Photodefinable Polybenzoxazole as Interlevel Dielectric and Buffer Layer for GaAs HBT Technology

Yota, Jiro; Ly, Hoa; Barone, Dragana

doi:10.1149/1.2983155

Cited by 3 publications

(8 citation statements)

References 17 publications

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“…However, as mentioned earlier, cured PBO tends to have mechanical characteristics that are not as good as those of cured polyimide. 3,7,14,15,17,18,22,[28][29][30][31] Comparison of interlevel dielectric process flows.-The three interlevel dielectric materials evaluated in this study have significantly different process flows due to their material characteristics and their compatibility with existing GaAs HBT technology used. Figure 7 shows the three different process flows for these interlevel dielectrics of ͑a͒ PECVD Si 3 N 4 , ͑b͒ dry-etch polyimide, and ͑c͒ photosensitive PBO, evaluated starting from the bottom metal ͑Metal 1͒ patterning/deposition process steps up to the top metal ͑Metal 2͒ patterning/deposition process steps.…”

Section: G174mentioning

confidence: 99%

“…They include applications, such as surface passivation, premetal dielectric, capacitor dielectric, interlevel dielectric, antireflective coating, final passivation, redistribution layer, and as a stress buffer layer and an encapsulant in packaging. [1][2][3][4][5][6][7][8][9][10][11][12] There are several types of dielectrics that are typically used for interlevel dielectrics. The most widely used are spin-on and plasma-enhanced chemical vapor deposition ͑PECVD͒ dielectrics.…”

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confidence: 99%

“…The PBO has similarly low dielectric constant ͑ = 2.9-3.2͒ and has lower moisture absorption property than polyimide. 3,7,14,15,[28][29][30][31] The PBO and polyimide film can be made photodefinable by adding a photosensitizer, and therefore, can be simply patterned without dry-etch process. However, compared to the PECVD Si 3 N 4 film, one of the drawbacks of most, if not all, the spin-on polymer materials, including those mentioned above, is that they need to be thermally cured at higher temperatures to obtain their desired mechanical characteristics.…”

mentioning

confidence: 99%

“…2,16,24 In general, cured polyimide has better mechanical characteristics than cured PBO. 3,7,14,15,17,18,22,[28][29][30][31] In this study, we investigated and characterized the use of PECVD Si 3 N 4 , nonphotosensitive polyimide, and photosensitive PBO film as an interlevel dielectric for GaAs HBT technology. We evaluated the material characteristics of each film and compared the process flow when using each material and listed the advantages and disadvantages of each flow, including the number of process steps required and costs and cycle time associated with each flow.…”

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confidence: 99%

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Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

Yota

2009

J. Electrochem. Soc.

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Multiple factors need to be considered when selecting an interlevel dielectric material for GaAs semiconductor device fabrication including what the electrical, mechanical, chemical, thermal, and cost requirements are and whether the material and the process are compatible with GaAs processing. In this study, we evaluated several interlevel dielectric materials for GaAs heterojunction bipolar transistor ͑HBT͒ technology. This technology requires the material to have good gapfill and planarizing characteristics, as the various device and interconnect structures can have significant topography. Additionally, the process typically can only have a maximum temperature of Ͻ300°C, as device degradation can occur at higher temperatures. The dielectric materials evaluated are plasma-enhanced chemical vapor deposition ͑PECVD͒, silicon nitride ͑Si 3 N 4 ͒, polyimide, and photodefinable polybenzoxazole ͑PBO͒. The PECVD Si 3 N 4 is mostly conformal when deposited. However, it has a high dielectric constant, cannot be used as gapfill material, and does not planarize the underlying topography, which makes multilevel metallization challenging. Polyimide and PBO, both of which need to be thermally cured, have a lower dielectric constant than PECVD Si 3 N 4 . However, the polyimide in this study has to be dry-etched, unlike the photosensitive PBO. Furthermore, the PBO has better gapfill and planarization capabilities than polyimide.Dielectrics are widely used for various applications in semiconductor device fabrication in the processing of both silicon and compound semiconductors, such as GaAs. They include applications, such as surface passivation, premetal dielectric, capacitor dielectric, interlevel dielectric, antireflective coating, final passivation, redistribution layer, and as a stress buffer layer and an encapsulant in packaging. [1][2][3][4][5][6][7][8][9][10][11][12] There are several types of dielectrics that are typically used for interlevel dielectrics. The most widely used are spin-on and plasma-enhanced chemical vapor deposition ͑PECVD͒ dielectrics. The spin-on dielectrics include both organic and inorganic films, such as benzocyclobutene ͑BCB͒, spin-on glass, polyimide, polybenzoxazole ͑PBO͒, and many others. 1,6,7,13-15 The most commonly used PECVD films include undoped and doped silicon dioxide ͑SiO 2 ͒, silicon oxynitride ͑SiON͒, and silicon nitride ͑Si 3 N 4 ͒. 11,12,[16][17][18][19][20][21][22][23] In GaAs technology, there are many factors that need to be taken into consideration when selecting an interlevel dielectric material, and depending on the material selected, the process flow is different. One of the most important considerations is the temperature and thermal budget constraint of the technology for which the interlevel material is to be used. For instance, while the maximum processing temperature for the backend-of-line for Si technology typically is 400°C, the maximum temperature for most GaAs technologies is 300°C or less. At temperatures higher than 300°C, significant GaAs device degradation occ...

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Section: G174mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

Yota

2009

J. Electrochem. Soc.

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“…Dielectrics have been widely used for various applications in semiconductor fabrication, in the processing of both silicon and compound semiconductors, such as GaAs. They include applications, such as surface passivation, pre-metal dielectric, capacitor dielectric, interlevel dielectric, anti-reflective coating, final passivation, redistribution layer, and as stress buffer layer and encapsulant in packaging (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12). There are several types of dielectrics that are typically used for interlevel dielectrics.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

Yota

2009

ECS Trans.

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In this study, we have evaluated several interlevel dielectric materials for GaAs hetero-junction bipolar transistor (HBT) technology. This technology requires the material to have good gapfill and planarizing characteristics, as the various device and interconnect structures can have significant topography. Additionally, the process typically can only have a maximum temperature of <300oC, as device degradation can occur at higher temperatures. The dielectric materials evaluated are PECVD silicon nitride (Si3N4), polyimide, and photodefinable polybenzoxazole (PBO). The PECVD Si3N4 is mostly conformal when deposited. However, it has a high dielectric constant, cannot be used as gapfill material, and does not planarize the underlying topography, which makes multilevel metallization challenging. Polyimide and PBO, both of which need to be thermally cured, have lower dielectric constant than PECVD Si3N4. However, the polyimide has to be dry-etched, unlike the photosensitive PBO. Furthermore, the PBO has better gapfill and planarization capabilities than polyimide.

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Tailoring the Properties of Polyurethane Coatings with Epoxidized Bio-Polyol Spin-Coated onto Glass and P-Type Si(100) Substrates

Budlayan

Arco

Alguno

et al. 2022

MSF

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High-performance plastics or engineering polymers have been actively studied for various microelectronic applications as the demand for faster processing speeds increases. Taking advantage of its high Young’s modulus ideal for inter-layer dielectric applications, polyurethane (PU), a class of linearly-segmented polymer primarily made by reacting isocyanate and polyol, were deposited on borosilicate glass and p-type Si (100) substrates via spin coating method utilizing epoxidized soybean oil as a bio-polyol replacement. Optical micrographs showed that 100% ESBO-based PU coatings exhibited homogeneous and superior quality coatings in contrast to 50% ESBO-and 100% petroleum-based PU coatings as confirmed by scanning electron micrographs and EDX analysis. Based on the surface profilometry data, we found out that PU coatings with film thickness ranging from 6 μm to 28.5 μm can be achieved. FTIR-ATR analysis revealed that maintaining the stoichiometric ratio between O–H and N–C–O vibrational modes closer to unity is a vital factor to produce a high-quality PU coating regardless of the choice of substrate. The average bandgap energy of 4.35 ± 0.03 eV was estimated from the UV-vis reflectance spectra, and the electrical resistance of 107–1010 orders of magnitude was measured using a two-probe method which are typical for dielectric materials. Preliminary insights about the dielectric response of the fabricated PU coatings were investigated using electrochemical impedance spectroscopy and a low κ-value of 2.749 was calculated from the Nyquist plot of the 7.9-μm thick 100% ESBO-based PU coating deposited at 6000 rpm for 45 seconds. These promising results proved that PU coatings from bio-polyols can be tailored to achieve desired coating properties that are amenable for next-generation microelectronic packaging and curable photoresists.

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Photodefinable Polybenzoxazole as Interlevel Dielectric and Buffer Layer for GaAs HBT Technology

Cited by 3 publications

References 17 publications

Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

Comparison of Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

Tailoring the Properties of Polyurethane Coatings with Epoxidized Bio-Polyol Spin-Coated onto Glass and P-Type Si(100) Substrates

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