Photoconductivity spectra of CdHgTe crystals with photoactive inclusions

Vlasenko, A. I.; Vlasenko, Z. K.; Lyubchenko, A. V.

doi:10.1134/1.1187645

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2001

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“…This introduces an additional intensity dependence for the concentration of carbon interstitials and can by used to explain the observed peculiarities of introduction rates of A-centres and divacancies, provided that the divacancies also can decay through interaction with carbon interstitials. Here it is worth noting the existence of a complex of a divacancy with carbon atoms in the irradiated silicon according to the optically detected magnetic resonance studies [19].…”

Section: Discussionmentioning

confidence: 94%

Formation of radiation defects in silicon structures under low-intensity electron irradiation

Makhkamov¹,

Tursunov²,

Ashurov³

et al. 2001

Semicond. Sci. Technol.

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Formation of A-centres and divacancies in silicon p + -n-n + structures was investigated for 4 MeV electron irradiation in the low-intensity range of 10 11 -5 × 10 12 cm −2 s −1 . It is shown that the introduction rates of both A-centres and divacancies increase with intensity in this range and then saturate at intensities above 10 12 cm −2 s −1 . Using the data from the literature the introduction rates of these defects are discussed in a wide range of intensities of electron irradiation of 10 11 -10 15 cm −2 s −1 , indicating a consistent role of carbon interstitial atoms and electron-enhanced migration of Si self-interstitials in the observed behaviour of introduction rates.

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Section: Discussionmentioning

confidence: 94%