Photoconductivity and trap distribution in CdIn2S4

Anedda, Alberto; Garbato, L.; Raga, F.; Serpi, Alessandro

doi:10.1002/pssa.2210500234

Cited by 45 publications

(11 citation statements)

References 27 publications

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“…In the case of PVK:TNF, figures 4 and 5 show the spectra obtained for samples with respectively 5% and 33% of TNF. These results, like those found by the four-gate technique also reveal the presence a continuous distribution of traps and may depict somewhat qualitatively the form of distribution of the density of states like it was found for amorphous silicon 9 and for the ternary crystal CdIn 2 Te 4 10 and also for other ternary compounds 11,12,13 . …”

Section: Case Of Pvk : Tnfsupporting

confidence: 50%

Optical and thermal studies of deep levels in the photothermoplastic PVK:TNF

Tapiero

2003

SPIE Proceedings

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Thin films of the organic complex PVK:TNF were studied for various rates of TNF (0 to 50 %) by means of photoinduced current transient spectroscopy (PICTS) and photoconductivity measurements. PICTS reveals the presence of a continuous trap distribution. Both the two models of the transport phenomenon by hopping (microscopic behavior) or by multiple trapping (more efficient for a quantitative explanation) explain the shape of the decay of photoconductivity and the observed results. The results for the trap distribution, obtained by two different methods of calculation, are coherent. Contrarily to amorphous semiconductors, the trap distribution is not here exponential. In a first approximation, the distribution is fairly uniform until 0.6-0.65 eV, followed by a sharp decrease until about 0.85 eV where the density of states practically vanishes. The microscopic model of hopping allow an interpretation of the distribution and gives a plausible explanation of the observed results.

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Section: Case Of Pvk : Tnfsupporting

confidence: 50%

Optical and thermal studies of deep levels in the photothermoplastic PVK:TNF

Tapiero

2003

SPIE Proceedings

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“…Recently, Anedda et al [8] have evidenced the presence in CdIn,$ of a high density (= 9 x lo1$ ~m -~) of electron trapping levels with a n exponential distribution in energy and the presence of an acceptor level a t = 0.25 eV from the top of the valence band. The origin of these levels has been attributed to the disorder in the lattice probably induced by the phase transition from the partial inverse spinel structure (low-temperature phase) to the disordered spinel structure (high-temperature phase) proposed by Czaja [21].…”

Section: Discussionmentioning

confidence: 99%

Photoluminescence of CdIn2S4 single crystals recombination process and localized levels

Grilli

Guzzi

Cappelletti

et al. 1980

Phys. Stat. Sol. (a)

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A detailed analysis of the excitation and recombination processes of the charge carriers in CdIn2S4 crystals is discussed. The luminescence spectra and the luminescence excitation spectra at temperatures ranging from liquid helium temperature to room temperature are presented; the effect of a secondary low energy radiation on luminescence is also discussed. Models are proposed for the excitation and recombination processes and a scheme of the levels localized in the gap of CdIn2S4. The two emission bands observed are attributed to an interimpurity recombination and to an electron transition between a donor level and the valence band, respectively; the presence of a non radiative recombination process is also proposed.

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“…It is easy to consider that in the vacancy tetrahedral semiconductors such as CdGa 2 Te 4 , the vacancies in the cation sublattice are the origin of the exponentially tailed donor states and Gaussian-like acceptor levels. 14 The photogenerated electrons in the conduction band can be efficiently transferred, via energy relaxation, to the exponential-donor states. The exponential-donor-related emission DA1 is, thus, the dominant PL mechanism in CdGa 2 Te 4 .…”

Section: ͑11͒mentioning

confidence: 99%

Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4

Ozaki

Muto

Nagata

et al. 2005

Journal of Applied Physics

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Optical-absorption and photoluminescence ͑PL͒ spectra have been measured on the defect-chalcopyrite-type semiconductor CdGa 2 Te 4 in the 0.9-1.5-eV photon-energy range at temperatures between 11 and 300 K. The temperature dependence of the direct-gap energy of CdGa 2 Te 4 has been determined from the optical-absorption spectra and fit using the Varshni equation and an analytical four-parameter expression developed for the explanation of the band-gap shrinkage effect in semiconductors. The PL spectra show an asymmetric emission band peaking at ϳ1.326 eV and a symmetric emission band at ϳ1.175 eV at T = 11 K, which are attributed to donor-acceptor-pair recombination between exponentially tailed or Gaussian-like donor states and acceptor levels, respectively. A multiple-exponential fit analysis of the PL emission suggests acceptor levels of 50 and 86 meV and a deep donor level of 190 meV, together with an unidentified shallow level of 9 meV. An energy-band scheme has been proposed for the explanation of PL emission observed in CdGa 2 Te 4 .

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Photoconductivity and trap distribution in CdIn2S4

Cited by 45 publications

References 27 publications

Optical and thermal studies of deep levels in the photothermoplastic PVK:TNF

Optical and thermal studies of deep levels in the photothermoplastic PVK:TNF

Photoluminescence of CdIn2S4 single crystals recombination process and localized levels

Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4

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