Abstract:A photodefinable dielectric was developed using epoxycyclohexyl polyhedral oligomeric silsesquioxanes (POSS) and a photocatalyst. POSS is a hybrid organic/inorganic dielectric which has favorable mechanical and chemical stability for use as a permanent dielectric in microfabrication. Sharp, 10 lm wide features were formed from POSS using 365 nm radiation. The optical contrast was 1.51. POSS films were thermally stable to 350°C and demonstrated chemical stability in a variety of solvents and oxidants. The polym… Show more
“…Previously, dichromate has been used to oxidize surface films and etch epoxy boards to improve the chemical bonding of electroless metal to the surface. 21 The chromic acid etch investigated here consisted of 40 mL DI water, 75 mL sulfuric acid, and 1.3 g potassium dichromate, and was maintained at 90 • C. The chromic acid etch led to the deposition of an adherent, elecroless copper layer on the POSS substrate; however, the results were sometimes difficult to reproduce. It was found that a similar solution without the potassium dichromate, containing only the sulfuric acid (i.e.…”
Section: Resultsmentioning
confidence: 99%
“…POSS film formulations and processing were completed as described previously. 21 The POSS samples were spin-coated onto the FR-4 boards and then soft-baked on a hotplate at 85 o C for 5 min to remove the solvent from the polymer film. A 1 kW Hg-Xe lamp with a broad band filter (350 to 380 nm wavelength) was used for exposure with an optimal dose of 250 mJ/cm 2 .…”
In this study, the electroless deposition of copper and silver was investigated on epoxy and silicon dioxide-based substrates. A cost-efficient, Sn/Ag catalyst was investigated as a replacement for the Sn/Pd catalyst currently used in board technology. The surface of the epoxy based polyhedral oligomeric silsesquioxane (POSS) films was modified by plasma and chemical etching for electroless activation without the creation of a roughened surface. The electroless copper deposited on the modified POSS surface exhibited excellent adhesion when annealed at 180 • C in nitrogen for 90 min or at room temperature for 24 hr. Electroless copper deposition was also demonstrated on oxidized silicon wafers for through silicon via sidewall deposition.
“…Previously, dichromate has been used to oxidize surface films and etch epoxy boards to improve the chemical bonding of electroless metal to the surface. 21 The chromic acid etch investigated here consisted of 40 mL DI water, 75 mL sulfuric acid, and 1.3 g potassium dichromate, and was maintained at 90 • C. The chromic acid etch led to the deposition of an adherent, elecroless copper layer on the POSS substrate; however, the results were sometimes difficult to reproduce. It was found that a similar solution without the potassium dichromate, containing only the sulfuric acid (i.e.…”
Section: Resultsmentioning
confidence: 99%
“…POSS film formulations and processing were completed as described previously. 21 The POSS samples were spin-coated onto the FR-4 boards and then soft-baked on a hotplate at 85 o C for 5 min to remove the solvent from the polymer film. A 1 kW Hg-Xe lamp with a broad band filter (350 to 380 nm wavelength) was used for exposure with an optimal dose of 250 mJ/cm 2 .…”
In this study, the electroless deposition of copper and silver was investigated on epoxy and silicon dioxide-based substrates. A cost-efficient, Sn/Ag catalyst was investigated as a replacement for the Sn/Pd catalyst currently used in board technology. The surface of the epoxy based polyhedral oligomeric silsesquioxane (POSS) films was modified by plasma and chemical etching for electroless activation without the creation of a roughened surface. The electroless copper deposited on the modified POSS surface exhibited excellent adhesion when annealed at 180 • C in nitrogen for 90 min or at room temperature for 24 hr. Electroless copper deposition was also demonstrated on oxidized silicon wafers for through silicon via sidewall deposition.
“…Metz et al proposed PI-based thin microfluidic channels by the lamination technique [11], but PI adhesive bonding suffers from film non-uniformity and void generation problems [12]. Finally, physical techniques for manufacturing microair structures, including the use of sacrificial materials, have been extensively studied by the group of Kohl [13][14][15][16][17][18][19][20][21]. Based on this concept, single-layer microchannels and micro-scaled sealed cavities in PI have been reported by several authors [13,16,22].…”
Section: Introductionmentioning
confidence: 99%
“…Poly(propylene, ethylene, cyclohexane) carbonates [14,16,20,22], dendritic hyperbranched polymers (HBP) [23], polynorborenes (PNB) [13,16,19,21], tetracyclododecenes (TCD) [18,19] have been used for this approach.…”
Section: Introductionmentioning
confidence: 99%
“…They can be structured by electron beam lithography [24], dry etch [14,22] or conventional lithography methods [15,19]. Most of those materials, however, are not compatible with PI-overcoat processes because of a high decomposition temperature, and a high solubility of the sacrificial material in the PI's solvent.…”
We report a process for the realization of polyimide films with custom-designed microporosity based on the heat-induced depolymerization of polyimide-embedded polypropylene carbonate microstructures. The foam-like microstructures are up to 40 µm thick and incorporate air cavities with a width ranging from 20 to 200 µm, a length up to 5 mm and a height of 20 µm. We model the mechanical stress–strain properties of the microcavities using both analytical and numerical methods. The simulation data are in good agreement with the results of nanoindentation and microcompression experiments, which show the reduction of the effective Young's modulus from 5.77 ± 0.06 GPa for bulk polyimide to 2.51 ± 0.03 GPa for a foam-like layer.
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