Photocurrent multiplication at p-type semiconductor electrodes

Kelly, John J.; Minks, B.P.; Verhaegh, N.A.M.; Stumper, Jürgen; Peter, Laurence M.

doi:10.1016/0013-4686(92)85042-j

Cited by 25 publications

(32 citation statements)

References 35 publications

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“…Similar quantum efficiency measurements were performed with BrO- [4]. The results obtained were practically the same as with CIO-and are therefore not shown.…”

Section: And (D))mentioning

confidence: 57%

“…This process is known as current-doubling, since each photon causes the transfer of two charge carriers between oxidizing agent and semiconductor. With illuminated p-GaAs in acidic solutions containing either H2Oz, Br2 or Iz, reaction (3a) was always observed; in the second charge transfer step a hole is injected even at light intensities which cause a hole flux towards the surface exceeding the mass-transport limited flux of the oxidizing agent [3,4]. However, as suggested by reaction (3b) in Fig.…”

Section: Introductionmentioning

confidence: 78%

“…In this analysis surface recombination is shown to give rise to a frequency-dependent parallel capacitance which peaks at a potential at whch o = PanS [7]. The maximum of the peak is given by (4) At high frequency, the parallel resistance resulting from recombination tends to a limiting value, which is described by For space-charge layer recombination, a maximum in the parallel recombination capacitance is not expected. In fact, the additional parallel capacitance should show the same potential dependence as the space-charge layer capacitance, which increases continuously with decreasing band bending [S].…”

Section: Discussionmentioning

confidence: 98%

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The reduction of hypohalites at GaAs electrodes: Charge‐transfer and recombination processes

Minks

Kelly

1992

Ber Bunsenges Phys Chem

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Impedance Spectroscopy / Interfaces / Luminescence 1 Photoelectrochemistry SemiconductorsResults obtained from electrical impedance spectroscopy at n-GaAs in the dark with Fe(CN):-, C10-and BrO-in alkaline solution indicate that the cathodic reduction current is due mainly to electron-hole recombination at the surface. The same conclusion also holds for the recombination of photo-generated holes at illuminated n-GaAs in indifferent electrolyte. Electroluminescence measurements showed that surface recombination with the hypohalites is more effective than with Fe(CN):-. Quantum efficiency measurements at p-GaAs revealed that the second charge transfer step of the hypohalite reduction can involve either the capture of an electron by or the injection of a hole from a surface intermediate. This result leads to a slight revision of a mechanism previously proposed for the reduction of CIO-and BrO-at GaAs.

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“…Similar quantum efficiency measurements were performed with BrO- [4]. The results obtained were practically the same as with CIO-and are therefore not shown.…”

Section: And (D))mentioning

confidence: 57%

Section: Introductionmentioning

confidence: 78%

Section: Discussionmentioning

confidence: 98%

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The reduction of hypohalites at GaAs electrodes: Charge‐transfer and recombination processes

Minks

Kelly

1992

Ber Bunsenges Phys Chem

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“…Instead the quantum efficiency for reduction of the oxidizing agent decreases from 2 to 1, before water begins to be reduced. 18 The reduction of IO 3 -in alkaline 18 and acidic 25 solutions is, in this respect, even more striking. At low light intensity a quantum efficiency close to 6 is observed, which drops to 1 as the photon flux is increased.…”

Section: Discussionmentioning

confidence: 84%

“…For the oxidizing agents showing photocurrent doubling at p-type GaAs a distinction has to be drawn between two classes. 18 …”

Section: Discussionmentioning

confidence: 99%

Reduction of Peroxodisulfate at Porous and Crystalline Silicon Electrodes: An Anomaly

1996

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Electroluminescence from n-type porous silicon can be generated in solution by reduction of peroxodisulfate. It has been assumed that the SO 4•-radical ion, formed in the first reduction step, injects a hole into the valence band of the porous semiconductor. The hole should subsequently undergo radiative recombination with a conduction band electron. Using two techniques, viz., photocurrent quantum efficiency measurements with p-type porous and crystalline silicon electrodes and minority carrier injection studies with the "transistor technique", we found that the reduction of peroxodisulfate is, however, not always accompanied by hole injection. The silicon results are compared with results obtained on GaAs electrodes.

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Photoelectrochemical Systems Characterization

Kelly

Hens

Vanmaekelbergh

et al. 2002

Encyclopedia of Electrochemistry

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The sections in this article are Introduction Scope of the Chapter Special Features of Photoelectrochemical Systems Photoelectrochemical Characterization Methods Steady State and Time‐resolved Methods Current Density Versus Potential Techniques PC versus Light Intensity Techniques Luminescence‐based Techniques Bulk Systems In Situ Energetics of Semiconductor/Electrolyte Interfaces Electron‐hole Recombination Dynamics at the s/e Interface Introduction Current Density Versus Potential Measurements The Electrochemical Impedance of Surface Recombination The Optoelectrical Transfer Function of Surface Recombination Recombination Studied by Luminescence Complex Charge‐transfer Processes PC ‐doubling Reactions Dissolution of Semiconductors Sensitizer‐based Photoelectrochemical Systems Porous Photoelectrochemical Systems Introduction Special Properties of Porous Photoelectrochemical Systems Penetration of the Interfacial Layer in a Porous Semiconductor Electrode Charge Storage in a Porous Semiconductor Electrode Charge Storage in a Quantum Dot System Light Scattering in Macroporous Semiconductors Electron‐hole Photoexcitation by Sub‐band Gap Light Effective Electron‐hole Separation Luminescence from Porous Electrodes Electron Transport Electron Diffusion, Collection, and Recombination Characterization of Electron Diffusion and Back‐transfer by Light Intensity Modulated Techniques Experimental Results on Electron Transport

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Photocurrent multiplication at p-type semiconductor electrodes

Cited by 25 publications

References 35 publications

The reduction of hypohalites at GaAs electrodes: Charge‐transfer and recombination processes

The reduction of hypohalites at GaAs electrodes: Charge‐transfer and recombination processes

Reduction of Peroxodisulfate at Porous and Crystalline Silicon Electrodes: An Anomaly

Photoelectrochemical Systems Characterization

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