Photoconductivity in AlxGa1—xN with Different Al Contents

Meister, D.; Topf, M.; Dirnstorfer, I.; Meyer, B.; Schwarz, R.; Heuken, M.

doi:10.1002/(sici)1521-3951(199911)216:1<749::aid-pssb749>3.0.co;2-t

Cited by 5 publications

(4 citation statements)

References 7 publications

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“…Hence, the data strongly suggest that various N-related defects present in GaAsN are responsible for reducing the mobility. However, the relative magnitude of mobility reduction in our material is much less compared to those reported by other authors [15][16][17][18][19][20][21] on molecular beam epitaxy (MBE) grown GaAsN layers. This may be due to the fact that materials grown LPE are usually more homogeneous in nature as compared to those grown by other techniques.…”

Section: Resultscontrasting

confidence: 73%

“…Many interesting properties of the materials and their nanostructures have been studied and attempts have been made to understand them using theoretical models. The study of the electrical transport properties of the materials forms an integral part of the work, in view of the observed fact that nitrogen plays an important role in significantly restricting the electron mobility in single layers [15][16][17] and in modulation-doped heterostructures [18,19]. The observed mobility drop has been suggested to be due to materials inhomogeneity [15,16] or N-related scattering centers [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

“…The study of the electrical transport properties of the materials forms an integral part of the work, in view of the observed fact that nitrogen plays an important role in significantly restricting the electron mobility in single layers [15][16][17] and in modulation-doped heterostructures [18,19]. The observed mobility drop has been suggested to be due to materials inhomogeneity [15,16] or N-related scattering centers [17][18][19]. Fay and O'Reilly presented a theoretical model to explain the mobility limited by nitrogen-related defects [20,21].…”

Section: Introductionmentioning

confidence: 99%

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Hall mobility and electron trap density in GaAsN grown by liquid phase epitaxy

Dhar

Mondal

Das

2007

Semicond. Sci. Technol.

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The Hall mobility of GaAsN layers grown by liquid phase epitaxy (LPE) is studied as a function of the nitrogen content in the material. It is observed that the parameter decreases with increasing nitrogen in the layer, in agreement with earlier theoretical predictions assuming scattering of electrons in nitrogen-related defects. It is also found that the decrease in mobility is accompanied by a corresponding increase in the density of electron traps, believed to originate from different configurations of nitrogen defect centers. The observation clearly suggests that nitrogen-related defects are responsible for lowering the mobility in LPE-grown GaAsN.

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Section: Resultscontrasting

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Hall mobility and electron trap density in GaAsN grown by liquid phase epitaxy

Dhar

Mondal

Das

2007

Semicond. Sci. Technol.

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“…The top Al 0.18 Ga 0.82 N (AlGaN) layer was 0.2 mm thick. Lateral Ohmic contacts, about 10 mm apart, were formed on the top of the AlGaN layer, with indium annealed at 380 C. The film was characterized by photoluminescence spectroscopy and Hall measurements as described earlier [3].…”

Section: Samples and Experimental Techniquesmentioning

confidence: 99%

Photoconductivity Studies of Al0.18Ga0.82N/GaN Single Heterostructure

Niehus¹,

Schwarz²,

Koynov³

et al. 2001

phys. stat. sol. (a)

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We present spectral photoconductivity (SPC) and transient photoconductivity (TPC) studies in a Al 0.18 Ga 0.82 N/GaN single heterostructure. We attribute near bandgap peaks in the SPC between 300 and 500 K to a deep trap-conduction band transition. The trap distribution lies approximately 100 meV above the valence band edge, for both GaN and AlGaN layers. In TPC studies we show that charge buildup after strong pulsed laser excitation can be detected by anomalous photocurrent decay.

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