Photoconductivity of solution-processed MoS2 films

Cunningham, G.W.; Khan, Umar; Backes, Claudia; Hanlon, Damien; McCloskey, David; Donegan, John F.; Coleman, Jonathan N.

doi:10.1039/c3tc31402b

Cited by 104 publications

(146 citation statements)

References 41 publications

(88 reference statements)

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“…As shown in Figure 5c, a peak (valley) can be regarded as the combination of a fast rise (decay) and a sequent slow decay (rise) of the photocurrents. Similar behaviors are observed in other photodetectors based on MoS2 nanosheets, [16] although there a fast rise (decay) is followed by a slow rise (decay) of photocurrents. Similarly, we associate the current peaks and valleys with the presence of traps.…”

Section: Resultssupporting

confidence: 85%

“…[41][42][43] In particular, it is also comparable to that of MoS2 nanosheet films fabricated by the Langmuir-Blodggett (LB) method, [16] implying that our inkjet printing processes do not induce obvious performance degradation.…”

Section: Resultsmentioning

confidence: 59%

“…Similarly, we associate the current peaks and valleys with the presence of traps. [16] As soon as the light is switched on, the fast current rise is ascribed to the initial equilibration of carrier generation and recombination. [16] Afterwards, carriers are trapped and the current slowly decays.…”

Section: Resultsmentioning

confidence: 99%

“…This is consistent with other observation of pinholes in films of centrifuged MoS2 nanosheets. [16] It is likely that phase separation [31] (between MoS2 and EC) takes place during annealing and hence form the percolation-cluster-like microstructure. atmosphere retards the decomposition of EC so that some polymer residue is still visible in Figure 3e).…”

Section: Resultsmentioning

confidence: 99%

“…Recently, chemical vapor depositions have been developed to produce large-scale MoS2. [10,11] However, as for the emerging macro-electronics [12,13] which features cost efficiency, simple methods to fabricate solution-phase MoS2 nanosheets are favorable in a variety of applications, such as sensors, [14] photodetectors, [15,16] and supercapacitors. [17] Furthermore, patterning, [18] especially direct patterning, [17] of MoS2 at micrometer dimensions has great significance in extending their applications.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Inkjet Printing of MoS₂

Naiini

Vaziri

et al. 2014

Adv Funct Materials

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A simple and efficient inkjet printing technology is developed for molybdenum disulfide (MoS2), one of the most attractive two-dimensional layered materials. The technology effectively addresses critical issues associated with normal MoS2 liquid dispersions (such as incompatible rheology, low concentration, and solvent toxicity) and hence can directly and reliably write uniform patterns of high-quality (5-7 nm thick) MoS2 nanosheets at a resolution of tens of micrometers. The technology efficiency facilitates the integration of printed MoS2 patterns with other components (electrodes), and hence allows fabricating various functional devices, including thin film transistors, photoluminescence patterns, and photodetectors, in a simple, massive and cost-effective manner while retains the unique properties of MoS2. The technology has great potential in a variety of applications, such as photonics, optoelectronics, sensors and energy storage.

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Section: Resultssupporting

confidence: 85%

Section: Resultsmentioning

confidence: 59%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Inkjet Printing of MoS₂

Naiini

Vaziri

et al. 2014

Adv Funct Materials

218

186

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Dynamically Induced Large‐Scale, Selective, and Vertical Structure Growth of MoS₂ Nanosheets

et al. 2021

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Molybdenum disulfide (MoS2) has recently gained attention due to the exciting and various nanostructures created by different synthesis processes and their superior physical and chemical properties. Although large‐scale production with various nanostructures is achieved, only patterned film growth is demonstrated in specific locations. Traditional photolithography and etching processes are not suitable for patterning of 3D structures due to the huge height difference. The large‐scale patterned growth of MoS2 with different nanostructures is critical for sophisticated, customized electronic and optoelectronic devices. Herein, for the first time, the synthesis of large‐scale and patterned MoS2 nanosheets with vertically standing morphology (v‐MoS2 NS) using a chemical vapor deposition (CVD) method and a TiO2‐induced layer is reported. This method enables the preparation of patterned v‐MoS2 NS arrays with clean boundaries, uniform distributions, controllable locations, and various shapes, which can be used to fabricate various functional devices without etching. Next, it is demonstrated that the photodetectors can be fabricated directly using square‐patterned v‐MoS2 NS arrays. The method proposed could be extended to form other 2D materials with vertical NS structures and provides a lot of new chances to legitimately design functional devices and systems in the future.

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Pulsed Laser Deposition of Photoresponsive Two‐Dimensional GaSe Nanosheet Networks

Mahjouri‐Samani

Gresback

Tian

et al. 2014

Adv Funct Materials

113

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Synthesis of functional metal chalcogenide (GaSe) nanosheet networks by stoichiometric transfer of laser‐vaporized material from bulk GaSe targets is presented. Uniform coverage of interconnected, crystalline, and photoresponsive GaSe nanosheets in both in‐plane and out‐of‐plane orientations are achieved under different ablation conditions. The propagation of the laser‐vaporized material is characterized by in situ ICCD‐imaging. High (1 Torr) Ar background gas pressure is found to be crucial for the stoichiometric growth of GaSe nanosheet networks. Individual 1–3 layer GaSe triangular nanosheets of ≈200 nm domain size are formed within 30 laser pulses, coalescing to form nanosheet networks in as few as 100 laser pulses. The thickness of the deposited networks increases linearly with pulse number, adding layers in a two‐dimensional (2D) growth mode. GaSe nanosheet networks show p‐type semiconducting characteristics with mobilities reaching as high as 0.1 cm2V−1s−1. Spectrally‐resolved photoresponsivities and external quantum efficiencies range from 0.4 AW−1 and 100% at 700 nm, to 1.4 AW−1 and 600% at 240 nm, respectively. Pulsed laser deposition under these conditions appears to provide a versatile and rapid approach to stoichiometrically transfer and deposit functional networks of 2D nanosheets with digital thickness control and uniformity for a variety of applications.

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Photoconductivity of solution-processed MoS2 films

Cited by 104 publications

References 41 publications

Inkjet Printing of MoS₂

Inkjet Printing of MoS₂

Dynamically Induced Large‐Scale, Selective, and Vertical Structure Growth of MoS₂ Nanosheets

Pulsed Laser Deposition of Photoresponsive Two‐Dimensional GaSe Nanosheet Networks

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Photoconductivity of solution-processed MoS2 films

Cited by 104 publications

References 41 publications

Inkjet Printing of MoS2

Inkjet Printing of MoS2

Dynamically Induced Large‐Scale, Selective, and Vertical Structure Growth of MoS2 Nanosheets

Pulsed Laser Deposition of Photoresponsive Two‐Dimensional GaSe Nanosheet Networks

Contact Info

Product

Resources

About

Inkjet Printing of MoS₂

Inkjet Printing of MoS₂

Dynamically Induced Large‐Scale, Selective, and Vertical Structure Growth of MoS₂ Nanosheets