Photoconductivity spectral characteristics of semiconductors with exponential fundamental absorption edge

Vlasenko, A. I.; Vlasenko, Z. K.; Lyubchenko, A. V.

doi:10.1134/1.1187842

Cited by 4 publications

(4 citation statements)

References 4 publications

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“…This may be manifested through the differences in the spectral range and intensity of the photosensitivity. For example, reduction of the concentration of intrinsic carriers in the case of bandto-band impact mechanism of recombination will result in a lower rate of the Auger process and a higher photosensitivity of the material [12]. The same conclusion can be made for the Schokley-Read mechanism of recombination (see, for example, [22]).…”

Section: Photoconductivity Spectramentioning

confidence: 76%

“…The films grown by this technique had a thickness varying from 120 to 150 µm and a mirror-smooth surface, with mercury content at the surface corresponding to the composition x ~ 70-75 %. For measurements of photoelectrical characteristics, ohmic contacts were deposited using the conventional technique (see, for example, [12]) on the end planes of the film, including also the end planes of the substrate, or on the film surface, depending on the experimental conditions.…”

Section: Experimental Techniquementioning

confidence: 99%

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Distribution of components in epitaxial graded band gap heterostructures Cd(Mn,Zn)Te – Cd(Mn,Zn)HgTe and their photoelectrical properties

Vlasenko¹

1998

Semicond. Phys. Quantum Electron. Optoelectron.

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By using the method of VPE CdMnTe-CdMnHgTe, CdZnTe-CdZnHgTe heterocompositions were fabricated. Increase of their photo-sensitivity in comparison with the CdTe-CdHgTe structure is explained by removal of deformation stresses due to introduction of isovalent component (Mn, Zn) of smaller size and due to reduction of recombination activity of non-equilibrium charge carriers in the film. Photo-sensitivity increase in the field of metallurgical boundary in the CdMnTe-CdMnHgTe structure under increase of the Mn contents up to ó ≤ 0,08 in comparison to the CdZnTe-CdZnHgTe structure is connected with more precise matching of lattices matching of the initial materials. Other models of this phenomena are also discussed, conditioned in particular, by the influence of micro-and macro-heterogeneities of the diffusion interface, peculiarities of P-T diagrams, etc. On the basis of comparison of experimental and calculated profiles of the components distribution, the values of diffusion coefficient in the substrate and growing film were obtained.

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Section: Photoconductivity Spectramentioning

confidence: 76%

Section: Experimental Techniquementioning

confidence: 99%

Distribution of components in epitaxial graded band gap heterostructures Cd(Mn,Zn)Te – Cd(Mn,Zn)HgTe and their photoelectrical properties

Vlasenko¹

1998

Semicond. Phys. Quantum Electron. Optoelectron.

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“…In this case, as shown in Ref. [40], in wide-band crystals with the exponential dependence of the long-wave absorption edge in wide range of the thickness of samples and velocities of surface recombination, the effective value of energy gap can be determined with great accuracy by the effective position of the intrinsic maximum in the spectrum of photoconductivity. Thus, if the energy of interband transitions is estimated by the spectral position of the intrinsic maximum of photoconductivity, then it follows from the photoconductivity spectra given in Fig.…”

Section: Photoconductivity Spectra Of Si 2 Te 3 Crystalsmentioning

confidence: 91%

Electronic structure, optical and photoelectrical properties of crystalline Si2Te3

Блецкан¹

2019

Semicond. phys., quantum electron. optoelectron.

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In the framework of the density functional theory (DFT) in the approximation of local density adjusted for the strong correlation (LDA+U method), calculated were the band structure, total and partial densities of electronic states, as well as the spatial distribution of the electron density. According to the results of the calculation, Si 2 Te 3 is an indirect-gap semiconductor with the calculated band gap calc gi E = 2.05 eV, close to the experimentally measured opt g E = 2.13 eV. The absorption edge and photoconductivity spectra of Si 2 Te 3 crystal within the temperature range 80...293 K have been measured. It has been shown that the dependence of the absorption coefficient on the photon energy is described by the Urbach rule. The parameter σ 0 , associated with the constant of electron-phonon interaction, and the energy of effective phonons ħω ph , involved in formation of the absorption edge of crystalline Si 2 Te 3 , were determined using the temperature dependence of the absorption edge slope. Deviation from the stoichiometric composition in the direction of excess tellurium significantly affects the spectral distribution of the photoconductivity of Si 2 Te 3 crystals.

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“…with regard for (13), (14), (15) and (16) one can find the excess electron concentration ∆n = ∆n(x, α). The total number of excess electrons (related to unit area of irradiated surface) is found by integration of ∆n(x) from 0 to d. Solution of similar equations can be found elsewhere [16,17]:…”

Section: Lifetime and Surface Recombination Velocitymentioning

confidence: 99%

Studies of CdHgTe as a material for x- and g-ray detectors

Kosyachenko¹

2003

Semicond. Phys. Quantum Electron. Optoelectron.

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Photoconductivity spectral characteristics of semiconductors with exponential fundamental absorption edge

Cited by 4 publications

References 4 publications

Distribution of components in epitaxial graded band gap heterostructures Cd(Mn,Zn)Te – Cd(Mn,Zn)HgTe and their photoelectrical properties

Distribution of components in epitaxial graded band gap heterostructures Cd(Mn,Zn)Te – Cd(Mn,Zn)HgTe and their photoelectrical properties

Electronic structure, optical and photoelectrical properties of crystalline Si2Te3

Studies of CdHgTe as a material for x- and g-ray detectors

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