Photoconductivity and characterization of nitrogen incorporated hydrogenated amorphous carbon thin films

Dwivedi, Neeraj; Kumar, Sushil; Carey, J. D.; Malik, Hitendra K.; Govind,

doi:10.1063/1.4768286

Cited by 35 publications

(24 citation statements)

References 26 publications

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“…Thus, the XPS analysis of the C-V2NO@800 °C was performed to determine the active species introduced into the material. Figure S3 (supporting information) shows the C, V, O and N peaks deconvoluted in high resolution into C1s V2p, O1s and N1s which confirms the configurations of carbon, nitrogen, oxygen and all the different vanadium ions (V 2+ , V 3+ , V 4+ and V 5+ ) [10,25,[46][47][48][49][50][51][52][53][54][55][56].…”

Section: Resultsmentioning

confidence: 61%

Nitridation Temperature Effect on Carbon Vanadium Oxynitrides for a Symmetric Supercapacitor

et al. 2019

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In this work, porous carbon-vanadium oxynitride (C-V 2 NO) nanostructures were obtained at different nitridation temperature of 700, 800 and 900 • C using a thermal decomposition process. The X-ray diffraction (XRD) pattern of all the nanomaterials showed a C-V 2 NO single-phase cubic structure. The C-V 2 NO obtained at 700 • C had a low surface area (91.6 m 2 g −1 ), a moderate degree of graphitization, and a broader pore size distribution. The C-V 2 NO obtained at 800 • C displayed an interconnected network with higher surface area (121.6 m 2 g −1 ) and a narrower pore size distribution. In contrast, at 900 • C, the C-V 2 NO displayed a disintegrated network and a decrease in the surface area (113 m 2 g −1 ). All the synthesized C-V 2 NO yielded mesoporous oxynitride nanostructures which were evaluated in three-electrode configuration using 6 M KOH aqueous electrolyte as a function of temperature. The C-V 2 NO@800 • C electrode gave the highest electrochemical performance as compared to its counterparts due to its superior properties. These results indicate that the nitridation temperature not only influences the morphology, structure and surface area of the C-V 2 NO but also their electrochemical performance. Additionally, a symmetric device fabricated from the C-V 2 NO@800 • C displayed specific energy and power of 38 W h kg −1 and 764 W kg −1 , respectively, at 1 A g −1 in a wide operating voltage of 1.8 V. In terms of stability, it achieved 84.7% as capacity retention up to 10,000 cycles which was confirmed through the floating/aging measurement for up to 100 h at 10 A g −1 . This symmetric capacitor is promising for practical applications due to the rapid and easy preparation of the carbon-vanadium oxynitride materials.

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Section: Resultsmentioning

confidence: 61%

Nitridation Temperature Effect on Carbon Vanadium Oxynitrides for a Symmetric Supercapacitor

et al. 2019

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“…These films possess both sp 3 and sp 2 bonded carbon and exhibit tunable mechanical, electrical and optical properties. [4][5][6][7][8][9][10][11][12][13][14][15] Here, we focus on the FE characteristics of DLC films and suggest ways to reduce the electric field required to initiate emission by adjusting the sp 2 carbon phase and surface morphology.…”

Section: Introductionmentioning

confidence: 99%

Influence of Silver Incorporation on the Structural and Electrical Properties of Diamond-Like Carbon Thin Films

Dwivedi

Kumar²,

Carey

et al. 2013

ACS Appl. Mater. Interfaces

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A simple approach is proposed for obtaining low threshold field electron emission from large area diamond-like carbon (DLC) thin films by sandwiching either Ag dots or a thin Ag layer between DLC and nitrogen containing DLC films. The introduction of silver and nitrogen is found to reduce the threshold field for emission to under 6 V/m representing a near 46% reduction when compared with unmodified films. The reduction in the threshold field is correlated with the morphology, microstructure, interface and bonding environment of the films.We find modifications to the structure of the DLC films through promotion of metal-induced sp 2 bonding and the introduction of surface asperities, which significantly reduce the value of the threshold field. This can lead to the next generation large area simple and inexpensive field emission devices.

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“…Under this condition, the local bonding will then reform around that atom according to this new density [9], where the feature of the film deposition is characterized by internal growth. Based on the sub-plantation model [7,10], the fraction of carbonaceous species trapped in subsurface position is increased with increasing substrate bias, therefore the thickness of a-C:B film is also increased. At 0 V bias, less species can reach the film surface due to less optimized energy.…”

Section: Resultsmentioning

confidence: 99%

Boron-doped amorphous carbon film grown by bias assisted pyrolysis chemical vapor deposition

Annuar

Rouhi

Rusop

2015

IEICE Electron. Express

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Boron-doped amorphous carbon (a-C:B) films were successfully synthesized via a bias-assisted pyrolysis-chemical vapor deposition (CVD). The effect of substrate bias on the thickness, surface morphology, electrical properties of a-C:B film were investigated. The AFM measurements and conductivity result show the surface roughness and resistivity of a-C:B films decreases with increasing substrate bias from 0 to −20 V. The fabricated films were evaluated for use in photovoltaic solar cells. The fabricated solar cell with the configuration of Au/p-C:B/n-Si/Au achieved conversion efficiency (η) of 1.431% at applied bias voltage of −20 V. This result showed the successful interstitial doping of boron in the amorphous carbon films deposited by this method.

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Photoconductivity and characterization of nitrogen incorporated hydrogenated amorphous carbon thin films

Cited by 35 publications

References 26 publications

Nitridation Temperature Effect on Carbon Vanadium Oxynitrides for a Symmetric Supercapacitor

Nitridation Temperature Effect on Carbon Vanadium Oxynitrides for a Symmetric Supercapacitor

Influence of Silver Incorporation on the Structural and Electrical Properties of Diamond-Like Carbon Thin Films

Boron-doped amorphous carbon film grown by bias assisted pyrolysis chemical vapor deposition

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