Photocurrent-voltage relation of resonant tunneling diode photodetectors

Pfenning, Andreas; Hartmann, F.; Dias, Mariama Rebello Sousa; Langer, Fabian; Kamp, M.; Castelano, L. K.; López‐Richard, V.; Marques, G. E.; Höfling, Sven; Worschech, L.

doi:10.1063/1.4929424

Cited by 28 publications

(43 citation statements)

References 20 publications

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“…A three dimensional color-coded sketch of the RTD photodetector is shown in Figure 1 ( given in Refs. [13,15]. The schematic conduction (CB) and valence band (VB) profile under an applied bias voltage is shown in Figure 1 occurs and hence the photocurrent vanishes almost completely.…”

Section: Introductionmentioning

confidence: 99%

“…Similar to APDs, the RTD device performance is tuned by the applied bias voltage. In a recent publication, 13 we found that the RTD photocurrent-voltage relation is a nonlinear function, which can be described by three voltagedependent parameters: the RTD current-voltage characteristics in the dark , the RTD quantum efficiency , and the mean lifetime of photogenerated holes accumulated in vicinity to the resonant tunneling structure. Furthermore, the RTD photocurrent-voltage relation is not only a nonlinear function of the applied bias voltage, but also a nonlinear function of the incident illumination power .…”

Section: Introductionmentioning

confidence: 99%

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Sensitivity of resonant tunneling diode photodetectors

Pfenning¹,

Hartmann²,

Langer³

et al. 2016

Nanotechnology

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We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of 1.3 µm for illumination powers from pico to micro Watts. The sensitivity decreases nonlinearly with power.An illumination power increase of seven orders of magnitude leads to a reduction of the photocurrent sensitivity from 5.82 10 A/W to 3.2 A/W. We attribute the nonlinear sensitivity-power dependence to an altered local electrostatic potential due to hole-accumulation that on the one hand tunes the tunneling current, but on the other hand affects the lifetime of photogenerated holes. In particular, the lifetime decreases exponentially with increasing hole-population. The lifetime reduction results from an enhanced electrical field, a rise of the quasi-Fermi level and an increased energy splitting within the triangular potential well. The non-constant sensitivity is a direct result of the non-constant lifetime. Based on these findings, we provide an expression that allows to calculate the sensitivity as a function of illumination power and bias voltage, show a way to model the time-resolved photocurrent, and determine the critical power up to which the resonant tunneling diode photosensor sensitivity can be assumed constant.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Sensitivity of resonant tunneling diode photodetectors

Pfenning¹,

Hartmann²,

Langer³

et al. 2016

Nanotechnology

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“…24 Moreover, RTD-PDs enable high multiplication factors due to the possibility of controlling the tunneling current via Coulomb interaction of photo-generated minority charge carriers. 25 In recent publications, we studied the electrical characteristics of RTDs based on GaSb/AlAsSb double barrier structures and demonstrated room temperature resonant tunneling by incorporation of ternary GaAsSb or GaInSb prewells. 26,27 In this study, we present resonant tunneling diode photodetectors with a GaAsSb/AlAsSb double barrier regions.…”

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confidence: 99%

Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications

Rothmayr

Pfenning

Kistner

et al. 2018

Applied Physics Letters

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“…[12][13][14] This mechanism provides very high amplification factors exceeding several hundred thousand at considerably low operation voltages. 10,11,15,16 The GaSb/InAs/AlSb material system has brought forth resonant tunneling structures (RTS) with unique and enhanced characteristics. prewell emitters leads to room temperature resonant tunneling with peak-to-valley current ratios of 1.45 and The HR-XRD spectrum of RTD 1 shows a single peak at Δ 0°, which indicates a good and high quality latticematched crystal growth of the RTD and the AlGaAsSb contact region.…”

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confidence: 99%

Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection

Pfenning

Knebl

Hartmann

et al. 2017

Applied Physics Letters

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We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga 0.84 In 0.16 Sb and GaAs 0.05 Sb 0.95 prewell emitters leads to room temperature resonant tunneling with peak-to-valley current ratios of 1.45 and 1.36 , respectively. The room temperature operation is attributed to the enhanced Γ -L-valley energy separation and consequently depopulation of L-valley states in the conduction band of the ternary compound emitter prewell with respect to bulk GaSb. a) Electronic mail to: Andreas. Pfenning@physik.uni-wuerzburg.de b) Electronic mail to: Fabian.Hartmann@physik.uni-wuerzburg.de The three semiconductors GaSb, InAs and AlSb of the so-called 6.1 Å family cover a wide range of bandgap energies and unique material properties, which make them particularly suitable for applications in high-speed electronics and as mid-infrared optoelectronic semiconductor devices. 1,2 During the past few years, application related research focused on mid-infrared light sources and detectors. 3,4 Especially the progress on interband cascade lasers (ICLs) and interband cascade detectors (ICDs) with type-II superlattice absorbers has driven the field. [5][6][7] In a recent publication we proposed an alternative mid-infrared photodetector concept based on resonant tunneling diodes (RTDs) with 6.1 Å family semiconductors. 8 RTDs can be exploited as highspeed and low-noise amplifiers of weak, optically excited electrical signals. 9-11 Unlike avalanche photodiodes, in which the multiplication gain originates from impact ionization, the RTD photodetection principle is based on the modulation of the resonant tunneling current via Coulomb interaction in presence of photogenerated minority charge carriers. [12][13][14] This mechanism provides very high amplification factors exceeding several hundred thousand at considerably low operation voltages. 10,11,15,16 The GaSb/InAs/AlSb material system has brought forth resonant tunneling structures (RTS) with unique and enhanced characteristics. prewell emitters leads to room temperature resonant tunneling with peak-to-valley current ratios of 1.45 and The HR-XRD spectrum of RTD 1 shows a single peak at Δ 0°, which indicates a good and high quality latticematched crystal growth of the RTD and the AlGaAsSb contact region. For RTD 2 and RTD 3, compressive and tensile strain secondary patterns arise at smaller and higher angles, respectively, caused by the incorporation of the pseudomorphically GaInSb and GaAsSb regions. The secondary pattern of RTD 2 is more pronounced compared to RTD 3 due to the three times higher In compared to As concentration.Circular RTD mesa structures with diameters from 2 µm up to 13 µm are defined by optical lithography and dry-chemical etching. The etching depth is about 50 nm below the dou...

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Photocurrent-voltage relation of resonant tunneling diode photodetectors

Abstract: Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors

Cited by 28 publications

References 20 publications

Sensitivity of resonant tunneling diode photodetectors

Sensitivity of resonant tunneling diode photodetectors

Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications

Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection

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