formula (Eq.…”

Section: Semiclassical Theory Of Resonant Tunneling a Bardeen Apmentioning

confidence: 99%

Quantum chaos in quantum wells

Narimanov

Stone

1999

Physica D: Nonlinear Phenomena

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“…In order to present our results in the most general form, it is convenient to use scaled units based on the single parameter κ of the model potential (8): the length unit is 1/κ; the energy and the frequency are measured in units of |E 0 | and |E 0 |/h; the field amplitude F is measured in units of the 'internal field', F 0 = 2m|E 0 | 3 /|e|h and the corresponding scaled unit of the intensity, I = cF 2 (9), which is self-consistent for the (one-parameter) δ-potential model. However, it is well known that for real negative ions more exact results may be obtained using, instead of N, a corrected normalization constant, N c , which may be obtained, e.g., by analysing the asymptotic behaviour of the wavefunction for large r (cf [29,128,140] for details). For this case, our results for the photodetachment cross sections, σ (n) , and/or probabilities should be multiplied by the renormalization factor A c = 2π N 2 c /κ.…”

Section: Definitions and Scaled Unitsmentioning

confidence: 99%

Multiphoton detachment of a negative ion by an elliptically polarized, monochromatic laser field

Manakov

Frolov

Borca

et al. 2003

J. Phys. B: At. Mol. Opt. Phys.

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The quasistationary quasienergy state approach (QQES) is applied to the analysis of partial (n-photon) decay rates and angular distributions (ADs) of photoelectrons produced by an elliptically polarized laser field. The problem is formulated for a weakly bound electron with an energy E 0 in the threedimensional δ-model potential (which approximates the short-range potential of a negative ion) interacting with a strong monochromatic laser field having an electric vector F (ωt). The results presented cover weak (perturbative), strong (nonperturbative), and superstrong field regimes as well as a wide interval of frequencies ω extending from the tunnelling (hω |E 0 |) and multiphoton (hω < |E 0 |) cases up to the high frequency domain (hω > |E 0 |).For a weak laser field, exact equations for the normalization factor and for the Fourier coefficients of the QQES wavefunction at the origin (|r| → 0) (that are key elements of the QQES approach for a δ-model potential) as well as for the detachment amplitudes are analysed analytically using both standard RayleighSchrödinger perturbation theory (PT) in the intensity, I , of the laser field and Brillouin-Wigner PT expansions involving the exact (complex) quasienergy . The lowest-order perturbative results for the n-photon ADs are presented in analytic form, and the parametrization of ADs in terms of polarization-and angular-independent atomic parameters is discussed for the general case of elliptical polarization. The major emphasis is on the analysis of an ellipticity induced distortion of three-dimensional ADs and, especially, on the elliptic dichroism (ED) effect, i.e. the dependence of the photoelectron yield in a fixed direction n on the sign of the ellipticity (or on the helicity) of a laser field. The dominant role of binding potential effects for a correct description of ED and threshold effects is demonstrated, and the intimate relationship between atomic ED factors and scattering phases of the detached electron is established for multiphoton detachment, including the above-threshold case. For a strong laser field, we present an accurate derivation for the QQES wavefunction and decay rates in the Keldysh approximation (KA) from exact QQES equations, including analytical, first-order ('rescattering') corrections to the KA results. The symmetries of ADs and the existence of ED are established using the exact analytical result for the n-photon detachment amplitude. Accurate numerical results are presented for the variation of the structure of the ADs as well as of the ED effect with increasing laser intensity.For the high frequency case,hω > |E 0 |, a rigorous analytical treatment of higher-order PT effects is presented for one-photon detachment, taking into account corrections of higher orders in I to the well-known photodetachment cross section for a short-range potential. Together with the exact numerical analysis of the total and partial decay rates forhω > |E 0 |, these results demonstrate the existence of a quasistationary stabilization regime in the de...

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Photodetachment ofH−in an electric field

Cited by 240 publications

References 12 publications

Photodetachment of H ⁻ near a Partially Reflecting Surface—I

Photodetachment of H ⁻ near a Partially Reflecting Surface—I

Quantum chaos in quantum wells

Multiphoton detachment of a negative ion by an elliptically polarized, monochromatic laser field

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Photodetachment ofH−in an electric field

Cited by 240 publications

References 12 publications

Photodetachment of H − near a Partially Reflecting Surface—I

Photodetachment of H − near a Partially Reflecting Surface—I

Quantum chaos in quantum wells

Multiphoton detachment of a negative ion by an elliptically polarized, monochromatic laser field

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Product

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Photodetachment of H ⁻ near a Partially Reflecting Surface—I

Photodetachment of H ⁻ near a Partially Reflecting Surface—I