Photoconductivity decay model in a-Si: H at low temperatures

Андреев, А. А.; Zherzdev, A.V.; Kosarev, A.; Koughia, K.; Shlimak, I.

doi:10.1016/0038-1098(84)90884-6

Cited by 14 publications

(3 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The activation energy of the MPC is 67meV. As the temperature increases the excess electrons start to hop in the tail of the conduction band, giving rise to photocurrent while holes are still immobile because they are trapped in deeper states immediately after thermalization [12] . At high temperatures III (180K<T≤240K), the MPC of a-HgCdTe thin films increases rapidly with increasing temperatures.…”

Section: Dependence Of Temperature Of the Modulated Photocurrentmentioning

confidence: 99%

The modulated photocurrent of amorphous HgCdTe thin films

et al. 2011

View full text Add to dashboard Cite

Amorphous HgCdTe thin films were deposited on quartz substrate by RF magnetron sputtering technique. The modulated photocurrent(MPC) of amorphous HgCdTe thin films has been investigated as a function of temperature T, the excitation light intensity F, and applied electric fields E B . The results indicated that the modulated photocurrent show an activated behavior in the range of 80K-300K. The activated energy ΔE ap of the modulated photocurrent was found to strongly depend on temperature, whereas it is nearly independent of the applied electric field. The exponent γ in the power law relationship (I p ∝F γ ) between excitation light intensity F and modulated photocurrent of amorphous HgCdTe thin films was obtained at different temperature. The γ depends strongly on the temperature T, but it is independence of applied electric fields E B . The values of exponent γ of amorphous HgCdTe thin films lie between 0.5 and 1.0. The results indicated a continuous distribution of localized states exists in amorphous HgCdTe thin films.

show abstract

Section: Dependence Of Temperature Of the Modulated Photocurrentmentioning

confidence: 99%

The modulated photocurrent of amorphous HgCdTe thin films

et al. 2011

View full text Add to dashboard Cite

show abstract

“…Photoconductivity decay from steady-state level has been modeled by Andreev et al [71] for α-Si:H, and can be explained in terms of tunnel recombination through randomly distributed states. Singh et al [72] showed that unlike in single-crystal silicon, the photoconductivity decay in polycrystalline Si is governed by the decrease in the mobility of the majority carrier mobility which is dominated by grain boundary scattering.…”

Section: Ppc In Si and Sicmentioning

confidence: 99%

Transient decay of photoinduced current in semiconductors and heterostructures

Scalvi

Bueno

2019

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Defects that exhibit some sort of lattice relaxation usually present an energy barrier for electron capture, and the possibility of developing the phenomenon known as persistent photoconductivity (PPC). In this effect, carriers induced in a metastable way remain in a conductive state forever, if the temperature is low enough to avoid the thermally excited retrapping of carriers by large lattice relaxation defects. Although this hypothesis is usually accepted to explain the origin of PPC, there are other principles such as the separation of excited carriers by random local-potential fluctuations. In this paper, we list many sorts of materials that exhibit the PPC effect and the attempts of several researchers to model the transient decay of PPC, seeking parameters in order to understand and model the electrical behavior of these materials. Besides, the PPC effect can be seen as the resulting electrical conduction obtained after removing the electromagnetic irradiation, and it is appealing for applications in a wide range of optoelectronic devices. A personal approach to modeling PPC decay is presented and applied to single crystalline semiconductors, nanocrystalline materials and heterostructures.

show abstract

“…Huge efforts were made on the growth of p-6P on alkali halide surfaces like NaCl(100), KBr(100), KCl(100), NaF(100), and LiF(100) [79][80][81][82]. It turns out that the most defined growth morphology is formed on KCl (100).…”

Section: Sexiphenyl Thin Films On Dielectric Surfacesmentioning

confidence: 99%

Surface induced crystallographic order in sexiphenyl thin films

Resel¹

2008

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

The crystallographic order in sexiphenyl thin films on dielectric surfaces (like thermally oxidized silicon, KCl(100), TiO2(110) mica (001)) and on metallic surfaces (like Au(111), Al(111)) are summarized. The combination of the surface science studies considering the first molecular layers on the substrate surfaces with crystallographic studies on sexiphenyl films reveals the influence of the first molecular layers on the thin-film structure. The interaction strength of the molecules with the substrate has a large influence on the preferred orientation of the crystallites relative to the substrate surface. In the case of metallic surfaces, the orientation of the molecules at the first monolayer determines the alignment of the crystallites in the thin film. In the case of dielectric surfaces, other types of preferred crystal orientations are observed, which is connected with the increasing importance of the intermolecular interaction strength in the first monolayers. Generally, it is observed that the bulk crystal structure is already present in thin films with a nominal thickness slightly larger than the monolayer thickness. The orientation and alignment of the initial crystal clusters at the surface determine the layer growth. The thin films show specific morphologies: depending on the orientation of the molecules relative to the substrate surface, either terraced islands or needle-like structures appear. The crystallite size parallel to the surface varies in a range from nanometres up to several tens of microns, depending on the type of substrate and the thin-film growth conditions. In the case of terraced islands, the crystallite size perpendicular to the surface is comparable with the nominal film thickness.

show abstract

Photoconductivity decay model in a-Si: H at low temperatures

Cited by 14 publications

References 12 publications

The modulated photocurrent of amorphous HgCdTe thin films

The modulated photocurrent of amorphous HgCdTe thin films

Transient decay of photoinduced current in semiconductors and heterostructures

Surface induced crystallographic order in sexiphenyl thin films

Contact Info

Product

Resources

About