Photoconductivity and photoluminescence in chemically deposited films of (Cd–Zn)S:CdCl<sub>2</sub>, Ho

Bhushan, S.; Pillai, Sandhya

doi:10.1080/10420150701380051

Cited by 11 publications

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“…The role of CdCl 2 in re−crystallization and sensitization of CdS and CdSe is well known [12], so it was taken as a flux. Moreover, the ternary II-VI compounds like Cd x Zn 1-x S and Cd x Pb 1-x S show enhancement in PC and PL due to doping of lanthanides [13][14][15][16]. So,Ho was chosen as a dopant in the present study.…”

Section: Introductionmentioning

confidence: 99%

Photoconductivity and photoluminescence in chemically deposited films of CdSSe:CdCl2,Ho

Bhushan

Oudhia

2009

Opto-Electronics Review

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Results of the scanning electron microscopy (SEM), X-ray diffraction (XRD), optical absorption, photoconductivity (PC), and photoluminescence (PL) studies for the CdSSe:CdCl2,Ho films are presented in this paper. The SEM studies of different CdSSe films show a layered growth structure. A crystalline nature of the films is observed in the XRD studies. The regions with stacking fault were also observed in the X-ray diffractograms. The optical absorption spectra of these films show variations corresponding to the band gaps and the grain-sizes obtained under various deposition conditions and also with annealing. The effect of flux, impurities and annealing on the saturated photo to dark current ratio Ipc/Idc is observed in the PC rise and decay studies. The maximum value of Ipc/Idc ∼107 is obtained for the impurity doped annealed films. The PL emission spectra of CdSSe films show two emission peaks associated with the annihilation of free excitons and the transitions between shallow donor and deep acceptor states. In CdSSe:CdCl2,Ho films, two PL emission peaks are observed at 495 nm and 545 nm corresponding to the transitions 5S2→5I8 and 5F3→5I8, respectively, in Ho. The effect of pH on PL and grain size is also included in the present studies.

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Section: Introductionmentioning

confidence: 99%

Photoconductivity and photoluminescence in chemically deposited films of CdSSe:CdCl2,Ho

Bhushan

Oudhia

2009

Opto-Electronics Review

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“…Films were prepared at 60 ο C in water bath (WB) or at room temperature (RT). Other details are already given in earlier publication [6]. Film thicknesses were determined by optical interference method and were found to lie in the range of 0.4694 -0.4837 µm for films deposited in WB at 60°C and in the range of 0.6994 -0.7038 µm for RT deposition.…”

Section: Methodsmentioning

confidence: 99%

“…[2]. Bhushan and coworkers [3][4][5][6] used chemical deposition technique and reported quite high photo-sensitivity, PL, Photovoltaic effect and AC electro-luminescence in such films. The utility of chemical deposition method in metal chalcogenide thin films was reviewed by Mane and Lokhande [7].…”

Section: Introductionmentioning

confidence: 97%

“…Since (Cd-Zn)S has advantage over CdS in changing the band gap of the material which subsequently influences its electro-optical properties, this system has been used as base material in the present case. In their earlier work [3,4,6,[8][9][10]], Bhushan and co-workers used La, Pr, Nd, Sm, Gd, Dy and Ho as impurities. In the present case, Tb has been used as impurity due to its wide commercial use in trichromatic lighting technology and as a probe in biochemistry [11,12].…”

Section: Introductionmentioning

confidence: 99%

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Photoconductivity and photoluminescence in chemically deposited (Cd‐Zn)S:CdCl₂,Tb films

Bhushan¹,

Pillai

2008

Cryst. Res. Technol.

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Results of SEM, EDX and XRD studies, Optical Absorption spectra, Photoconductivity (PC) rise and decay, PC excitation spectra and Photoluminescence (PL) emission spectra are presented for (Cd-Zn)S:CdCl 2 , Tb films prepared by chemical deposition method on glass substrates either at room temperature (RT) or at 60 ο C in a water bath (WB). SEM studies show ball type structure which is related to layered growth. EDX measurements show excess of Cd in such preparations along with the presence of Tb. XRD studies show prominent diffraction lines of CdS and ZnS along with lines of CdCl 2 and impurity. The values of strain (ε), grain size (D), and dislocation density (δ) are evaluated from XRD studies and the nature of crystallinity of the films are discussed. Optical Absorption spectra also show the presence of Tb in the lattice corresponding to the transition 7 F 6 (4f) of Tb 3+ ions. From results of optical absorption spectra, the band gaps are determined, whose values are quite similar to those obtained from PC excitation spectra. Sufficiently high photo current (I pc ) to dark current (I dc ) ratios with a maximum value of the order of 10 6 are observed. This high photosensitisation is related to increase in mobility and lifetime of carriers due to photo excitation. PL emission spectra consist of peaks due to transitions in Tb levels.

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“…The thin film synthesis technique alters the properties of the films. There are various techniques for the synthesis of thin films, sputtering [8], thermal Evaporation [9,10],MBE [11], CBD [12,13], spray pyrolysis [14] electron beam deposition [15].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Nanostructured Thin Films of (CdS)0.6 Se0.4 for Solar Cell

Kale¹,

Talele²,

Bhavsar³

2014

IOSRJAP

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Photoconductivity and photoluminescence in chemically deposited films of (Cd–Zn)S:CdCl₂, Ho

Cited by 11 publications

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Photoconductivity and photoluminescence in chemically deposited films of CdSSe:CdCl2,Ho

Photoconductivity and photoluminescence in chemically deposited films of CdSSe:CdCl2,Ho

Photoconductivity and photoluminescence in chemically deposited (Cd‐Zn)S:CdCl₂,Tb films

Synthesis and Characterization of Nanostructured Thin Films of (CdS)0.6 Se0.4 for Solar Cell

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Photoconductivity and photoluminescence in chemically deposited films of (Cd–Zn)S:CdCl2, Ho

Cited by 11 publications

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Photoconductivity and photoluminescence in chemically deposited films of CdSSe:CdCl2,Ho

Photoconductivity and photoluminescence in chemically deposited films of CdSSe:CdCl2,Ho

Photoconductivity and photoluminescence in chemically deposited (Cd‐Zn)S:CdCl2,Tb films

Synthesis and Characterization of Nanostructured Thin Films of (CdS)0.6 Se0.4 for Solar Cell

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Photoconductivity and photoluminescence in chemically deposited films of (Cd–Zn)S:CdCl₂, Ho

Photoconductivity and photoluminescence in chemically deposited (Cd‐Zn)S:CdCl₂,Tb films