Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 µm wavelength light

Seong, Hojun; Cho, Kyoungah; Kim, Sangsig

doi:10.1088/0268-1242/23/7/075011

Cited by 16 publications

(12 citation statements)

References 19 publications

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“…The Kim's group also pioneered the design of such devices with the use of HgTe CQD 30,31 . Nevertheless, the achieved level of performances remains quite limited, with photoresponsivity of the order of few nA.W -1 for illumination at a telecom wavelength 32,33,34 . We designed ITO electrodes on a PET substrate, both of them being transparent in the telecom wavelength range, see figure S3.…”

Section: Plot Of the Ratio Of The Intraband Signal Divided By The mentioning

confidence: 99%

Surface Control of Doping in Self-Doped Nanocrystals

Robin

Livache

Ithurria

et al. 2016

ACS Appl. Mater. Interfaces

110

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Self-doped nanocrystals raise great interest for infrared (IR) optoelectronics because their optical properties span from near to far IR. However, their integration for photodetection requires a fine understanding of the origin of their doping and also a way to control the magnitude of the doping. In this paper, we demonstrate that a fine control of the doping level between 0.1 and 2 electrons per dot is obtained through ligand exchange. The latter affects not only the interparticle coupling but also their optical properties because of the band-shift resulting from the presence of surface dipoles. We demonstrate that self-doping is a bulk process and that surface dipoles can control its magnitude. We additionally propose a model to quantify the dipole involved with each ligand. We eventually use the ligand design rule previously evidenced to build a near-infrared photodetector on a soft and transparent substrate. The latter significantly improves the performance compared to previously reported colloidal quantum dot-based photodetectors on plastic substrates operated in the telecom wavelength range.

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Section: Plot Of the Ratio Of The Intraband Signal Divided By The mentioning

confidence: 99%

Surface Control of Doping in Self-Doped Nanocrystals

Robin

Livache

Ithurria

et al. 2016

ACS Appl. Mater. Interfaces

110

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“…In the infrared region, Hg nanocomposites have been widely explored to produce active materials in both planar and vertical PD. In particular, HgTe colloidal nanocrystals have been investigated in PD at telecom wavelength [ 141 , 142 , 143 ] and for solar applications [ 144 , 145 ] for their photoconduction properties [ 146 ].…”

Section: Colloidal Semiconductormentioning

confidence: 99%

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

Dardano

Ferrara

2020

Micromachines

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With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5–10 years, thus drawing a line for future research.

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“…Photoconduction with HgTe nanocrystal was first investigated [71] in the near-infrared for the telecom wavelengths [20,72,73] and for solar cell [74,75]. Mid-infrared photoconduction is at present the property of the HgX CQD which drives the most interest in these materials [76,77].…”

Section: Photodetection Properties Of Hgte Hgse and Hgsmentioning

confidence: 99%