Photoconductive semiconductor switch (pcss) recovery

Zutavern, F.J.; Loubriel, G.M.; McKenzie, Bonnie Beth; O'Malley, W.M.; Hamil, R.A.; Schanwald, L.P.; Hjalmarson, Harold P.

doi:10.1109/ppc.1989.767511

Cited by 26 publications

(8 citation statements)

References 4 publications

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“…However, since it is feasible to reduce the field across the switch temporarily after switching, it may be possible for the switch to still recover rapidly and withstand high fields after its open-state resistance has returned [15]. The question is, how long must it remain at low fields to recover?…”

Section: Fast Recovery From Lock-onmentioning

confidence: 99%

Photoconductive semiconductor switch experiments for pulsed power applications

Zutavern

Loubriel

O'Malley

et al. 1990

IEEE Trans. Electron Devices

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103

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Photoconductive semiconductor switches (PCSS's) are being developed at SNL for pulsed power applications that cannot be built with traditional high-power switching technology. For a variety of projects, we have constructed silicon or GaAs switches which have switched (not all at one time) over 120 kV and 4 kA, demonstrated less than 270-ps rise times, contributed a resistance of less than 1 R and a stray inductance of less than 10 nH, produced a burst of 20 bipolar pulses at 20 MHz, been triggered in a high-gain mode (called lock-on) with less than 100 FJ using laser diode arrays operated at 10 Hz, and demonstrated recovery from lock-on in 35 ns. This paper describes the highlights of this research effort and our approach in applying photoconductivity to pulse power switching.

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Section: Fast Recovery From Lock-onmentioning

confidence: 99%

Photoconductive semiconductor switch experiments for pulsed power applications

Zutavern

Loubriel

O'Malley

et al. 1990

IEEE Trans. Electron Devices

Self Cite

103

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“…it persists for as long as the external circuit can provide current, maintaining the lock-on field across the switch [22].…”

Section: Motivationmentioning

confidence: 99%

Investigation of Surface Breakdown on Semiconductor Devices Using Optical Probing Techniques.

Donaldson¹

1990

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“…The current through the switch behaves the same way. The voltage and current remain relatively constant until the energy has been dumped from the charging system [10]. Lock-on effect can only be observed when both electrical and optical thresholds are attained.…”

Section: Introductionmentioning

confidence: 99%

High-Power Semi-Insulating GaAs Photoconductive Semiconductor Switch Employing Extrinsic Photoconductivity

Yuan

Xie

Liu

et al. 2009

IEEE Trans. Plasma Sci.

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A photoconductive semiconductor switch (PCSS) with a gap of 0.018 m was fabricated from semi-insulating GaAs. Illuminated by a laser pulse with varying optical energies at a wavelength of 1064 nm, the photoconductivity tests of the PCSS were performed at different bias voltages. In nonlinear mode, by comparing the charge initially stored in the capacitors and the charge through the switch, it is found that the end of lock-on phase is not always due to the fact that the energy has been dumped from the charging system. The threshold of incident optical energy and the ON-state resistance are analyzed and calculated. The PCSS failed at a bias voltage of 32 kV because of surface flashover.Index Terms-Gallium arsenide (GaAs), high-power microwaves, photoconductive semiconductor switches (PCSSs).

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Photoconductive semiconductor switch (pcss) recovery

Cited by 26 publications

References 4 publications

Photoconductive semiconductor switch experiments for pulsed power applications

Photoconductive semiconductor switch experiments for pulsed power applications

Investigation of Surface Breakdown on Semiconductor Devices Using Optical Probing Techniques.

High-Power Semi-Insulating GaAs Photoconductive Semiconductor Switch Employing Extrinsic Photoconductivity

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