Photocurrent Enhancement by a Rapid Thermal Treatment of Nanodisk-Shaped SnS Photocathodes

Patel, Malkeshkumar; Kumar, Mohit; Kim, Sangho; Kim, Yu Kwon

doi:10.1021/acs.jpclett.7b02998

Cited by 33 publications

(14 citation statements)

References 38 publications

(77 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In Figure , for both SnS/FTO and SnS/ERGO/FTO interfaces, this interval was 200 mV and 150 mV, respectively. Although these intervals may seem narrow, previous report of SnS thin film show that the potential interval where Mott‐Schottky plots are linear vary between 200 and 40 mV,, confirming our results.…”

Section: Resultssupporting

confidence: 92%

See 1 more Smart Citation

Electrodeposition and Characterization of a Tin Sulfide‐Electrochemically Reduced Graphene Oxide Heterojunction

et al. 2019

View full text Add to dashboard Cite

This work shows the formation of a heterojunction between tin (II) sulfide (SnS) and electrochemically reduced graphene oxide (ERGO), carried out through two electrochemical steps. In the first step, graphene oxide (GO) was electrochemically reduced on a fluorine-doped tin oxide (FTO) electrode. In the second step, the ERGO/FTO substrate was used as an electrode for the electrodeposition of SnS. In this study, each electrodeposited material (ERGO, SnS and SnS/ERGO heterojunction) was analyzed and characterized using different techniques, which confirmed the SnS/ERGO heterojunction formation. By employ-ing electrochemical impedance spectroscopy (EIS) and linear sweep photovoltammetry measurements, it was confirmed that SnS deposited in both, bare FTO and ERGO, is a p-type semiconductor. Furthermore, an improvement of the photocatalytic properties of the SnS/ERGO photocathode in comparison with the SnS film was observed. This effect is related to the ERGO interlayer between the SnS film and the FTO electrode, and the structural and morphology modification of the SnS film onto ERGO.

show abstract

Section: Resultssupporting

confidence: 92%

“…The electroreduction of GO was carried out by a one electrochemical step, similar to the procedure informed by J. Basu et al …”

Section: Methodsmentioning

confidence: 99%

Electrodeposition and Characterization of a Tin Sulfide‐Electrochemically Reduced Graphene Oxide Heterojunction

et al. 2019

View full text Add to dashboard Cite

show abstract

“…These SnS materials with a few layers have a wider optical band gap (>1.5 eV) than the corresponding bulk crystal . Owing to such a thickness‐dependent tunable band gap as well as its advantageous optical properties such as a high absorption coefficient (>10 4 cm −1 ) and a direct band gap, SnS gets great attention as an emerging material of interest for solar energy harvesting …”

Section: Introductionmentioning

confidence: 99%

Growth of Large‐Area SnS Films with Oriented 2D SnS Layers for Energy‐Efficient Broadband Optoelectronics

Patel

Kim

2018

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

The anisotropic properties of 2D orthorhombic SnS (tin monosulfide, p-type) layers can be utilized in energy-efficient optoelectronics by growing 2D SnS layers with a preferred orientation. To meet such a need, a strategy for growing SnS layers with the control of structural parameters such as orientation and thickness is highly desired. This report demonstrates a simple procedure for growing a large-area SnS thin film composed of nanoscale SnS platelets with a controlled orientation relative to the surface via a single-step process involving in situ sulfur depletion and phase structural transition of the sputter-deposited SnS 2 particles. The synthesized SnS films show good optoelectronic performances such as high signal-to-noise ratios, linear dynamic range, and high response speeds. In addition, the orientation of the SnS platelets is found to control the optoelectronic properties such as the electronic junction formation and the optical reflectance. The orientation-controlled SnS layers on Si substrate operate as a good photosensor with a good zero-bias photoresponse over a wide range of wavelengths including ultraviolet, visible, and near-infrared. The device performances evaluated from the transient photovoltage, photocurrent, Mott-Schottky characteristics, and impedance spectroscopy are all well correlated with the geometric orientation of the 2D SnS layers within the film.

show abstract

“…[36,173,203] Moreover, the abundant constituent elements, excellent stability, and low toxicity compared to lead and cadmium, also make SnSbased nanostructures more promising than most other semiconductors on the basis of long-term, low-cost, and environmentally benign optoelectronic technologies. [23,25,60,78,87,103,139,[210][211][212][213][214][215] In 2020, Krishnamurthi et al [23] successfully fabricated single-layer and multilayer SnS with lateral dimensions reaching the millimeter scale by utilizing van del Waals transfer of molten Sn on conventional substrates, such as SiO 2 /Si. Figure 21a presents the schematic diagram of SnS NS-based photodetector fabricated on a SiO 2 /Si substrate.…”

Section: Optoelectronicsmentioning

confidence: 99%

“…It can also be found that a much higher photocurrent density of 2.4 mA cm À2 is also obtained after a buffer layer of CdS was inserted between SnS and TiO 2 layers due to the formation of staggered type II heterojunction. [78] Apart from these, in 2017, Patel et al [215] fabricated high-quality thickness-controlled SnS thin films on a FTO-coated glass, which exhibited a significant enhancement of the cathodic photocurrent by a facile thermal treatment. Figure 21i presents the incident photon to current conversion efficiency (IPCE) values of SnS thin film-based photocathodes measured at an applied potential ranging from 0.1 to À0.3 V versus RHE.…”

Section: Optoelectronicsmentioning

confidence: 99%

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Zhu

et al. 2021

Small Science

View full text Add to dashboard Cite

Tin-based binary chalcogenide Sn-X (X ¼ S, Se, Te) compounds have attracted extensive interest in the optical, optoelectronic, catalysis, and flexible systems due to their intriguing performances. [1][2][3][4][5][6][7] The Sn-X (X ¼ S, Se, Te) compounds are typically layered materials and usually have three crystalline phases: hexagonal, monoclinic, and orthorhombic; orthorhombic phase is denoted by chemical formula SnX, and hexagonal and monoclinic phases are labeled as SnX 2 . [8] Until now, SnSe and SnTe compounds have already achieved great progress in many fields, especially for thermoelectronics and ferroelectrics, [9][10][11][12] and many important reviews have been reported on SnSe and SnTe compounds due to their rapid development. [8,[13][14][15][16] For example, in 2020, Chen et al. [14] summarized a comprehensive overview of controlled synthesis, characterization, and thermoelectric performance in SnSe. In 2018, Shi et al. [8] summarized the growth, characterization, and applications (photovoltaics, supercapacitors, rechargeable batteries, phase-change memory devices, and topological insulator) of SnSe. In 2018, Li et al. [15] reviewed the development of SnS, SnSe, and SnTe, mainly focusing on the controllable tuning of the electron and phonon transport as well as the challenges for further optimization and practical applications. Among Sn-X (X ¼ S, Se, Te) compounds, tin monosulfide (SnS) as a typical black phosphorus analogue, has also received intensive scientific attention due to its unique properties, such as inexpensive, sustainable, suitable bandgap between Si (1.12 eV) and GaAs (1.43 eV), [17] high absorption coefficient (10 À4 cm À1 ), [18] strong mechanical properties, and anisotropic optoelectronic, [19][20][21] which are of great value in optoelectronics, catalysis, sensors, and nanomedicines. [7,[22][23][24][25][26][27] In addition, layered SnS with suitable spacing structures hold promising potentials in the field of lithium (Li)-ion batteries and sodium (Na)-ion batteries due to their relatively high electrical conductivity and theoretical capacity. [28][29][30][31][32] However, although popular SnS has achieved great progress in a variety of fields, few comprehensive reviews have hitherto focused on the field of SnS-based nanostructures and their fascinating applications.Inspired by important reviews on SnSe reported by Chen [14] and Li [8] in recent years, we comprehensively summarized the synthesis, characterization, and the latest progress of SnS-based nanostructures, as shown in Figure 1. First, the most commonly employed techniques (hydrothermal, vapor deposition, electrostatic assembly, etc.) for preparing SnS and SnS-based nanostructures are presented in detail with their recent progress. Furthermore, the fundamental properties (crystal structure, electronic band structure, optical property, and Raman spectroscopy) and diverse applications (batteries, solar cells, catalysis, optoelectronics, sensors, ferroelectrics, thermoelectrics, nonlinear properties, and biomedical applicatio...

show abstract

Photocurrent Enhancement by a Rapid Thermal Treatment of Nanodisk-Shaped SnS Photocathodes

Cited by 33 publications

References 38 publications

Electrodeposition and Characterization of a Tin Sulfide‐Electrochemically Reduced Graphene Oxide Heterojunction

Electrodeposition and Characterization of a Tin Sulfide‐Electrochemically Reduced Graphene Oxide Heterojunction

Growth of Large‐Area SnS Films with Oriented 2D SnS Layers for Energy‐Efficient Broadband Optoelectronics

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

Contact Info

Product

Resources

About