Photocurrent Enhancement of PtSe2 Photodetectors by Using Au Nanorods

Nakazawa, Tatsuya; Kim, Dong-Hyun; Kato, Shin‐ichi; Park, Jusang; Nam, Jwa‐Min

doi:10.3390/photonics8110505

Cited by 7 publications

(4 citation statements)

References 76 publications

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“…This result is attributed to the short mean free path (MFP) of PtSe 2 films and increased carrier scattering at the interface with an increased number of the PtSe 2 film in vertically stacked PtSe 2 /PtSe 2 homostructures. Based on the results of a previous study, [ 36 ] the theoretical MFP of hot electrons in metals was reported as 10–60 nm. In addition, the electronic MFP of 2D bulk MoS 2 material was ≈14 nm at room temperature.…”

Section: Resultsmentioning

confidence: 99%

Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe₂/PtSe₂ Homostructure

et al. 2022

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When a thermoelectric (TE) material is deposited with a secondary TE material, the total Seebeck coefficient of the stacked layer is generally represented by a parallel conductor model. Accordingly, when TE material layers of the same thickness are stacked vertically, the total Seebeck coefficient in the transverse direction may change in a single layer. Here, an abnormal Seebeck effect in a stacked two-dimensional (2D) PtSe 2 /PtSe 2 homostructure film, i.e., an extra in-plane Seebeck voltage is produced by wet-transfer stacking at the interface between the PtSe 2 layers under a transverse temperature gradient is reported. This abnormal Seebeck effect is referred to as the interfacial Seebeck effect in stacked PtSe 2 /PtSe 2 homostructures. This effect is attributed to the carrier-interface interaction, and has independent characteristics in relation to carrier concentration. It is confirmed that the in-plane Seebeck coefficient increases as the number of stacked PtSe 2 layers increase and observed a high Seebeck coefficient exceeding ≈188 μV K −1 at 300 K in a four-layer-stacked PtSe 2 /PtSe 2 homostructure.

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Section: Resultsmentioning

confidence: 99%

Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe₂/PtSe₂ Homostructure

et al. 2022

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“…Instead, the distinct temperature gradient in the longitudinal direction (∇T z ), it is sufficient for these heat carriers to affect in the out-of-plane direction since the thickness of the HR-PtSe 2 (2 nm) is shorter than the typical mean free path of carriers in 2D TMDC materials at room temperature. [43,44] This condition causes the momentum transfer of heat carriers from the HR-PtSe 2 layer to the LR-PtSe 2 layer through the interface, leading to an increase the total Seebeck coefficient compared to that of the single LR-PtSe 2 (3 nm) layer. What further supports this argument is that while these mechanisms and results are almost identical in the phonon drag effect, but the contribution of the phonon drag effect is negligible at room temperature.…”

Section: Discussionmentioning

confidence: 99%

Alternatingly Stacked Low‐ and High‐Resistance PtSe₂/PtSe₂ Homostructures Boost Thermoelectric Power Factors

Lee

Kang

Choi

et al. 2023

Adv Elect Materials

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2D transition-metal dichalcogenide (TMDC) materials are promising candidates with excellent thermoelectric (TE) properties owing to their low dimensionality in electronic and phonon transport. However, the considerable coupling of the Seebeck coefficient and electrical conductivity in such TE materials eventually results in the limit of the TE power factor increase, which severely hinders potential TE device applications. Herein, an alternative approach is demonstrated for breaking the strong coupling between the Seebeck coefficient and electrical conductivity in single TE materials by adopting a novel stacked PtSe 2 /PtSe 2 homostructure. By alternately piling low-resistance (LR) PtSe 2 (3 nm) onto high-resistance (HR) PtSe 2 (2 nm) as one unit, the Seebeck coefficient and electrical conductivity of such stacked homostructures can be greatly enhanced with slightly improved electrical conductivity, ultimately resulting in a TE power factor in three-unit-stacked homostructures that is ≈1,648% higher than that of a single PtSe 2 (15 nm) layer with the same thickness. This enhancement is attributed to an independent increase in the Seebeck coefficient, which depends on the interface among the LR and HR PtSe 2 layers. The findings pave the way for a method that, unlike power factor optimization in conventional thermoelectric materials, can only utilize the Seebeck coefficient and electrical conductivity of each layer in a stacked homostructure.

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“…These energetic electrons can then be injected into the adjacent semiconductor, such as the photoactive layer of a solar cell or the active region of a photodetector. 119,120 Once injected into the semiconductor, hot electrons can contribute to the device's performance in several ways including enhanced photocurrent, 121,122 reduced recombination losses, 121 extended spectral response, 121 and modified charge transport and recombination. 123 Hot electron transfer processes have also been investigated in plasmonic nanostructures (e.g., NCs) for solar energy harvesting.…”

Section: Perspectivesmentioning

confidence: 99%

“…Once injected into the semiconductor, hot electrons can contribute to the device's performance in several ways including enhanced photocurrent, 121,122 reduced recombination losses, 121 extended spectral response, 121 and modified charge transport and recombination. 123 Hot electron transfer processes have also been investigated in plasmonic nanostructures ( e.g.…”

Section: Perspectivesmentioning

confidence: 99%