Photoconductivity in the Chalcohalide Semiconductor, SbSeI: a New Candidate for Hard Radiation Detection

Wibowo, Arief C.; Malliakas, Christos D.; Liu, Zhifu; Peters, John A.; Sebastian, Maria; Chung, Duck Young; Wessels, Bruce W.; Kanatzidis, Mercouri G.

doi:10.1021/ic401086r

Cited by 56 publications

(36 citation statements)

References 48 publications

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“…Notably, the high μτ product of carriers is the most important Figure‐of‐merit of X‐ray detectors, which represents an excellent response to X‐rays and a fast charge collection efficiency of X‐ray detection materials . Generally, the μτ product of a potential X‐ray detector material should be greater than 10 −4 cm 2 V −1 . The value of μτ can be calculated using the Hecht equation:

true I = \frac{I_{0} μ τ V}{L^{2}} ([] 1 - e x p (\frac{- L^{2}}{μ τ V}))

…”

Section: Resultsmentioning

confidence: 99%

A Photoconductive X‐ray Detector with a High Figure of Merit Based on an Open‐Framework Chalcogenide Semiconductor

Liang

Zhang

et al. 2020

Angew Chem Int Ed

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Awide range of tunability in the physical parameters of as emiconductor used for X-ray detection is desirable to achieve targeted performance optimization. However,i n adense-phase semiconductor,fine-tuning one parameter often leads to unwanted changes in other parameters.H erein, the intrinsic openness in an open-framework semiconductor has been confirmed, for the first time,tobeakey structural factor that weakens the mutual exclusivity of the adjustable physical parameters owingt oan on-linear control mechanism. The controllable doping of Si nazeolitic In-Se host results in an optimal balance between resistivity,b and gap,a nd carrier mobility,w hich finally results in an excellent X-rayd etector with ah igh figure of merit for the mobility-lifetime product (7.12 10 À4 cm 2 V À1); this value is superior to that of ac ommercial a-Se detector.T he current strategy of choosing openframework semiconductor materials opens an ew windowf or targeting high-performance X-ray detection.

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true I = \frac{I_{0} μ τ V}{L^{2}} ([] 1 - e x p (\frac{- L^{2}}{μ τ V}))

…”

Section: Resultsmentioning

confidence: 99%

A Photoconductive X‐ray Detector with a High Figure of Merit Based on an Open‐Framework Chalcogenide Semiconductor

Liang

Zhang

et al. 2020

Angew Chem Int Ed

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“…[ 14 ] SbSeI has attracted significant attention owing to its important optical and semiconducting properties, which have been applied in X‐ray and γ ‐ray detections as well as optoelectronics. [ 15 ] Based on relativistic quasi‐particle self‐consistent GW theory, Butler et al. reported that SbSeI exhibited a multivalley electronic structure, where several electron and hole basins occurred near the band extrema, which might cause nonconventional photophysical behaviors.…”

Section: Figurementioning

confidence: 99%

Efficient and Stable Antimony Selenoiodide Solar Cells

Nie

Risqi

et al. 2021

Advanced Science

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Although antimony selenoiodide (SbSeI) exhibits a suitable bandgap as well as interesting physicochemical properties, it has not been applied to solar cells. Here the fabrication of SbSeI solar cells is reported for the first time using multiple spin-coating cycles of SbI 3 solutions on Sb 2 Se 3 thin layer, which is formed by thermal decomposition after depositing a single-source precursor solution. The performance exhibits a short-circuit current density of 14.8 mA cm −2 , an open-circuit voltage of 473.0 mV, and a fill factor of 58.7%, yielding a power conversion efficiency (PCE) of 4.1% under standard air mass 1.5 global (AM 1.5 G, 100 mW cm −2 ). The cells retain ≈90.0% of the initial PCE even after illuminating under AM 1.5G (100 mW cm −2 ) for 2321 min. Here, a new approach is provided for combining selenide and iodide as anions, to fabricate highly efficient, highly stable, green, and low-cost solar cells.Small effective mass, large dielectric constant, high band dispersion level, and valence band maximum with antibonding states are desirable properties for highly efficient and defect-tolerant light harvesters. [1] Most of the aforementioned properties exist in materials containing metal cations with ns 2 valence electron configuration, [2] owing to their high bandwidth conduction band and high Born effective charge derived from large spin-orbit effects as well as their soft Polaris ability. Popular light harvesters including halides or chalcogenides of Pb 2+ , [3] Sn 2+ , [4] Ge 2+ , [5] Sb 3+ , [6] and Bi 3+[7] contain metal cations with the ns 2 valence electron configuration. However, most of them are affected by one or several issues, such as low efficiency, low stability, toxicity, and high cost. Hence, efficient, stable, green, and low-cost light-harvesters must be developed.As important material exhibiting the ns 2 electronic configuration, metal chalcohalides have received extensive attention owing to their interesting physical and chemical properties. [8] Because of the distinct bonding preferences of chalcogenide and halide atoms, to form stable sites in compounds, the competition among atoms might yield unique structures and properties. [9] Additionally, a wide bandgap range can be obtained in these materials because halide and chalcogenide coexist as anions; hence,

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“…[21][22][23][24][25][26] The last 5 years have witnessed the renaissance of these materials for photovoltaic applications beyond perovskites, [27][28][29][30][31][32][33][34] because (i) orienting crystal growth perpendicular to the substrate sustains excellent carrier transport along the chains, (ii) benign grain boundaries parallel to the chains are free of dangling bonds and hence cause little recombination loss, [35] and (iii) needle-like crystals aligned in the translational direction of the growth exhibit better photovoltaic response than their higher dimensional counterparts. [36] For applications in field-effect transistors, the Achilles' heel of bulk V-VI-VII semiconductors is smaller band gap, lighter effective mass, and much higher dielectric constant than 2D MoS 2 , [2,17,29,32] which seriously reduces their potential. Interestingly, we show for the first time that the bulk-to-1D transition is accompanied by an abrupt switch in band gap, effective mass, and dielectric constant, distinguishing 1D SbSeI as a promising channel material for next generation field-effect transistors.…”

Section: Introductionmentioning

confidence: 99%

1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

Peng

Zhang

et al. 2018

Advcd Theory and Sims

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Mechanical exfoliation of 2D materials has triggered an explosive interest in low dimensional material research. We extend this idea to 1D van der-Waals materials. Three 1D semiconductors (SbSeI, SbSI, and SbSBr) with high stability and novel electronic properties are discovered using first principles calculations. Both the dynamical and the thermal stability of these 1D materials are examined. We demonstrate that their nanowire thinner than 7Å can be easily obtained by mechanical exfoliation, hydrothermal method, or sonochemical method. The bulk-to-1D transition results in dramatic changes in band gap, effective mass, and static dielectric constant due to quantum confinement, making 1D SbSeI a highly promising channel material for transistors with gate length shorter than 1 nm. Under small uniaxial strain, these materials are transformed from indirect into direct band gap semiconductors, paving the way for optoelectronic devices and mechanical sensors. Moreover, the thermoelectric performance of these materials is significantly improved over their bulk counterparts. These highly desirable properties render SbSeI, SbSI, and SbSBr promising 1D materials for applications in future microelectronics, optoelectronics, mechanical sensors, and thermoelectrics.

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Photoconductivity in the Chalcohalide Semiconductor, SbSeI: a New Candidate for Hard Radiation Detection

Cited by 56 publications

References 48 publications

A Photoconductive X‐ray Detector with a High Figure of Merit Based on an Open‐Framework Chalcogenide Semiconductor

A Photoconductive X‐ray Detector with a High Figure of Merit Based on an Open‐Framework Chalcogenide Semiconductor

Efficient and Stable Antimony Selenoiodide Solar Cells

1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

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