Photocurrent Engineering of Silicon Nanowire Field‐Effect Transistors by Ultrathin Poly(3‐hexylthiophene)

Abstract

COMMUNICATION 1801270 (1 of 7)

A high-performance organic thin-film transistor with Parylene/PMMA bilayer insulation based on P3HT

“…Poly(3-hexylthiophene) has been commonly used as a soluble conjugated polymer in the active layer of organic field-effect transistors in recent decades. 1 , 2 , 3 , 4 , 5 , 6 However, the regularity of π-π stacking and molecular weight enhancement within P3HT is limited as an active layer. 7 The final performance of OTFTs depends not only on the intrinsic properties of each functional component but also on various other factors such as the growth mode of the active layer, 8 molecular order-orientation, 9 grain boundaries, 10 and grain size.…”

A high-performance broadband double-junction photodetector based on silicon nanowire arrays wrapped by silver nanoparticles for low-light imaging

“…Low dimensional semiconductor materials have been widely used in optoelectronic devices recently; 9,[14][15][16][17][18][19] especially, silicon nanowire (SiNW) arrays as an important member have been recognized as a desirable candidate for highly sensitive photodetector application due to their competitive advantages such as multiple reflection between forest-like structures increasing light path length, 20,21 triggering intrinsic photocurrent amplification, 22,23 prolonging photo-induced carrier lifetime owing to the large aspect ratio and shortening carrier transmission time, 18 and COMS compatibility. Moreover, SiNWs can be further decorated by other materials for constructing sensitivity and broadband photodetectors: (i) combination of twodimension materials with high carrier mobility (MoS 2 , PtSe 2 , graphene, etc.)…”

The Effect of Nanowire Gap for Silicon Nanowire Transistor to the Current-Voltage (I-Vds)

“…The study by Wang and Xu also investigates cutting-edge fabrication techniques for SiNW transistors, offering revolutionary techniques for nanowire gap engineering [3]. Additionally, the flexibility of SiNW transistors for future electronics was highlighted by Kim and Park's research, which looked at how to incorporate them into flexible electronic platforms [4]. The advancement of new technologies is explained by the remarkable scale of miniaturization to ultra-micro sizes [5].…”