Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs

Zhu, Changju; Mao, Luhong; Zhao, Fan; Mao, Xurui; Guo, Weiqi

doi:10.1109/jphot.2017.2752841

Cited by 4 publications

(7 citation statements)

References 29 publications

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“…In this study, a graphene layer is fabricated before the sandwich structure, and the graphene layer forms a RTD-gated-graphene-2DEF. The developed RTD oscillator realizes power amplification via a graphene-plasma wave layer [17]. As shown in Figure 1a,b, a RTD oscillator comprises a RTD, RTD-gated-graphene-2DEF and two graphene antennas.…”

Section: Modelingmentioning

confidence: 99%

“…As shown in Figure 1d, ∆I = 29 mA/µm 2 and ∆V = 0.7 V. The RTD oscillator is biased at 0.7 V at NDR region. According to reference [14,16,17], Equation (3) can be assumed as…”

Section: Modelingmentioning

confidence: 99%

“…Moreover, the fabrication of high frequency RTD oscillator remains challenging.In [13], Burke et al developed the high-frequency transmission line model to describe a metal-gate/insulator/two-dimensional electron fluid (2DEF) structure. Then, the model was used in THz power amplification via plasma wave excitation [14,15], high-electron-mobility transistor (HEMT) with RTD gate [16], and photo-controlled THz amplified modulator [17]. In the previous study, a graphene layer was employed for plasma wave excitation [18][19][20][21].…”

mentioning

confidence: 99%

“…Secondly, output power increase is not only due to the increase in device size, but also due to a graphene layer which produces RTD-gated-graphene-2DEF and the negative differential resistance (NDR). According to references [14,16,17], two-dimensional electron fluid (2DEF) is required to realize power amplification, which is produced by RTD-gated HEMT with very complicated layered structure. Because the films thickness of the RTD-gated HEMT are very small, only a few nanometers, so the molecular beam epitaxy [19,22,23] or metal-organic chemical vapor deposition [24] is required [25].…”

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confidence: 99%

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Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

et al. 2019

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This study describes the design of a resonant tunneling diode (RTD) oscillator (RTD oscillator) with a RTD-gated-graphene-2DEF (two dimensional electron fluid) and demonstrates the functioning of this RTD oscillator through a transmission line simulation model. Impedance of the RTD oscillator changes periodically when physical dimension of the device is of considerable fraction of the electrical wavelength. As long as impedance matching is achieved, the oscillation frequency is not limited by the size of the device. An RTD oscillator with a graphene film and negative differential resistance (NDR) will produce power amplification. The positive electrode of the DC power supply is modified and designed as an antenna. So, the reflected power can also be radiated to increase RTD oscillator output power. The output analysis shows that through the optimization of the antenna structure, it is possible to increase the RTD oscillator output to 22 mW at 1.9 THz and 20 mW at 6.1 THz respectively. Furthermore, the RTD oscillator has the potential to oscillate at 50 THz with a matching antenna.

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Section: Modelingmentioning

confidence: 99%

“…As shown in Figure 1d, ∆I = 29 mA/µm 2 and ∆V = 0.7 V. The RTD oscillator is biased at 0.7 V at NDR region. According to reference [14,16,17], Equation (3) can be assumed as…”

Section: Modelingmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

et al. 2019

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“…In space, optical carrier does not require any spectrum licensing and therefore, is an attractive prospect for high bandwidth and capacity applications [3]. For on-chip communication, photo control has many advantages over electrical control, such as response sensitivity, no parasitic parameters and greatly modulated frequency [4]. These properties mean optical signals can achieve higher bandwidth than electrical signals, which are suitable for THz applications [5], [6].…”

Section: Introductionmentioning

confidence: 99%

Photo-Controlled Quantum Capacitors in Gated Graphene-Insulator-Graphene for Terahertz Frequency and Phase Modulations

Mao

Gu³

et al. 2020

IEEE J. Electron Devices Soc.

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This paper proposes a theoretical model of photo-controlled quantum capacitors in double-gated graphene-insulator-graphene (DGGIG) structure for terahertz (THz) frequency and phase modulations. In the model, the current-voltage characteristics of each segment of the DGGIG structure are controlled by different gate voltages. Using the different voltages, the DGGIG structure can be used to either generate plasma oscillation waves or shift phase in the terahertz band. Not only has the DGGIG structure various electrical properties, but also the optical properties are also excellent. Photoexcitation alters carrier concentration in DGGIG channel, and thus causes the change of the quantum capacitors. We propose a photo-controlled quantum capacitor model to quantify this phenomenon. The model shows that the quantum capacitors and photoexcitation have a sublinear dependence. An example of a device based on the model is given to describe the application of photo-controlled quantum capacitors in terahertz frequency and phase modulations. The modelled device shows that photoexcitation can change the frequency and phase of the plasma oscillation waves. INDEX TERMS Graphene-insulator-graphene, phase modulation, frequency modulation, plasma oscillation waves, photo-controlled quantum capacitors, terahertz.

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Analysis of the eight parameter variation of the resonant tunneling diode (RTD) in the rapid thermal annealing process with resistance compensation effect

et al. 2020

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The rapid thermal annealing process is a key technology to control the parameters of the resonant tunneling diode (RTD) and to achieve high performance for the device. In this paper, the rapid thermal annealing process on the planar RTD has been investigated experimentally. In the experiment, the annealing sample chips of different annealed times have been recorded from the annealing equipment and their I–V characteristics have been measured accordingly. From the I–V characteristics, the negative resistance and the series resistance of the RTD can be obtained. Thus, the relationship between these parameters and annealing time can be established. Finally, by analyzing the concept of the resistance compensation effect, this study explains fully and in detail the dependency of the RTD parameter variation on the annealing time. VP and Vi are significantly reduced, greatly lowering RS, which in return also reduces the heat loss of the circuit and the power consumption of the RTD digital circuits as well as the RTD terahertz oscillator. As VV decreases, negative resistance RN is increased, and thus, the output power of the RTD terahertz oscillator is increased. These results are very useful in the study of RTD devices and fabrication technology.

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Photocontrolled Terahertz Amplified Modulator via Plasma Wave Excitation in ORTD-Gated HEMTs

Cited by 4 publications

References 29 publications

Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas

Photo-Controlled Quantum Capacitors in Gated Graphene-Insulator-Graphene for Terahertz Frequency and Phase Modulations

Analysis of the eight parameter variation of the resonant tunneling diode (RTD) in the rapid thermal annealing process with resistance compensation effect

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