Photoconductivity of lightly boron doped a-Si:H

Jousse, D.; Chaussat, C.; Vaillant, F.; Bruyère, J.C.; Lesimple, F

doi:10.1016/0022-3093(85)90736-7

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Recombination Model1

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1986

1993

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Cited by 17 publications

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“…en +PCp (6) where el cl are emission and capture coefficients, i stands for electrons or holes and j ýor the involved DB state. Finally the charge conservation between the equilibrium and the under illumination situations gives…”

Section: Recombination Modelmentioning

confidence: 99%

The Photoconductivity Exponent For Recombination At Dangling Bonds In a-Si:H

Vaillant

Jousse

1986

MRS Proc.

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A theoretical model has been developed for recombination at dangling bonds which explains the y variations between 0.5 and 1 depending on the Fermi level position. The occupation probabilities of the T3+, T3 0 and T3states under illumination have been calculated using the statistics of correlated levels. The y exponent is derived through a parametric representation of the equations of detailed balance and charge conservation. A good agreement with experiment is obtained with a dangling bond density of 5x1015 cm-3 , a placing of the T3 0 level at 0.95 eV below Ec,an effective correlation energy of 0.4 eV and a charged to neutral capture cross section ratio of 50.

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Section: Recombination Modelmentioning

confidence: 99%